A sensor device includes a first and second Micro-Electro-Mechanical (MEM) structures. The first MEM structure includes a first heating element on a first layer of the first MEM structure. The first heating element includes an input adapted to receive an input signal. The first MEM structure also includes a first temperature sensing element on a second layer of the first MEM structure. The second MEM structure includes a second heating element on a first layer of the second MEM structure and a second temperature sensing element on a second layer of the second MEM structure. An output circuit has a first input coupled to the first temperature sensing element and a second input coupled to the second temperature sensing element.

In a non-limiting embodiment, a MEMS device may include a substrate having a device stopper. The device stopper may be integral to the substrate and formed of the substrate material. A thermal dielectric isolation layer may be arranged over the device stopper and the substrate. A device cavity may extend through the substrate and the thermal dielectric isolation layer. The thermal dielectric isolation layer and the device stopper at least partially surround the device cavity. An active device layer may be arranged over the thermal dielectric isolation layer and the device cavity.

A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO.sub.2-patterned portion, and a second Pt-patterned portion on the second TiO.sub.2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO.sub.2 layer formed on the IMD layer, a first TiO.sub.2-patterned portion and a first Pt-patterned portion.

The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process.

A micro-electromechanical system (MEMS) device includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer coupled to the polycrystalline ceramic core, a conductive layer coupled to the first adhesion layer, a second adhesion layer coupled to the conductive layer, and a barrier layer coupled to the second adhesion layer. The support structure defines a cavity. The MEMS device also includes a III-V membrane coupled to a portion of the support structure. A portion of the III-V membrane is suspended over the cavity defined by the support structure and defines a MEMS structure.

The present invention relates to microelectromechanical systems (MEMS), and more specifically to an anchor structure for anchoring MEMS components within a MEMS device. The anchor points for rotor and stator components of the device are arranged such that the anchor points are arranged along and overlap a common axis.

A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.

A micromechanical sensor. The sensor includes a substrate, a cap element situated on the substrate, at least one seismic mass that is deflectable orthogonal to the cap element, an internal pressure that is lower by a defined amount relative to the surrounding environment prevailing inside a cavity, and a compensating element designed to provide a homogenization of a temperature gradient field in the cavity during operation of the micromechanical sensor.

A micro-electromechanical device includes a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for.

A method of manufacturing an electromechanical systems structure includes manufacturing sub-micron structural features. In some embodiments, the structural features are less than the lithographic limit of a lithography process.