A modification to rough polysilicon using ion implantation and silicide is provided herein. A method can comprise depositing a hard mask on a single crystal silicon, patterning the hard mask, and depositing metal on the single crystal silicon. The method also can comprise forming silicide based on causing the metal to react with exposed silicon of the single crystal silicon. Further, the method can comprise removing unreacted metal and stripping the hard mask from the single crystal silicon. Another method can comprise forming a MEMS layer based on fusion bonding a handle MEMS with a device layer. The method also can comprise implanting rough polysilicon on the device layer. Implanting the rough polysilicon can comprise performing ion implantation of the rough polysilicon. Further, the method can comprise performing high temperature annealing. The high temperature can comprise a temperature in a range between around 700 and 1100 degrees Celsius.

A sensor includes a deformable membrane that deflects in response to a stimuli. The sensor further includes a capacitive element coupled to the deformable membrane. The capacitive element is disposed within an enclosed cavity of the sensor. The capacitive element changes capacitance in response to the deformable membrane deflecting. The capacitive element comprises a getter material for collecting gas molecules within the enclosed cavity.

A photo-patterned fluorocarbon monolayer directly grafted to Si surface atoms provides anti-wetting performance at controlled locations, wherein the Si surface oxide is etched and reacted with fluorocarbon chains with a terminal CC double bond, resulting in SiC surface. As the direct SiC linkages are chemically robust, and much more resistant to decomposition than SiOC bonds, the resulting surface does not suffer from the shortcomings of current MEMS dispensers.

A method of producing a semiconductor device includes providing a carrier structure having a semiconductor substrate; applying or introducing a precursor substance onto or into the carrier structure, treating the precursor substance for producing a porous matrix structure; introducing a functionalization substance into the porous matrix structure.

Methods for depositing a measured amount of a species in a sealed cavity. In one example, a method for depositing molecules in a sealed cavity includes depositing a selected number of microcapsules in a cavity. Each of the microcapsules contains a predetermined amount of a first fluid. The cavity is sealed after the microcapsules are deposited. After the cavity is sealed the microcapsules are ruptured to release molecules of the first fluid into the cavity.

A method of producing a semiconductor device includes providing a carrier structure having a semiconductor substrate; applying or introducing a precursor substance onto or into the carrier structure, treating the precursor substance for producing a porous matrix structure; introducing a functionalization substance into the porous matrix structure.

A MEMS transducer system includes a MEMS transducer device for sensing at least one of pressure signal or acoustic signal. The MEMS transducer device includes first and second diaphragms. Formed between the diaphragms are a spacer, plate capacitor elements, and electrode elements. The plate capacitor elements are coupled to the diaphragms via the spacer. An optional member may be disposed within the spacer. The distal ends of the electrode elements are coupled to a structure such as insulator element. An optional oxides may be formed within the plate capacitor elements. Pressure sensing electrode formed between the diaphragms may be coupled to the insulator element.

A modification to rough polysilicon using ion implantation and silicide is provided herein. A method can comprise depositing a hard mask on a single crystal silicon, patterning the hard mask, and depositing metal on the single crystal silicon. The method also can comprise forming silicide based on causing the metal to react with exposed silicon of the single crystal silicon. Further, the method can comprise removing unreacted metal and stripping the hard mask from the single crystal silicon. Another method can comprise forming a MEMS layer based on fusion bonding a handle MEMS with a device layer. The method also can comprise implanting rough polysilicon on the device layer. Implanting the rough polysilicon can comprise performing ion implantation of the rough polysilicon. Further, the method can comprise performing high temperature annealing. The high temperature can comprise a temperature in a range between around 700 and 1100 degrees Celsius.

A photo-patterned fluorocarbon monolayer directly grafted to Si surface atoms provides anti-wetting performance at controlled locations, wherein the Si surface oxide is etched and reacted with fluorocarbon chains with a terminal CC double bond, resulting in SiC surface. As the direct SiC linkages are chemically robust, and much more resistant to decomposition than SiOC bonds, the resulting surface does not suffer from the shortcomings of current MEMS dispensers.

The invention relates generally to use of a silicon oxynitride film which exhibits desirable physical and chemical properties; superiority in adhesion to metals including noble metals and other metals, transparent conductive oxides, and semiconductor materials compared to silicon dioxide and silicon nitride; is wet-etchable, dry-etchable, or both; and operates as a high-performance overcoat barrier dielectric. The silicon oxynitride film meets performance requirements via a process that does not require an adhesion layer for deposition, and does not contaminate, obscure, or damage the device through incorporation or processing of additional adhesion layers.