H10D30/0218

LIGHT-EMITTING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, DISPLAY PANEL

The present disclosure provides a light-emitting substrate. The light-emitting substrate includes a backboard, a light-emitting layer and a plurality of first optical bodies. The light-emitting layer is located on a side of the backboard; the light-emitting layer includes a plurality of light-emitting units, and the plurality of light-emitting units are arranged in an array. Each first optical body includes a first optical portion and a second optical portion; a gap between two adjacent light-emitting units is filled with the first optical portion, and the second optical portion is located on a side of the light-emitting layer away from the backboard, and is connected to the first optical portion. The second optical portion includes a first surface extending outwards from an edge of the first optical portion.

PIXEL UNIT FOR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD, MICRO DISPLAY SCREEN, DISCRETE DEVICE
20240405184 · 2024-12-05 · ·

This application discloses a pixel unit for semiconductor device and a manufacturing method, a micro display screen, and a discrete device, the pixel unit includes a target drive circuit, a display unit, and a common cathode, the backplane is provided with a drive circuit, and the drive circuit is provided with at least one anode; the display unit is provided on the backplane, it includes a first device layer and a second device layer stacked vertically from bottom to top, the first device layer and the second device layer are respectively connected to the corresponding anodes of the backplane; the common cathode is respectively connected to each device layer in the display unit, and the common cathode is connected to the external cathode.

MONOLITHIC ARRAY CHIP

A monolithic array chip comprises a first semiconductor layer; a common electrode located on the first semiconductor layer; a first light-emitting unit with a first electrode located on the first semiconductor layer; a second light-emitting unit with a second electrode located on the first semiconductor layer; a third light-emitting unit with a third electrode located on the first semiconductor layer, wherein the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are separated from each other by a trench.