The present invention provides a cleaning composition for post CMP cleaning and method for post CMP cleaning microelectronic device. The cleaning composition according to the invention includes at least one chelating agent, at least one organic solvent, at least one polycarboxylic acid, at least one basic pH adjustor, at least one metal anticorrosive agent, and water. The TMAH-free cleaning composition according to the invention provides improved cleaning efficiency and electrochemical compatibility with both cobalt and copper materials.

Polishing compositions are disclosed for simultaneously removing particles from a surface that has been polished using a CMP slurry comprising a polishing rate accelerator and removing a pad stain from a polishing pad that has been contacted with a CMP slurry comprising a polishing rate accelerator.

Cleaning compositions for post-CMP cleaning of semiconductor surfaces, comprise one or more reducing agents, a particle removal agent, a surfactant, and a base. When one or more reducing agents yields a standard reduction potential of less than 1.224 V, the cleaning composition of the present disclosure is able to remove a MnO.sub.2 pad stain from a polishing pad and reduce defects on a polished surface (by removing particles).

This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; and 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

An object of the invention is to provide a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in cleaning performance and corrosion prevention performance with respect to copper-containing and cobalt-containing metal films. Another object of the invention is to provide a method of cleaning semiconductor substrates having undergone CMP. A cleaning liquid of the invention is for semiconductor substrates having undergone CMP and includes: a component A that is an amino acid having one carboxyl group; a component B that is at least one selected from the group consisting of an aminopolycarboxylic acid and a polyphosphonic acid; and a component C that is an aliphatic amine (provided that the component A, the aminopolycarboxilic acid and a quaternary ammonium compound are excluded). The mass ratio of the component B content to the component A content is 0.2 to 10, and the mass ratio of the component C content to the sum of the component A content and the component B content is 5 to 100.

The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (wherein each of L.sup.1 and L.sup.2 represents a C2 to C4 alkyl group, and L.sup.3 represents O or S) in an amount of 80 mass % or more.

L.sup.1-L.sup.3-L.sup.2(L)

The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition which contains a solvent but no salt, the solvent containing a C8 to C10 linear-chain, saturated, aliphatic hydrocarbon compound. As the C8 to C10 linear-chain, saturated, aliphatic hydrocarbon compound, a linear-chain hydrocarbon compound is used.

The sublimable film formation composition of the present invention includes a sublimable substance and a solvent in which a saturation solubility of the sublimable substance is more than 10% by mass.

The invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (in the formula, L represents a substituent to the benzene ring, and each of a plurality of Ls represents a C1 to C4 alkyl group; and k represents the number of Ls and is an integer of 0 to 5) in an amount of 80 mass % or more.

##STR00001##

There is provided a means capable of sufficiently removing organic residues present on the surface of an object to be polished after polishing containing silicon nitride or polysilicon. A surface treatment composition containing: a polymer having a constituent unit represented by Formula (1) in [Chem. 1] below; at least one of an anionic surfactant and a nonionic surfactant; and water, in which the surface treatment composition is used for treating the surface of an object to be polished after polishing,

##STR00001## in which, in Formula (1) above, R.sup.1 is a hydrocarbon group having the number of carbon atoms of 1 to 5, and R.sup.2 is a hydrogen atom or a hydrocarbon group having the number of carbon atoms of 1 to 3.

A method for inhibiting a flash point of trans-1,2-dichloroethylene (T-1,2-DCE) and a use of T-1,2-DCE are provided. The T-1,2-DCE has an excellent cleaning effect and is environmental friendly but cannot be used alone because of huge safety hazard caused by its low flash point. 1-chloro-3,3,3-trifluoropropene (HCFO-1233zd) is used to inhibit the flash point of T-1,2-DCE. However, because the actual boiling points of these two substances are quite different, the two substances are easily separated at a slightly-high ambient temperature. Because a boiling point of HCFO-1233zd is extremely low, HCFO-1233zd will escape rapidly, resulting in the loss of inhibition on the flash point. In the present disclosure, T-1,2-DCE and 1-chloro-2,3,3-trifluoropropene are mixed to prepare a mixed solution, and the mixed solution can effectively maintain the inhibition on the flash point of T-1,2-DCE in various ambient temperatures, such that the T-1,2-DCE can be heated to generate a steam for cleaning.