A modification to rough polysilicon using ion implantation and silicide is provided herein. A method can comprise depositing a hard mask on a single crystal silicon, patterning the hard mask, and depositing metal on the single crystal silicon. The method also can comprise forming silicide based on causing the metal to react with exposed silicon of the single crystal silicon. Further, the method can comprise removing unreacted metal and stripping the hard mask from the single crystal silicon. Another method can comprise forming a MEMS layer based on fusion bonding a handle MEMS with a device layer. The method also can comprise implanting rough polysilicon on the device layer. Implanting the rough polysilicon can comprise performing ion implantation of the rough polysilicon. Further, the method can comprise performing high temperature annealing. The high temperature can comprise a temperature in a range between around 700 and 1100 degrees Celsius.

A micromechanical constituent includes an actuator designed to impart to a displaceable element a first displacement motion around a first rotation axis and a second displacement motion around a second rotation axis oriented tiltedly with respect to the first rotation axis, the actuator including a permanent magnet on a first spring element and a one second permanent magnet on a second spring element, where the first permanent magnet is excitable to perform a first translational motion tiltedly with respect to the first rotation axis and tiltedly with respect to the second rotation axis, and the second permanent magnet is excitable to perform a second translational motion directed oppositely to the first translational motion, causing the second displacement motion of the displaceable element around the second rotation axis.

Described herein is a miniaturized and ruggedized wafer level MEMS force sensor composed of a base and a cap. The sensor employs multiple flexible membranes, a mechanical overload stop, a retaining wall, and piezoresistive strain gauges.

A MEMS includes a substrate having a cavity, and a moveable element arranged in the cavity, the moveable element including a first electrode, a second electrode and a third electrode that is arranged between the first electrode and the second electrode and is fixed in an electrically insulated manner from the same at discrete areas. The moveable element is configured to perform a movement along a movement direction in a substrate plan in response to an electric potential between the first electrode and the third electrode or in response to an electric potential between the second electrode and the third electrode. A dimension of the third electrode perpendicular to the substrate plane is lower than a dimension of the first electrode and a dimension of the second electrode perpendicular to the substrate plane.

The present disclosure provides a MEMS device. The MEMS device includes: a substrate; a recess, disposed in the substrate; a movable portion, hollowly supported in the recess; and an isolation joint, inserted into a predetermined position of the movable portion and electrically insulating both sides of the movable portion. A shortest distance between a bottom of the recess and the movable portion is less than a distance between the bottom of the recess and the isolation joint.

A microelectromechanical sensor device having a sensing structure with: a substrate; an inertial mass, suspended above the substrate and elastically coupled to a rotor anchoring structure by elastic coupling elements, to perform at least one inertial movement due to a quantity to be sensed; first sensing electrodes, integrally coupled to the inertial mass to be movable due to the inertial movement; and second sensing electrodes, fixed with respect to the quantity to be sensed, facing and capacitively coupled to the first sensing electrodes to form sensing capacitances having a value that is indicative of the quantity to be sensed. The second sensing electrodes are arranged in a suspended manner above the substrate and a compensation structure is configured to move the second sensing electrodes with respect to the first sensing electrodes and vary a facing distance thereof, in the absence of the quantity to be sensed, in order to compensate for a native offset of the sensing structure.

Tunable MEMS etalon devices comprising: a front minor and a back mirror, the front and back mirrors separated in an initial pre-stressed un-actuated etalon state by a gap having a pre-stressed un-actuated gap size determined by a back stopper structure in physical contact with the front mirror and back mirrors, the etalon configured to assume at least one actuated state in which the gap has an actuated gap size gap greater than the pre-stressed un-actuated gap size; an anchor structure, a frame structure fixedly coupled to the front mirror at a first surface thereof that faces incoming light, and a flexure structure attached to the anchor structure and to the frame structure but not attached to the front mirror, and a spacer structure separating the anchor structure from the back mirror, and wherein the front mirror and the spacer structure are formed in a same single glass layer.

A modification to rough polysilicon using ion implantation and silicide is provided herein. A method can comprise depositing a hard mask on a single crystal silicon, patterning the hard mask, and depositing metal on the single crystal silicon. The method also can comprise forming silicide based on causing the metal to react with exposed silicon of the single crystal silicon. Further, the method can comprise removing unreacted metal and stripping the hard mask from the single crystal silicon. Another method can comprise forming a MEMS layer based on fusion bonding a handle MEMS with a device layer. The method also can comprise implanting rough polysilicon on the device layer. Implanting the rough polysilicon can comprise performing ion implantation of the rough polysilicon. Further, the method can comprise performing high temperature annealing. The high temperature can comprise a temperature in a range between around 700 and 1100 degrees Celsius.

A capacitive transducer includes a substrate having an opening in a surface thereof, a back plate facing the opening in the substrate, a vibration electrode film facing the back plate across a space, the vibration electrode film being deformable to have a deformation converted into a change in capacitance between the vibration electrode film and the back plate, the vibration electrode film having a through-hole as a pressure relief hole, and a protrusion integral with and formed from the same member as the back plate, the protrusion being placeable in the pressure relief hole before the vibration electrode film deforms. The protrusion and the pressure relief hole have a gap therebetween defining an airflow channel as a pressure relief channel.

A MEMS device includes a membrane and a counter electrode structure spaced apart from the membrane. The counter electrode structure includes a non-planar conductive layer. The MEMS device includes an air gap between the membrane and the counter electrode structure. The air gap has a non-uniform thickness.