An extensional mode electrostatic microelectromechanical systems (MEMS) gyroscope is described. The MEMS gyroscope operates in an extensional mode. The MEMS gyroscope comprises a vibrating ring structure that is electrostatically excited in the extensional mode.

The present invention relates to a method of manufacturing a capacitive micro- machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

A direct current electric arc furnace (1) for metallurgical plant comprises an electrode (3) having a base (4) and a plurality of metal bars (5) fixed to the base (4); each of said metal bars (5) comprises at least a first portion (12) and at least a second portion (13) which is axially adjacent to said first portion (12), said first portion (12) being restrained to said base (4) and having greater thermal conductivity with respect to said second portion (13).

A sensing device comprising a first array of electrodes encapsulated in a first elastomeric layer; a second array of electrodes encapsulated in a second elastomeric layer; a third elastomeric layer intermediate the first and second elastomeric layer and comprising an array of micro-structures, wherein said electrodes and elastomeric layers are configured such that a displacement of said micro-structures, in response to one or more forces and/or pressures applied to said device, causes a capacitance of said device to vary as a function of said forces and/or pressure applied.

Embodiments of the present invention provide an MEMS actuator with a substrate, at least one post attached to the substrate and a deflectable actuator body that is connected to the at least one post via at least one spring, wherein, during electrostatic, electromagnetic or magnetic force application, the actuator body takes a second position starting from a first position by a tilt-free translational movement, wherein the first position and the second position are different, and wherein in a top view of the MEMS actuator the actuator body is arranged outside an area spanned by the at least one post.

Magnet placement is described for integrated circuit packages. In one example, a terminal is applied to a magnet. The magnet is then placed on a top layer of a substrate with solder between the terminal and the top layer, and the solder is reflowed to attach the magnet to the substrate.

A device comprises a silicon-on-insulator (SOI) substrate having first and second silicon layers with an insulator layer interposed between them. A structural layer, having a first conductivity type, is formed on the first silicon layer. A well region, having a second conductivity type opposite from the first conductivity type, is formed in the structural layer, and resistors are diffused in the well region. A metallization structure is formed over the well region and the resistors. A first cavity extends through the metallization structure overlying the well region and a second cavity extends through the second silicon layer, with the second cavity stopping at one of the first silicon layer and the insulator layer. The well region interposed between the first and second cavities defines a diaphragm of a pressure sensor. An integrated circuit and the pressure sensor can be fabricated concurrently on the SOI substrate using a CMOS fabrication process.

A MEMS microphone includes a substrate defining a cavity, a diaphragm being spaced apart from the substrate, covering the cavity, and being configured to generate a displacement thereof in response to an applied acoustic pressure, an anchor extending from an end portion of the diaphragm, the anchor including a lower surface in contact with an upper surface of the substrate to support the diaphragm, a back plate disposed over the diaphragm, the back plate being spaced apart from the diaphragm such that an air gap is maintained between the back plate and the diaphragm, and defining a plurality of acoustic holes and an upper insulation layer provided on the substrate, covering the back plate, and holding the back plate to space the back plate from the diaphragm, the upper insulation layer having a flat plate shape to prevent sagging of the back plate.

A JFET structure may be formed such that the channel region is isolated from the substrate to reduce parasitic capacitance. For example, instead of using a deep well as part of a gate structure for the JFET, the deep well may be used as an isolation region from the surrounding substrate. As a result, the channel in the JFET may be pinched laterally between doped regions located between the source and the drain of the JFET. In other example embodiments, the channel may be pinched vertically and the isolation between the JFET structure and the substrate is maintained. A JFET structure with improved isolation from the substrate may be employed in some embodiments as a low-noise amplifier. In particular, the low-noise amplifier may be coupled to small signal devices, such as microelectromechanical systems (MEMS)-based microphones.

Embodiments of a packaged electronic device and method of fabricating such a device are provided, where the packaged electronic device includes: a pressure sensor die having a diaphragm on a front side; an encapsulant material that encapsulates the pressure sensor die, wherein the front side of the pressure sensor die is exposed at a first major surface of the encapsulant material; an interconnect structure formed over the front side of the pressure sensor die and the first major surface of the encapsulant material, wherein an opening through the interconnect structure is generally aligned to the diaphragm; and a cap attached to an outer dielectric layer of the interconnect structure, the cap having a vent hole generally aligned with the opening through the interconnect structure.