The present application provides compositions comprising 1,2-dichloro-1,2-difluoroethylene (i.e., CFO-1112) and, optionally, an additional component. The present application further provides use of the compositions provided herein in cleaning, solvent, carrier fluid, and deposition applications.

Provided are a cleaning agent and a preparation method and the use thereof. The cleaning agent is prepared from the following raw materials comprising the following mass fraction of components: 0.5%-20% of an oxidant containing iodine, 0.5%-20% of an etchant containing boron, 1%-50% of a pyrrolidinone solvent, 1%-20% of a corrosion inhibitor, 0.01%-5% of a metal ion-free surfactant, and water, with the sum of the mass fraction of each component being 100%, the pH of the cleaning agent is 7.5-13.5, and the corrosion inhibitor is one or more of a benzotriazole corrosion inhibitor, a hydrazone corrosion inhibitor, a carbazone corrosion inhibitor and a thiocarbohydrazone corrosion inhibitor. The cleaning agent can efficiently remove nitrides from hard mask residues with little effects on metals and low-κ dielectric materials, and has a good selectivity.

An object of the present invention is to provide a treatment liquid for a semiconductor device, which is excellent in removal performance for residues present on a substrate, and to provide a substrate washing method using the treatment liquid.

The treatment liquid of the present invention is a treatment liquid for a semiconductor device, which includes water, a basic compound, hexylene glycol, and a compound A that is at least one kind selected from the group consisting of isobutene, (E)-2-methyl-1,3-pentadiene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, 4-methyl-3-penten-2-ol, and 2,4,4,6-tetramethyl-1,3-dioxane.

A cleaning composition is provided herein. The cleaning composition includes a plurality of metal particles and a base fluid. The plurality of metal particles have an average size in a range of from about 1 nanometer (nm) to about 10,000 micrometers (μm), and are dispersed in the base fluid. The cleaning composition is configured to generate an exothermic reaction when contacted with one or more components on a surface and water to facilitate removal of the one or more components from the surface. Methods of making and utilizing the cleaning composition are also provided.

In a substrate processing method, a rinse process using a rinse solution is performed on a development-processed photoresist pattern on a substrate. A substitution process including a first substitution step using a mixed solution of a non-polar organic solvent and a surfactant and a second substitution step using the non-polar organic solvent is performed on the substrate. The substitution process is performed a plurality of times until the rinse solution remaining on the substrate is less than a predetermined value. A supercritical fluid drying process is performed on the substrate to dry the non-polar organic solvent remaining on the substrate.

The present invention relates to a photoresist stripper composition for manufacturing a display, and more particularly, to an integrated photoresist stripper composition which can be used in every process for manufacturing a display. More specifically, the photoresist stripper composition for manufacturing a display according to the present invention can be applied to all of transition metals and oxide semiconductor wirings, and has an excellent ability to remove modified photoresist after a hard bake process, and implant process, and a dry etch process have been performed. In particular, the photoresist stripper composition for manufacturing a display according to the present invention exhibits a corrosion inhibitory effect that has been further specialized for copper (Cu) wiring pattern edge portions which are susceptible to corrosion following dry-etching.

There is provided a cleaning liquid excellent in cleaning performance and corrosion prevention performance in application as a cleaning liquid for semiconductor substrates that contain cobalt-containing matter and that have undergone a chemical mechanical polishing process. There is also provided a method of cleaning a semiconductor substrate having undergone a chemical mechanical polishing process. The cleaning liquid is for a semiconductor substrate having undergone a chemical mechanical polishing process, and contains an amine compound Y0 that is at least one selected from the group consisting of: a compound Y1 represented by a general formula (Y1); and a compound Y0 having a 1,4-butanediamine skeleton. The cleaning liquid has a pH of 8.0 to 11.0.

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A composition for cleaning a substrate is provided. According to an embodiment, the composition for cleaning the substrate includes an organic solvent having a Hansen solubility parameter of 5 or more to 12 or less for polystyrene latex to the substrate.

A method and cleaning composition for microelectronic devices or semiconductor substrates including at least one N alkanolamine; at least one hydroxylamine or derivatives of hydroxylamine or mixtures thereof; at least one polyfunctional organic acid with at least two carboxylic acid groups and water. The cleaning compositions can further include at least one corrosion inhibitor.

Provided is a chemical-mechanical polishing composition comprising an abrasive, a basic component, at least one compound selected from the group consisting of a quaternary polyammonium salt, a quaternary ammonium salt having 6 or more carbon atoms, and an alkylated polymer having an amide structure, and an aqueous carrier; a rinse composition comprising the at least one compound and an aqueous carrier, as well as a method of chemically-mechanically polishing a substrate, and a method of rinsing a substrate, in which the respective compositions are used.