Provided is a MEMS device including a substrate that has a first principal surface and a second principal surface facing the first principal surface, and in which a cavity recessed from the first principal surface side to the second principal surface side is disposed, and a MEMS electrode that is disposed within the cavity, and that is separated from a bottom surface of the cavity to the first principal surface side. The MEMS includes a movable electrode finger, a fixed electrode finger, a beam portion, and an electrode portion. The electrode portion includes a first electrode finger and a second electrode finger.

A MEMS device includes a substrate and a MEMS electrode. The MEMS electrode includes a movable electrode finger relatively movable with respect to the substrate, a fixed electrode finger disposed at an interval from the movable electrode finger, and a beam portion cantilevered on the substrate and connecting the fixed electrode finger to the substrate. The beam portion includes a first portion having a first thermal expansion coefficient and a second portion disposed adjacent to the first portion and having a second thermal expansion coefficient different from the first thermal expansion coefficient. The beam portion is deformed due to a difference between thermal stress generated in the first portion and thermal stress generated in the second portion, and the interval is narrowed due to deformation of the beam portion as compared with an interval formed before the deformation of the beam portion.

Deep via technology is used to construct an integrated silicon cantilever and cavity oriented in a vertical plane which creates an electrostatically-switched MEMS switch in a small wafer area. Another embodiment is a small wafer area electrostatically-switched, vertical-cantilever MEMS switch wherein the switch cavity is etched within a volume defined by walls grown internally within a silicon substrate using through vias.

Deep via technology is used to construct an integrated silicon cantilever and cavity oriented in a vertical plane which creates an electrostatically-switched MEMS switch in a small wafer area. Another embodiment is a small wafer area electrostatically-switched, vertical-cantilever MEMS switch wherein the switch cavity is etched within a volume defined by walls grown internally within a silicon substrate using through vias.

Deep via technology is used to construct an integrated silicon cantilever and cavity oriented in a vertical plane which creates an electrostatically-switched MEMS switch in a small wafer area. Another embodiment is a small wafer area electrostatically-switched, vertical-cantilever MEMS switch wherein the switch cavity is etched within a volume defined by walls grown internally within a silicon substrate using through vias.

A method and system for a sensor system of a device is disclosed. The sensor system includes a first MEMS sensor (FMEMS), a second MEMS sensor (SMEMS) and a signal processor (SP). An excitation is imparted to the device along a first axis (FA). The FMEMS has a first primary sense axis (FPSA), moves in response to a component of the excitation along the FA aligned with the FPSA and outputs a first signal proportional to an excitation along the FPSA. The SMEMS has a second primary sense axis (SPSA), moves in response to a component of the excitation along the FA aligned with the SPSA and outputs a second signal proportional to an excitation along the SPSA. The SP combines the first signal and the second signal to output a third signal proportional to the excitation along the FA. The FA, the FPSA and the SPSA have different orientations.

Deep via technology is used to construct an integrated silicon cantilever and cavity oriented in a vertical plane which creates an electrostatically-switched MEMS switch in a small wafer area. Another embodiment is a small wafer area electrostatically-switched, vertical-cantilever MEMS switch wherein the switch cavity is etched within a volume defined by walls grown internally within a silicon substrate using through vias.

A MEMS device includes a mass system capable of undergoing oscillatory drive motion along a drive axis and oscillatory sense motion along a sense axis perpendicular to the drive axis. A quadrature correction unit includes a fixed electrode and a movable electrode coupled to the movable mass system, each being lengthwise oriented along the drive axis. The movable electrode is spaced apart from the fixed electrode by a gap having an initial width. At least one of the fixed and movable electrodes includes an extrusion region extending toward the other of the fixed and movable electrodes. The movable electrode undergoes oscillatory motion with the mass system such that the extrusion region is periodically spaced apart from the other of the fixed and movable electrodes by a gap exhibiting a second width that is less than the first width thereby enabling capacitance enhancement between the electrodes.

A MEMS die comprises a substrate having an opening, a diaphragm attached to the substrate around a periphery of the opening so as to cover the opening, the diaphragm having an aperture, and a backplate separated from the diaphragm and disposed on a side of the diaphragm opposite the substrate, the backplate comprising a plug that extends toward the aperture from an attached end to a free end. In an embodiment the free end of the plug has a smaller area than the aperture, and the plug is separated from the diaphragm by a gap, wherein a size of the gap determines a level of fluid communication across the diaphragm through the aperture.

Disclosed is a variable inductor or inductor module with a varying inductance, wherein the variable inductor or inductor module changes inductor ring spacing and the distance between the inductor and a substrate using a MEMS driver, thereby enabling variances in the inductance.