A semiconductor device comprising a passive magnetoelectric transducer structure adapted for generating a charge via mechanical stress caused by a magnetic field. The first transducer structure has a first terminal electrically connectable to the control terminal of an electrical switch, and having a second terminal electrically connectable to the first terminal of the electrical switch for providing a control signal for opening/closing the switch. The switch may be a FET. A passive magnetic switch using a magnetoelectric transducer structure. Use of a passive magnetoelectric transducer structure for opening or closing a switch without the need for an external power supply.

A flexible tactile actuator includes a tactile transmitter configured to be flexible and including magnetic particles capable of being polarized in response to an external magnetic field and a matrix layer including the magnetic particles, a magnetic field generator disposed below the tactile transmitter and configured to generate a magnetic field in the tactile transmitter, and an elastic member provided in a shape of a film, having at least a portion in surface contact with the magnetic field generator, and attached to be in surface contact with one of a top surface and a bottom surface of the tactile transmitter.

The present application relates to copper-doped double perovskites, for example, copper-doped double perovskites of the formula (I) and to uses thereof, for example as low-bandgap materials such as a semiconducting material in a device. The present application also relates to methods of tuning the bandgap of a Cs.sub.2SbAgZ.sub.6 double perovskite (for example, wherein Z is Cl) comprising doping the double perovskite with copper.
Cs.sub.2Sb.sub.1-aAg.sub.1-bCu.sub.2xZ.sub.6  (I)

A metal stack for templating the growth of AlN and ScAlN films is disclosed. The metal stack comprises one, two, or three layers of metal, each of which is compatible with CMOS post-processing. The metal stack provides a template that promotes the growth of highly textured c-axis {002} AlN and ScAlN films. The metal stacks include one or more metal layers with each metal layer having either a hexagonal {002} orientation or a cubic {111} orientation. If the metal stack includes two or more metal layers, the layers can alternate between hexagonal {002} and cubic {111} orientations. The use of ScAlN results in a higher piezoelectric constant compared to that of AlN for ScAlN alloys up to approximately 44% Sc. The disclosed metal stacks resulted in ScAlN films having XRD FWHM values of less than approximately 1.1° while significantly reducing the formation of secondary grains in the ScAlN films.

A plurality of conductive via connections are fabricated on a substrate located at positions where MTJ devices are to be fabricated, wherein a width of each of the conductive via connections is smaller than or equivalent to a width of the MTJ devices. The conductive via connections are surrounded with a dielectric layer having a height sufficient to ensure that at the end of a main MTJ etch, an etch front remains in the dielectric layer surrounding the conductive via connections. Thereafter, a MTJ film stack is deposited on the plurality of conductive via connections surrounded by the dielectric layer. The MTJ film stack is etched using an ion beam etch process (IBE), etching through the MTJ film stack and into the dielectric layer surrounding the conductive via connections to form the MTJ devices wherein by etching into the dielectric layer, re-deposition on sidewalls of the MTJ devices is insulating.

The present invention provides a magnetostrictive member with high performance, high reliability and high versatility. The magnetostrictive member is used in the vibration power generation as a power source for extracting electric energy from various vibrations. The member made of the single crystal is manufactured cheaper than the conventional manufacturing method. The magnetostrictive member is formed by cutting a single crystal of Fe—Ga alloy by using electric discharge machining in a state that <100>orientation of the crystal of the Fe—Ga alloy is aligned in a direction in which magnetostriction of the magnetostrictive member is required.

Described is an apparatus which comprises: a magnetic tunneling junction (MTJ) having a free magnetic layer; a piezoelectric layer; and a conducting strain transfer layer coupled to the free magnetic layer and the piezoelectric layer. Described is a method, which comprises: exciting a piezoelectric layer with a voltage driven capacitive stimulus; and writing to a MTJ coupled to the piezoelectric layer via a strain assist layer. Described is also an apparatus which comprises: a transistor; a conductive strain transfer layer coupled to the transistor; and a MTJ device having a free magnetic layer coupled to the conductive strain transfer layer.

Exemplary practice of the present invention provides a magnetostrictive actuator characterized by linear force output and uniform magnetic biasing. A center bias magnet drives flux through series magnetostrictive bars in opposite directions while surrounding drive coils apply flux in the same direction through the bars. The net response is substantially linear with respect to the drive coil current. A second parallel set of magnetostrictive bars completes the flux path and adds to the actuator output force. Flux leakage between the parallel bars is compensated by a ferromagnetic shunt or by a tapered magnet providing uniform flux density down the length of the magnetostrictive bars. The closed flux path allows magnetic shielding of the entire actuator, if desired.

Textured ceramic compositions having improved piezoelectric characteristics as compared with their random counterparts are provided. Methods of making the compositions and devices using them are also included. More particularly, compositions comprising textured ceramic Na.sub.0.5Bi.sub.0.5TiO.sub.3—BaTiO.sub.3(NBT-BT) materials synthesized from high aspect ratio NBT seeds exhibit improved characteristics, including an increased longitudinal piezoelectric constant (d.sub.33) and magnetoelectric coupling coefficient over randomly oriented NBT-BT. Additionally provided are compositions comprising of nanostructured Na.sub.0.5B.sub.0.5TiO.sub.3—BaTiO.sub.3 ferroelectric whiskers having a high aspect ratio. Nanostructured whiskers can be used to improve the piezoelectric properties of the bulk ceramics. The inventive materials are useful in microelectronic devices, with some finding particular application as multilayer actuators and transducers.

The disclosure describes new apparatus, systems and methods utilizing magnetoelectric neural stimulators with tunable amplitude and waveform. Specific embodiments of the present disclosure include a magnetoelectric film, a magnetic field generator and an electrical circuit coupled to the magnetoelectric film, in particular embodiments, the electrical circuit comprises components configured modify an electrical output signal produced by the magnetoelectric film. In certain embodiments, the electrical circuit is configured to modify the electric signal to charge a charge storage element, to transmit data to an implantable wireless neural stimulator, and to provide a stimulation output to electrodes.