A positive-displacement pump device has at least one shape-memory unit including at least one magnetic shape-memory element, which is configured to convey at least one medium along at least one transport direction, wherein the positive-displacement pump device includes at least one deformation unit, which is configured, for the purpose of providing a transport volume, to deform the magnetic shape-memory element, at least in an idle state in which the positive-displacement pump device is free of a current and/or voltage supply, by a pressure force and/or traction force acting in the transport direction such that the magnetic shape-memory element includes at least one first partial region and at least one second partial region which differ from one another at least by their magnetic orientations.

A magnetostriction-type vibration powered generator including a power generating section and a frame joined to the power generating section. The power generating section includes a diaphragm formed of non-magnetic material and disposed at a first end of the power generating section, a magnetostriction element disposed at a second end of the power generating section; and a coil wrapped around the magnetostriction element along the longitudinal direction. The frame includes a frame body formed of a magnetic material and joined to a second end of the power generating section. A magnet is provided on the frame body so as to face the magnetostriction element of the power generating section.

A heterostructure includes a substrate exhibiting a piezoelectric effect, and a magnetostrictive film supported by the substrate. The magnetostrictive film includes an iron-gallium alloy. The iron-gallium alloy has a gallium composition greater than 20%.

An energy converter is formed by bonding a solid soft magnetic material and a solid magnetostrictive material. A vibration power generator is configured to generate power by means of the inverse magnetostriction effect of the magnetostrictive material produced by the vibration of a vibration unit configured using the energy converter. A force sensor device includes a force detection unit that detects magnetization change resulting from the inverse magnetostriction effect of the magnetostrictive material produced when a sensor unit configured using the energy converter deforms, and determines force acting on the sensor unit on the basis of the detected magnetization change. An actuator is configured to vibrate the vibration unit configured using the energy converter by means of the magnetostriction effect of the magnetostrictive material.

An apparatus is provided which comprises: a ferromagnetic (FM) region with magnetostrictive (MS) property; a piezo-electric (PZe) region adjacent to the FM region; and a magnetoelectric region adjacent to the FM region. An apparatus is provided which comprises: a FM region with MS property; a PZe region adjacent to the FM region; and a magnetoelectric region, wherein the FM region is at least partially adjacent to the magnetoelectric region. An apparatus is provided which comprises: a FM region with MS property; a PZe region adjacent to the FM region; a magnetoelectric region being adjacent to the FM and PZe regions; a first electrode adjacent to the FM and PZe regions; a second electrode adjacent to the magnetoelectric region; a spin orbit coupling (SOC) region adjacent to the magnetoelectric region; and a third electrode adjacent to the SOC region.

A magnetostrictive material includes a FeGaBa alloy that is represented by Expression (1),
Fe.sub.(100-x-y)Ga.sub.xBa.sub.y  (1) (in Expression (1), x and y are respectively a content rate (at. %) of Ga and a content rate (at. %) of Ba, and satisfy that y≤0.012x−0.168, y≤−0.05x+1.01, and y≥−0.04/7x+0.87/7).

Provided herein is a magnetostriction element having a large power output and a high power density. The magnetostriction element is comprised of a magnetostrictive material that is a monocrystalline alloy represented by the following formula (1),
Fe.sub.(100-α-β)Ga.sub.αX.sub.β,  Formula (1)
wherein α and β represent the Ga content (at %) and the X content (at %), respectively, X is at least one element selected from the group consisting of Sm, Eu, Gd, Tb, Dy, Cu, and C, and the formula satisfies 5≤α≤40, and 0≤β≤1.

Exemplary practice of the present invention provides a magnetostrictive actuator characterized by linear force output and uniform magnetic biasing. A center bias magnet drives flux through series magnetostrictive bars in opposite directions while surrounding drive coils apply flux in the same direction through the bars. The net response is substantially linear with respect to the drive coil current. A second parallel set of magnetostrictive bars completes the flux path and adds to the actuator output force. Flux leakage between the parallel bars is compensated by a ferromagnetic shunt or by a tapered magnet providing uniform flux density down the length of the magnetostrictive bars. The closed flux path allows magnetic shielding of the entire actuator, if desired.

A plurality of conductive via connections are fabricated on a substrate located at positions where MTJ devices are to be fabricated, wherein a width of each of the conductive via connections is smaller than or equivalent to a width of the MTJ devices. The conductive via connections are surrounded with a dielectric layer having a height sufficient to ensure that at the end of a main MTJ etch, an etch front remains in the dielectric layer surrounding the conductive via connections. Thereafter, a MTJ film stack is deposited on the plurality of conductive via connections surrounded by the dielectric layer. The MTJ film stack is etched using an ion beam etch process (IBE), etching through the MTJ film stack and into the dielectric layer surrounding the conductive via connections to form the MTJ devices wherein by etching into the dielectric layer, re-deposition on sidewalls of the MTJ devices is insulating.

Embodiments of a magnetic field sensor of the present disclosure includes magnetoelectric nanowires suspended above a substrate across electrodes without substrate clamping. This results in enhanced magnetoelectric coupling by reducing substrate clamping when compared to layered thin-film architectures. Accordingly, the magnetoelectric nanowires of the magnetic field sensor generate a voltage response in the presence of a magnetic field.