The present invention provides a composition which is suppressed in decrease of the etching rate over time. A composition which contains; at least one of a quaternary alkyl ammonium fluoride and a hydrate of a quaternary alkyl ammonium fluoride; (A) an N-substituted amide compound that has no active hydrogen on a nitrogen atom and (B) a dipropylene glycol dimethyl ether, which serve as aprotic solvents; and an antioxidant.

An environmentally friendly photoresist removing composition includes 20 parts by weight to 80 parts by weight of a carbonate compound, 0.5 parts by weight to 15 parts by weight of a hydramine compound, an amide compound, or an ammonium compound, 1 part by weight to 20 parts by weight of an organic base compound, and 2 parts by weight to 70 parts by weight of an alcohol ether compound.

Disclosed herein are adhesive remover compositions, methods of making such compositions, and methods of using such compositions. In one aspect, an adhesive remover composition comprises cyclopentasiloxane, dimethicone, and a blend or mixture of dimethicone and dimethiconol.

Described herein is a method of using a composition including 0.1 to 3% by weight ammonia and a C.sub.1 to C.sub.4 alkanol. The method includes using the composition for anti-pattern collapse treatment of a substrate including patterned material layers having line-space dimensions with a line width of 50 nm or less, aspect ratios of greater than or equal to 4, or a combination thereof.

[Problem] To obtain a substrate cleaning solution capable of cleaning a substrate and removing particles. [Means for Solution] To provide a substrate cleaning solution comprising an insoluble or hardly soluble solute (A), a soluble solute (B), and a solvent (C), wherein the solvent (C) comprises water (C-1); and the content of the soluble solute (B) is 0.1 to 500 mass % based on water (C-1).

A cleaning agent composition for use in removing an adhesive residue, characterized in that the composition contains a quaternary ammonium salt and a composition solvent including a first organic solvent and a second organic solvent; the first organic solvent is an amide derivative represented by formula (Z) (wherein R.sup.0 represents an ethyl group, a propyl group, or an isopropyl group; and each of R.sup.A and R.sup.B represents a C1 to C4 alkyl group); the second organic solvent is a non-amide organic solvent other than the amide derivative; and the composition has a water content less than 4.0 mass %.

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A substrate processing apparatus includes a substrate processing part that supplies a processing liquid from a processing liquid supply part to a mounted substrate to execute liquid processing, a liquid drainage part that has a recovery channel connected to a storage part that stores the processing liquid and drains the processing liquid used for the liquid processing, and a control unit executes a processing recipe for the liquid processing and a cleaning recipe for cleaning the substrate processing part and the liquid drainage part. The control unit executes a cleaning operation for supplying a cleaning liquid from a cleaning liquid supply part to clean the substrate processing part and the liquid drainage part and subsequently executes a return operation for supplying the processing liquid from the processing liquid supply part to replace the cleaning liquid attached to the substrate processing part and the liquid drainage part with the processing liquid.

An azeotropic cleaning solvent composition has from about 96 to about 98 weight percent 1,1,1,3,3,3-hexafluoro-2-methoxypropane (“HFMOP”) and from about 2 to about 4 weight percent acetone, for example, about 97 weight percent HFMOP and about 3 weight percent acetone. Another composition of the invention has a weight ratio of HFMOP to acetone of about 24 to about 99, for example, about 24 to 49. Conventional additives such as surfactants, lubricants and co-solvents may be present in an amount not to exceed about 10 weight percent of the composition. A method of the invention comprises contacting an article of manufacture with the solvent composition in order to clean the article of manufacture and then removing the solvent composition from the article of manufacture.

The rinsing composition according to embodiments of the present invention includes a non-ionic fluorinated surfactant and a basic additive containing tetraalkylammonium hydroxide in a specific range of content, so as to reduce the number of defects possibly occurring in a pattern after development of photoresist in a fine patterning process, while preventing pattern collapse.

Provided are formulations that offer a high cleaning effect on inorganic particles, organic residues, chemical residues, reaction products on the surface due to interaction of the wafer surface with the Chemical Mechanical Planarization (CMP) slurry and elevated levels of undesirable metals on the surface left on the semiconductor devices after the CMP. The post-CMP cleaning formulations comprise one or more organic acid, one or more polymer and a fluoride compound with pH<7 and optionally a surfactant with two sulfonic acid groups.