Methods of forming microelectronic package structures, and structures formed thereby, are described. Those methods/structures may include attaching a die on a board, attaching a substrate on the die, wherein the substrate comprises a first region and a peripheral region, attaching a first memory device on the central region of the substrate, and attaching at least one additional memory device on the peripheral region of the substrate, wherein the at least one additional memory device is not disposed over the die.

A method for manufacturing a semiconductor device includes providing a semiconductor substrate having a core region and a peripheral region, and prior to forming a metal silicide in the core region, forming a sidewall layer on opposite sides of a gate structure of a core region device. The sidewall layer includes sequentially, from the inside out, a silicon oxide layer, a first silicon nitride layer, a first silicon nitride layer, a second silicon oxide layer, and a second silicon nitride layer, or the sidewall layer includes, from inside out, a first silicon nitride layer and a second silicon nitride layer. The sidewall layer having such structure ensures that the formed metal silicide has a good morphology in the core region to achieve good device performance.

Methods of forming microelectronic package structures, and structures formed thereby, are described. Those methods/structures may include attaching a die on a board, attaching a substrate on the die, wherein the substrate comprises a first region and a peripheral region, attaching a first memory device on the central region of the substrate, and attaching at least one additional memory device on the peripheral region of the substrate, wherein the at least one additional memory device is not disposed over the die.

A semiconductor device includes a wiring layer that includes at least one low-dielectric rate interlayer insulating film layer; a guard ring that is formed by placing in series a wire and a via so as to be in contact with a through electrode, in a portion in which the through electrode passing through the wiring layer is formed; and the through electrode that is formed by being buried inside the guard ring.

Isolation between vertical thyristor memory cells in an array is improved with isolation regions between the vertical thyristor memory cells. The isolation regions are formed by electrically isolating cores surrounded by insulating material, such as silicon dioxide, in trenches between the memory cells. The electrically isolating cores may be tubes of air or conducting rods. Methods of constructing the isolation regions in a processes for manufacturing vertical thyristor memory cell arrays are also disclosed.