Electromechanical device structures are provided, as well as methods for forming them. The device structures incorporate at least a first and second substrate separated by an interface material layer, where the first substrate comprises an anchor material structure and at least one suspended material structure, optionally a spring material structure, and optionally an electrostatic sense electrode. The device structures may be formed by methods that include providing an interface material layer on one or both of the first and second substrates, bonding the interface materials to the opposing first or second substrate or to the other interface material layer, followed by forming the suspended material structure by etching.

A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.

Micro-electro-mechanical system (MEMS) devices are disclosed, including a MEMS device comprising a semiconductor die including integrated circuitry, a structure mounted on the semiconductor die and covering at least a portion of the circuitry, the structure defining a space between the structure and the at least a portion of the circuitry, and a transducer including a membrane, the transducer located outside of the space.

A microphone device includes a housing including a substrate having a first surface and a cover disposed over the substrate, the housing including a sound port between the interior of the housing and the exterior of the housing. The device also includes a microelectromechanical systems (MEMS) transducer mounted on the substrate and an integrated circuit (IC) mounted on the substrate. The MEMS transducer of the device is electrically connected to the IC, and the IC of the device is electrically connected to a conductor on the substrate. An encapsulating material covers the IC. And an encapsulating material confinement structure is disposed between the MEMS transducer and the IC, wherein the encapsulating material confinement structure at least partially confines the encapsulating material around the IC.

A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.

Methods and apparatus for preventing solar damage, and other heat-related damage, to uncooled microbolometer pixels. In certain examples, a thermochroic membrane that becomes highly reflective at temperatures above a certain threshold is applied over at least some of the microbolometer pixels to prevent the pixels from being damaged by excessive heat.

A MEMS resonator is equipped with a substrate, a moving structure suspended above the substrate in a horizontal plane formed by first and second axes, having first and second arms, parallel to one another and extending along the second axis, coupled at their respective ends by first and second transverse joining elements, forming an internal window. A first electrode structure is positioned outside the window and capacitively coupled to the moving structure. A second electrode structure is positioned inside the window. One of the first and second electrode structures causes an oscillatory movement of the flexing arms in opposite directions along the first horizontal axis at a resonance frequency, and the other electrode structure has a function of detecting the oscillation. A suspension structure has a suspension arm in the window. An attachment arrangement is coupled to the suspension element centrally in the window, near the second electrode structure.

A method includes depositing a silicon layer over a first oxide layer that overlays a first silicon substrate. The method further includes depositing a second oxide layer over the silicon layer to form a composite substrate. The composite substrate is bonded to a second silicon substrate to form a micro-electro-mechanical system (MEMS) substrate. Holes within the second silicon substrate are formed by reaching the second oxide layer of the composite substrate. The method further includes removing a portion of the second oxide layer through the holes to release MEMS features. The MEMS substrate may be bonded to a CMOS substrate.

A MEMS pressure sensor includes a first plate with a hole on a diaphragm bonded to the first plate around its rim with the diaphragm positioned over the hole. An isolation frame is bonded to the diaphragm and a second plate with a pillar is bonded to the isolation frame around its rim to form a cavity such that the end of the pillar in the cavity is proximate a surface of the diaphragm. The diaphragm and second plate form a capacitive sensor which changes output upon deflection of the diaphragm relative to the second plate.

A semiconductor differential pressure sensor element is such that as strain sensitive elements are disposed only inside a diaphragm, and strain relaxation grooves are provided along the diaphragm, it is difficult for thermal stress caused by expansion or contraction of a case to propagate to the strain sensitive elements, thus suppressing characteristic fluctuations resulting from a change in external temperature. Also, as a configuration is such that a sacrificial column is provided inside a depressed portion, and that the diaphragm is held by the sacrificial column in a diaphragm formation step which thins a second semiconductor substrate and a functional element formation step which repeatedly implements a cleaning step, breakage of the diaphragm can be prevented, thus achieving a significant improvement in yield.