B81B3/0029

TRIBOLUMINESCENCE ISOTOPE BATTERY
20200051707 · 2020-02-13 ·

A triboluminescence isotope battery can include a housing defining a chamber, and one or more energy conversion devices. Each energy conversion device can include a holder, a cantilever beam, a triboluminescence component, a first photoelectric conversion component, a radioactive source, a first charge collecting component, a second charge collecting, a first thermoelectric conversion component, and a heat dissipation component.

MEMS sensors and systems

Disclosed herein are MEMS devices and systems and methods of manufacturing or operating the MEMS devices and systems. In some embodiments, the MEMS devices and systems are used in imaging applications.

TECHNIQUES FOR BIDIRECTIONALTRANSDUCTION OF QUANTUM LEVEL SIGNALS BETWEEN OPTICAL AND MICROWAVE FREQUENCIES USING A COMMON ACOUSTIC INTERMEDIARY

Embodiments described herein include systems and techniques for converting (i.e., transducing) a quantum-level (e.g., single photon) signal between the three wave forms (i.e., optical, acoustic, and microwave). A suspended crystalline structure is used at the nanometer scale to accomplish the desired behavior of the system as described in detail herein. Transducers that use a common acoustic intermediary transform optical signals to acoustic signals and vice versa as well as microwave signals to acoustic signals and vice versa. Other embodiments described herein include systems and techniques for storing a qubit in phonon memory having an extended coherence time. A suspended crystalline structure with specific geometric design is used at the nanometer scale to accomplish the desired behavior of the system.

Light-based tactile sensing with directional sensitivity

A device includes a substrate and a set of force sensors supported by the substrate. Each force sensor includes a pillar extending outward from the substrate, each pillar comprising a stack of semiconductor layers, the stack of semiconductor layers being configured to emit light upon biasing of the stack of semiconductor layers, and post disposed along only a portion of a perimeter of the pillar such that, taken together, the pillar and the post have an asymmetrical cross-sectional shape. Each pillar has a cross-section elongated along an axis. An orientation of the axis, and a peripheral position of the portion of the perimeter at which the post is disposed, differ across the set of force sensors such that a variation in light emitted by the stack of semiconductor layers of one or more of the force sensors is indicative of a direction of a shear force applied to the set of force sensors.

Techniques for bidirectional transduction of quantum level signals between optical and microwave frequencies using a common acoustic intermediary

Embodiments described herein include systems and techniques for converting (i.e., transducing) a quantum-level (e.g., single photon) signal between the three wave forms (i.e., optical, acoustic, and microwave). A suspended crystalline structure is used at the nanometer scale to accomplish the desired behavior of the system as described in detail herein. Transducers that use a common acoustic intermediary transform optical signals to acoustic signals and vice versa as well as microwave signals to acoustic signals and vice versa. Other embodiments described herein include systems and techniques for storing a qubit in phonon memory having an extended coherence time. A suspended crystalline structure with specific geometric design is used at the nanometer scale to accomplish the desired behavior of the system.

Aluminum nitride (AlN) devices with infrared absorption structural layer

A micro-electro-mechanical system device is disclosed. The micro-mechanical system device comprises a first silicon substrate comprising: a handle layer comprising a first surface and a second surface, the second surface comprises a cavity; an insulating layer deposited over the second surface of the handle layer; a device layer having a third surface bonded to the insulating layer and a fourth surface; a piezoelectric layer deposited over the fourth surface of the device layer; a metal conductivity layer disposed over the piezoelectric layer; a bond layer disposed over a portion of the metal conductivity layer; and a stand-off formed on the first silicon substrate; wherein the first silicon substrate is bonded to a second silicon substrate, comprising: a metal electrode configured to form an electrical connection between the metal conductivity layer formed on the first silicon substrate and the second silicon substrate.

LIGHT RESPONSIVE POLYMER MAGNETIC MICROROBOTS

A microrobot is disclosed. The microrobot includes a magnet configured to provide a motive force when magnetic force of one or more electrical coils act upon the magnet, a support member coupled to the magnet, a thermo-responsive polymer member coupled to each end of the support member at a proximal end, the thermo-responsive polymer member configured to articulate when heated, wherein the thermo-responsive polymer members configured to receive light from a microrobot structured light system and convert the received light into heat.

Zero Power Plasmonic Microelectromechanical Device
20190006136 · 2019-01-03 ·

A zero-power plasmonic microelectromechanical system (MEMS) device is capable of specifically sensing electromagnetic radiation and performing signal processing operations. Such devices are highly sensitive relays that consume no more than 10 nW of power, utilizing the energy in detected electromagnetic radiation to detect and discriminate a target without the need of any additional power source. The devices can continuously monitor an environment and wake up an electronic circuit upon detection of a specific trigger signature of electromagnetic radiation, such as vehicular exhaust, gunfire, an explosion, a fire, a human or animal, and a variety of sources of radiation from the ultraviolet to visible light, to infrared, to terahertz radiation.

Stimulating an optical sensor using optical radiation pressure

A method of stimulating a MicroElectroMechanical Systems (MEMS) structure (e.g. a cantilever), and an optical sensor for use in such a method, using optical radiation pressure instead of electrostatic pressure, or the like. An optical pulse creates optical radiation pressure which stimulates movement of the MEMS structure and then movement of the MEMS structure may be measures. An interrogating light may be input after the optical pulse to measure movement of the MEMS structure. Advantageously, the same light source can be utilized to stimulate movement of the MEMS structure and to measure movement of the MEMS structure.

TECHNIQUES FOR BIDIRECTIONAL TRANSDUCTION OF QUANTUM LEVEL SIGNALS BETWEEN OPTICAL AND MICROWAVE FREQUENCIES USING A COMMON ACOUSTIC INTERMEDIARY

A device includes an opto-acoustic transducer configured to convert between an optical signal and an acoustic signal, an electro-acoustic transducer coupled to a microwave resonant circuit and configured to convert between an acoustic signal and a microwave signal, and an acoustic waveguide coupling the opto-acoustic transducer to the electro-acoustic transducer.