A semiconductor device of an embodiment includes an element region and a termination region surrounding the element region. The element region includes a gate trench, a first silicon carbide region of n-type, a second silicon carbide region of p-type on the first silicon carbide region, a third silicon carbide region of n-type on the second silicon carbide region, and a fourth silicon carbide region of p-type sandwiches the first silicon carbide region and the second silicon carbide region with the gate trench, the fourth silicon carbide region being deeper than the gate trench. The termination region includes a first trench surrounding the element region, and a fifth silicon carbide region of p-type between the first trench and the first silicon carbide region, the fifth silicon carbide region same or shallower than the fourth silicon carbide region. The semiconductor device includes a gate electrode, a first electrode, and a second electrode.

A safety torque off (STO) device interrupts torque generation by an elevator installation drive machine supplied by a power supply device being part of an inverter device, for example. The STO device includes a control input, signal input terminals connected to signal generation device outputs and signal output terminals connected to driver circuit inputs. Each of the STO signal input terminals is electrically connected to an associated one of the signal generation device outputs via first and second signal transmission switches connected in series. The control input is connected to first and second control units, wherein the first control unit, controlled by a control signal applied to the control input, switches switching states of all the first signal transmission switches and the second control unit, controlled by a control signal applied to the control input, switches switching states of all of the second signal transmission switches.

A semiconductor device of an embodiment includes: a silicon carbide layer including a first silicon carbide region of n-type containing one metal element selected from a group consisting of nickel (Ni), palladium (Pd), platinum (Pt), and chromium (Cr) and a second silicon carbide region of p-type containing the metal element; and a metal layer electrically connected to the first silicon carbide region and the second silicon carbide region. Among the metal elements contained in the first silicon carbide region, a proportion of the metal element positioned at a carbon site is higher than a proportion of the metal element positioned at an interstitial position. Among the metal elements contained in the second silicon carbide region, a proportion of the metal element positioned at an interstitial position is higher than a proportion of the metal element positioned at a carbon site.

A force application assembly, an elevator and a method of elevator rescue. The force application assembly is provided for applying a force to an elevator car when the elevator car and a counterweight are in a balanced state, and the force application assembly includes: a first attachment portion, which is configured to be removably attached to an elevator hoistway; a second attachment portion, one end of which is removably fixed relative to the elevator car or the counterweight, and which is configured to be at least partially elastic; an actuation portion connected between the first attachment portion and the second attachment portion, wherein the first attachment portion is configured to be fixed relative to the actuation portion, and the second attachment portion is configured to be movable relative to the actuation portion; and an operation portion, which is associated with the actuation portion.

The invention relates to a drive machinery for an elevator, the drive machinery comprising a rotatable drive sheave for driving plurality of ropes of the elevator, and a motor for rotating the drive sheave; the drive sheave comprising a drive sheave body rotatable around a rotational axis; and plurality of rim arrangements mounted on the drive sheave body side by side in direction of said rotational axis, each said rim arrangement defining a circular outer rim for transmitting traction to a rope, said circular outer rims being coaxial with each other. The diameter of the circular outer rim of one or more of said rim arrangements is individually adjustable for enlarging or reducing the turning radius of a rope passing around the circular outer rim in question. The invention also relates to an elevator comprising said drive machinery.

A winding overhang (20) configured for supporting windings of an electric motor (40) comprise a cylindrical wall (22) extending around a center axis (A). The cylindrical wall (22) includes a plurality of grooves (28a-28e) formed along the circumference (37, 38) of the cylindrical wall (22), each groove (28a-28e) having a constant width (W) along the circumference (37, 38); and a plurality of openings (26) having different heights (H1, H2, H3, H4, H5). Each opening (26) extends from an end surface (36) of cylindrical wall (22) and allows a wire (30a-30c) to pass between an outer area (34) outside the cylindrical wall (22) and an inner space (32) defined by the cylindrical wall (22).

According to an embodiment, an elevator system including: a beam climber system configured to move an elevator car through an elevator shaft by climbing a first guide beam that extends vertically through the elevator shaft, the first guide beam including a first surface and a second surface opposite the first surface, the beam climber system including: a first wheel; a second wheel; a first traction belt wrapped around the first wheel and the second wheel, the first traction belt being in contact with the first surface; and a first electric motor configured to rotate the first wheel, wherein the first traction belt is configured to rotate when the first wheel rotates.

A semiconductor device according to an embodiment includes: a silicon carbide layer; a silicon oxide layer; and a region disposed between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration equal to or more than 1×10.sup.21 cm.sup.−3. A nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region have a peak in the region, a nitrogen concentration at a first position 1 nm away from the peak to the side of the silicon oxide layer is equal to or less than 1×10.sup.18 cm.sup.−3 and a carbon concentration at the first position is equal to or less than 1×10.sup.18 cm.sup.−3, and a nitrogen concentration at a second position 1 nm away from the peak to the side of the silicon carbide layer is equal to or less than 1×10.sup.18 cm.sup.−3.

A semiconductor device of embodiments includes: a silicon carbide layer having a first face and a second face; a trench in the silicon carbide layer extending in a first direction; a gate electrode disposed in the trench; a first silicon carbide region of n-type; a second silicon carbide region of p-type between the first silicon carbide region and the first face being shallower than the trench; a third silicon carbide region of n-type disposed between the second silicon carbide region and the first face; a fourth silicon carbide region of n-type disposed between the third silicon carbide region and the first face, a width of the fourth silicon carbide region in a second direction perpendicular to the first direction being smaller than a width of the third silicon carbide region in the second direction; and a first electrode in contact with the fourth silicon carbide region.

This semiconductor device according to an embodiment includes: a silicon carbide layer; a gate electrode; a silicon oxide layer between the silicon carbide layer and the gate electrode; and a region between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration not less than 1×10.sup.21 cm.sup.−3. A nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region has its peak in the region, and a state density Z.sub.1/2 in a portion is not more than 1×10.sup.11 cm.sup.−3. The portion is within 100 nm from the silicon oxide layer toward the silicon carbide layer. A nitrogen concentration and a carbon concentration in a position 1 nm from the peak toward the silicon oxide layer is not more than 1×10.sup.18 cm.sup.−3, and a nitrogen concentration in a position 1 nm from the peak toward the silicon carbide layer is not more than 1×10.sup.18 cm.sup.−3.