An optoelectronic component includes an optical transducer made of III-V semiconductor material and an optical scanning microelectromechanical system comprising a mirror. The optical transducer and the optical scanning microelectromechanical system are produced on a common wafer comprising at least a first layer made of silicon or silicon nitride with a thickness of less than one micron and wherein at least the mirror and its holding springs are produced. In a first variant, the mobile parts of the optical scanning microelectromechanical system are produced in various layers of silicon. In a second variant, the mobile parts of the optical scanning microelectromechanical system are produced in the layer of III-V semiconductor material.

A MEMS component. The MEMOS component includes a micromechanical membrane spring including first and second membrane spring elements with an at least regional two-dimensional curvature. The first membrane spring element is mechanically coupled to the second membrane spring element such that a resulting spring force of the membrane spring is imparted by the first and second membrane spring elements. The membrane spring is integrated into a layer structure of the MEMS component such that the resulting spring force of the membrane spring acts substantially in the layer sequence direction of the layer structure. A device for preloading the membrane spring is configured to set an operating point of the membrane spring with respect to the spring characteristic curve using permanent elastic deflection of the membrane spring, such that the operating point is in an approximately linear spring characteristic curve range of the membrane spring with a slight gradient.

A vibration detector includes a diaphragm including a fixed end forming a line segment extending in a first direction; and a reference point farthest from the fixed end in a second direction orthogonal to the first direction; and a support portion supporting the diaphragm at the fixed end. The vibration detector satisfies a formula below:

[00001]$\frac{L^3}{8W_0}<{}_0^L\frac{1}{W\left(x\right)}{}_0^{x}W\left(\right)d{\mathrm{dx}}^2$ where x denotes a distance in the second direction between the reference point and a point on the diaphragm, denotes a point within a distance of x from the reference point in the second direction, W(x) denotes a width of the diaphragm at the distance of x in the first direction, L denotes a length of the diaphragm between the fixed end and the reference point in the second direction, and W0 denotes a width of the diaphragm in the first direction when the diaphragm has a rectangular shape.

A method of fabrication of one or more ultra-miniature piezoresistive pressure sensors on silicon wafers is provided. The diaphragm of the piezoresistive pressure sensors is formed by fusion bonding. The piezoresistive pressure sensors can be formed by silicon deposition, photolithography and etching processes.

A micromechanical component is provided having a substrate having a main plane of extension, a first electrode extending mainly along a first plane in planar fashion, a second electrode extending mainly along a second plane in planar fashion, and a third electrode extending mainly along a third plane in planar fashion, the first, second, and third plane being oriented essentially parallel to the main plane of extension and being situated one over the other at a distance from one another along a normal direction that is essentially perpendicular to the main plane of extension, the micromechanical component having a deflectable mass element, the mass element being capable of being deflected both essentially parallel and also essentially perpendicular to the main plane of extension, the second electrode being connected immovably to the mass element, the second electrode having, in a rest position, a first region of overlap with the first electrode along a projection direction essentially parallel to the normal direction, and having a second region of overlap with the third electrode along a projection direction parallel to the projection direction, the mass element extending in planar fashion mainly along the third plane, the mass element having a recess that extends completely through the mass element, extending in planar fashion along the third plane and parallel to the normal direction, the third electrode being situated at least partly in the recess.

A method for a capacitive micromachined ultrasound transducer (cMUT) is provided. The method grows and patterns a diffusion barrier layer over a surface of a base layer. The diffusion barrier layer have different areas that allow different levels of diffusion penetration. A diffusion process is performed over the diffusion barrier layer such that a diffusion reactivated material reaches different depths into the base layer below the different areas. A anchor is formed using the diffusion reactivated material. The anchor has a lower portion below a major surface of the base layer and an upper portion above the major surface of the base layer. A cover layer is placed over the anchor and the base layer. At least one of the cover layer and the base layer includes a flexible layer, such that the cMUT electrodes are movable relative to each other to cause a change of the gap width.

A micro-electro-mechanical system (MEMS) chip package including a circuit substrate, a driving chip and a MEMS sensor is provided. The circuit substrate has a first surface and a second surface opposite thereto. The driving chip is embedded within the circuit substrate and includes a first signal transmission electrode, a second signal transmission electrode and a third signal transmission electrode. The MEMS sensor is disposed on the first surface of the circuit substrate. The circuit substrate includes at least one first conductive wiring electrically connected with the first signal transmission electrode and at least one second conductive wiring electrically connected with the second signal transmission electrode. The first conductive wiring is merely exposed at the first surface and the second conductive wiring is merely exposed at the second surface. The MEMS sensor is electrically connected with the first signal transmission electrode through the first conductive wiring.

The present invention achieves a pressure-sensitive sensor which can detect information on a pressure, a sound pressure, acceleration, gas and the like, with high sensitivity. The pressure-sensitive sensor includes: a cantilever (22); a frame (23) which is provided around the cantilever (22) and holds a base end of the cantilever (22); a gap (24) formed between the cantilever (22) and the frame (23); and a liquid (28) which seals the gap (24).

A method of forming a micromechanical structure comprising, forming a sacrificial layer on a surface and walls of a trench in a substrate; depositing a structural layer over the sacrificial layer, extending into the trench, selectively etching the structural layer to define a pattern having a boundary, at least a portion of the structural layer overlying a respective portion of the trench being removed and at least a portion of the structural layer extending into the trench being preserved at the boundary; and removing at least a portion of the sacrificial layer from underneath the structural layer, prior to removal of at least a portion of the sacrificial layer extending into the trench at the structural boundary. A micromechanical structure formed by the method is also provided.

A micromechanical sensor is provided which includes a substrate having a main plane of extension and a rocker structure which is connected to the substrate via a torsion means. The torsion means extends primarily along a torsion axis, and the torsion axis is situated essentially in parallel to the main plane of extension of the substrate. The rocker structure is pivotable about the torsion axis from a neutral position into a deflected position, and the rocker structure has a mass distribution which is asymmetrical with respect to the torsion axis. The mass distribution is designed in such a way that a torsional motion of the rocker structure about the torsion axis is effected as a function of an inertial force which is oriented along a Z direction which is essentially perpendicular to the main plane of extension of the substrate.