Patent classifications
B81B3/0056
MEMS device having variable gap width and method of manufacture
A MEMS device (40) includes a base structure (42) and a microstructure (44) suspended above the structure (42). The base structure (42) includes an oxide layer (50) formed on a substrate (48), a structural layer (54) formed on the oxide layer (50), and an insulating layer (56) formed over the structural layer (54). A sacrificial layer (112) is formed overlying the base structure (42), and the microstructure (44) is formed in another structural layer (116) over the sacrificial layer (112). Methodology (90) entails removing the sacrificial layer (112) and a portion of the oxide layer (50) to release the microstructure (44) and to expose a top surface (52) of the substrate (48). Following removal, a width (86) of a gap (80) produced between the microstructure (44) and the top surface (52) is greater than a width (88) of a gap (84) produced between the microstructure (44) and the structural layer (54).
MEMS CANTILEVER-ENCLOSURE SPACING
A microphone device includes a substrate, a microelectromechanical system (MEMS) transducer supported by the substrate, the MEMS transducer including a cantilever, the cantilever having a length, and an enclosure structure that encapsulates the MEMS transducer. A spacing between the cantilever and the enclosure structure is greater than the length of the MEMS transducer.
Micromechanical component for a sensor or microphone device
A micromechanical component for a sensor or microphone device, including a substrate, a frame structure, which is situated on the substrate surface and/or at least one intermediate layer, and a diaphragm, which spans an inner volume, which is at least partially framed by the frame structure. The micromechanical component includes a bending beam structure, which is situated in the inner volume and includes at least one anchoring area, which is attached to the frame structure, to the substrate surface and/or to the at least one intermediate layer, and at least one self-supporting area, which is connected via at least one coupling structure to the diaphragm inner side of the diaphragm in such a way that the at least one self-supporting area is bendable by way of a warping of the diaphragm.
Laminated structure and method of manufacturing laminated structure
A laminated structure includes a frame body having a first surface and a second surface facing in mutually opposite directions in a thickness direction, the frame body including a film body supported by the frame body and a hollow portion opening at the second surface and being located between the film body and the second surface; and a lid body attached to the frame body, including cavity located on the film body and an opening which communicates with the cavity and being formed at a positon at which at least a part of the film body is exposed to an external space of the laminated structure. The lid body includes a groove portion formed in a surface (a back surface) of the lid body facing the frame body, and the cavity and the external space of the laminated structure communicate with each other through the groove portion.
MEMS WITH ADJUSTED SEMICONDUCTOR BEHAVIOR
An MEMS has a movable element and a drive device having a first doped semiconductor electrode of the movable element and a second doped semiconductor electrode which is arranged opposite to the first semiconductor electrode and configured to generate while generating a first change zone of charge carriers in the first semiconductor electrode and a second change zone of charge carriers in the second semiconductor electrode.
Microelectromechanical sensor device with active offset compensation
A microelectromechanical sensor device having a sensing structure with: a substrate; an inertial mass, suspended above the substrate and elastically coupled to a rotor anchoring structure by elastic coupling elements, to perform at least one inertial movement due to a quantity to be sensed; first sensing electrodes, integrally coupled to the inertial mass to be movable due to the inertial movement; and second sensing electrodes, fixed with respect to the quantity to be sensed, facing and capacitively coupled to the first sensing electrodes to form sensing capacitances having a value that is indicative of the quantity to be sensed. The second sensing electrodes are arranged in a suspended manner above the substrate and a compensation structure is configured to move the second sensing electrodes with respect to the first sensing electrodes and vary a facing distance thereof, in the absence of the quantity to be sensed, in order to compensate for a native offset of the sensing structure.