Patent classifications
B81B3/0005
COMPUTATIONAL METHODS FOR PREDICTING ADHESION CHARACTERISTICS OF MOLECULAR COATINGS
A computational method for predicting one or more adhesion characteristics of a candidate molecular coating. The computational method includes linking molecules of the candidate molecular coating to first anchor sites of a first substrate layer to obtain a first monolayer, arranging the first anchor sites in a two-dimensional (2D) lattice to obtain a close-packed first monolayer, spatially inverting the close-packed first monolayer to obtain a second monolayer associated with a second substrate layer, and predicting one or more adhesion characteristics of the candidate molecular coating for use in resisting stiction between the first and second substrate layers.
Selective self-assembled monolayer patterning with sacrificial layer for devices
Selective self-assembled monolayer patterning with sacrificial layer for devices is provided herein. A sensor device can include a handle layer and a device layer that comprises a first side and a second side. First portions of the first side are operatively connected to defined portions of the handle layer. At least one area of the second side comprises an anti-stiction area formed with an anti-stiction coating. The device can also include a Complementary Metal-Oxide-Semiconductor (CMOS) wafer operatively connected to second portions of the second side of the device layer. The CMOS wafer comprises at least one bump stop. The anti-stiction area faces the at least one bump stop.
MEMS Structure with Graphene Component
A microelectromechanical systems (MEMS) structure includes a substrate, an epitaxial polysilicon cap located above the substrate, a first cavity portion defined between the substrate and the epitaxial polysilicon cap, and a first graphene component having at least one graphene surface immediately adjacent to the first cavity portion.
Anti-stiction process for MEMS device
A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.
Rough anti-stiction layer for MEMS device
The present disclosure relates to a MEMS package with a rough metal anti-stiction layer, to improve stiction characteristics, and an associated method of formation. In some embodiments, the MEMS package includes a MEMS IC bonded to a CMOS IC. The CMOS IC has a CMOS substrate and an interconnect structure disposed over the CMOS substrate. The interconnect structure includes a plurality of metal layers disposed within a plurality of dielectric layers. The MEMS IC is bonded to an upper surface of the interconnect structure and, in cooperation with the CMOS IC, enclosing a cavity between the MEMS IC and the CMOS IC. The MEMS IC has a moveable mass arranged in the cavity. The MEMS package further includes an anti-stiction layer disposed on the upper surface of the interconnect structure under the moveable mass. The anti-stiction layer is made of metal and has a rough top surface.
Anti-stiction enhancement of ruthenium contact
A method of manufacturing a MEMS device. The MEMS device has a cavity in which a beam will move to change the capacitance of the device. After most of the device build-up has occurred, sacrificial material is removed to free the beam within the MEMS device cavity. Thereafter, exposed ruthenium contacts are exposed to fluorine to either: dope exposed ruthenium and reduce surface adhesive forces, form fluorinated Self-Assembled Monolayers on the exposed ruthenium surfaces, deposit a nanometer passivating film on exposed ruthenium, or alter surface roughness of the ruthenium. Due to the fluorine treatment, low resistance, durable contacts are present, and the contacts are less susceptible to stiction events.
Method and system for fabricating a MEMS device
A device includes a substrate and an intermetal dielectric (IMD) layer disposed over the substrate. The device also includes a first plurality of polysilicon layers disposed over the IMD layer and over a bumpstop. The device also includes a second plurality of polysilicon layers disposed within the IMD layer. The device includes a patterned actuator layer with a first side and a second side, wherein the first side of the patterned actuator layer is lined with a polysilicon layer, and wherein the first side of the patterned actuator layer faces the bumpstop. The device further includes a standoff formed over the IMD layer, a via through the standoff making electrical contact with the polysilicon layer of the actuator and a portion of the second plurality of polysilicon layers and a bond material disposed on the second side of the patterned actuator layer.
FORMING A PASSIVATION COATING FOR MEMS DEVICES
In described examples, a MEMS device component includes a passivation layer formed from a vapor and/or a liquid compound that may include precursors. The compound may contain amino acid, antioxidants, nitriles or other compounds, and may be disposed on a surface of the MEMS device component and/or a package or package portion thereof. If the compound is a precursor, it may be treated to cause formation of the passivation layer from the precursor.
MEMS structure and method of forming same
A microelectromechanical system (MEMS) device includes a substrate and a movable element at least partially suspended above the substrate and having at least one degree of freedom. The MEMS device further includes a protrusion extending from the substrate and configured to contact the movable element when the movable element moves in the at least one degree of freedom, wherein the protrusion comprises a surface having a water contact angle of higher than about 15 measured in air.
Semiconductor MEMS structure and manufacturing method thereof
The present disclosure provides a method of manufacturing a structure. The method comprises: providing a first substrate; forming a plurality of conductive pads over the first substrate; forming a film on a first subset of the plurality of conductive pads, thereby leaving a second subset of the plurality of conductive pads exposed from the film; forming a self-assembled monolayer (SAM) over the film; and forming a cavity by the first substrate and a second substrate through bonding a portion of the second substrate to the second subset of the plurality of conductive pads that are exposed from the film.