A ferromagnetic multilayer film includes first and second magnetization fixed layers, first and second interposed layers, and a magnetic coupling layer. The magnetization fixed layers are antiferromagnetically coupled by exchange coupling via the interposed layers and the magnetic coupling layer. A main element of the magnetic coupling layer is Ru, Rh, or Ir. A main element of the first interposed layer is the same as that of the magnetic coupling layer. A main element of the second interposed layer is different from that of the magnetic coupling layer. A thickness of the first interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of the main element of the first interposed layer. A thickness of the second interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the second interposed layer.

The present application relates to copper-doped double perovskites, for example, copper-doped double perovskites of the formula (I) and to uses thereof, for example as low-bandgap materials such as a semiconducting material in a device. The present application also relates to methods of tuning the bandgap of a Cs.sub.2SbAgZ.sub.6 double perovskite (for example, wherein Z is Cl) comprising doping the double perovskite with copper.

Cs.sub.2Sb.sub.1-aAg.sub.1-bCu.sub.2xZ.sub.6(I)

A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization fixed layer includes a first fixed layer and a second fixed layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first fixed layer and the second fixed layer. The first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co and Ni.

A non-contact force type micro-rotating mechanism driven by attractive/repulsive force and a manufacturing method thereof, belongs to the field of intelligent micro devices, and mainly relates to micro electromechanical system technology, precision machining technology, precision assembly and the like. The mechanism adopts the interaction force between magnetic poles to replace the connection mode of a traditional through-hole bearing pressure spring positioning shaft, so that the component part structure of the mechanism can be optimized, and the space utilization rate can be greatly improved. Moreover, the attractive force type structure also has the effect of weakening the radial vibration of the motor, and the coaxiality of the rotor and the stator is improved in the running process of the motor. Meanwhile, the rotating mechanism does not directly output shaft work, a structure can be added on the disc-shaped rotor to realize different functions, an actuator and a control object are integrated.

A compact magnetic-based battery device that offers energy, a large number of cycles, a long storage time, and a short charging time is provided. The rechargeable battery device can include a first magnetic layer, a second magnetic layer, a dielectric layer disposed between the first magnetic layer and the second magnetic layer, and a plurality of high anisotropic magnetic nanoparticles embedded into the dielectric layer.

A magnetoelectric energy harvester having excellent power generation performance and a manufacturing method thereof are provided. The magnetoelectric energy harvester includes a magnetostrictive material portion including a magnetostrictive material which generates a mechanical deformation when being magnetized. The magnetoelectric energy harvester also includes a piezoelectric material portion which has a bending vibration mode and includes a piezoelectric material which produces power by receiving a mechanical deformation force from the magnetostrictive material portion.

Structures for a sensor and methods of forming such structures. A sensing element includes a free magnetic layer, a pinned magnetic layer, and a non-magnetic conductive spacer layer between the free magnetic layer and the pinned magnetic layer. A dummy element is positioned outside of an outer boundary of the sensing element. The dummy element is detached from the sensing element.

Magnetoelectric devices based on piezoelectric/magnetostrictive bilayers are provided. Also provided are methods of using the devices to modulate or to sense the magnetization of the magnetostrictive material. The devices include an island of magnetostrictive material that is strain-coupled to a thin layer of a piezoelectric material at an interface. A bottom electrode is placed in electrical communication with one surface of the piezoelectric film, and an unpaired top electrode is placed in electrical communication with a second, opposing surface of the piezoelectric film.

An actuator device includes at least one actuator element, which consists at least partially of a magnetically shape-shiftable material and which is configured at least for the purpose of causing a movement of at least one actuation element in at least one direction of movement by means of a contraction, and having a magnetic contraction unit, which is configured for the purpose of supplying a magnetic field acting upon the actuator element in order to generate a contraction of the actuator element. In the region of the actuator element, field lines of the magnetic field are aligned at least substantially parallel to the direction of movement.

A magnetostrictive element that can exhibit a sufficiently large magnetostriction amount in a longitudinal direction is formed of a single crystal alloy magnetostrictive material. The magnetostrictive element has a shape of a plate-shaped rectangular parallelepiped, a main plane of the plate-shaped rectangular parallelepiped includes a plurality of magnetic domains that are regions where atomic magnetic moments are arranged in the same direction and whose width is 10 m to 200 m, and a total area rate of a magnetic domain where an angle difference between a lateral direction of the main plane and a direction of the magnetic moments of the magnetic domain is 10 or less to the main plane is 60% to 100%.