A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.

An inertial sensor and a method therefor are provided. The inertia sensor includes a first substrate; a first insulation layer stacked on the first substrate; a first conducting layer stacked on the first insulation layer and including first openings; stoppers corresponding to the first openings and embedded into the first openings to close the first openings; a second insulation layer stacked on the first conducting layer and including a cavity; a second conducting layer stacked on the second insulation layer and including second openings; a first bonding structure stacked on the second conducting layer; a second substrate; and a second bonding structure stacked on the second substrate, the second bonding structure and the first bonding structure being bonded together to define a closed space therebetween. Thus, a structure thereof remains stable, thereby minimizing the feature size and bringing more room of device performance improvement.

A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.

A method for forming a micro-electro mechanical system (MEMS) device is provided. The method includes forming a first dielectric layer over a semiconductor layer and forming a blocking layer over the first dielectric layer. The method also includes bonding a CMOS substrate with the blocking layer, and the CMOS substrate includes a second dielectric layer, and the blocking layer is configured to block gas coming from the second dielectric layer. The method further includes partially removing the first dielectric layer to form a cavity between the semiconductor layer and the blocking layer. A portion of the semiconductor layer above the cavity becomes a movable element. In addition, the method includes sealing the cavity such that a closed chamber is formed to surround the movable element.

Systems and methods for packaging a MEMS device to measure the in-stream pressure within a pipe are provided. Embodiments herein avoid the use of a metal housing enclosing the MEMS device or die pad of the MEMS device. Instead, the MEMS device is mounted directly to the pipe using a ceramic carrier. In preferred embodiments, the ceramic carrier is soldered, brazed, welded or eutectic bonded to the metal pipe.

A microelectromechanical sensor (MEMS) package includes a gyroscope and an accelerometer. The gyroscope is located within a low-pressure cavity that is sealed from an external pressure. The accelerometer is located within a cavity, and the seal for the accelerometer cavity is entirely within the gyroscope cavity. Under normal operating conditions, the accelerometer seal holds the accelerometer cavity at a higher pressure than the pressure of the enclosing gyroscope cavity. In the event that one of the gyroscope seal or the accelerometer seal is broken, the gyroscope senses the change in pressure.

A method for manufacturing a micromechanical component including a substrate, and a cap connected to the substrate, the cap, together with the substrate, encloses a cavity, a pressure prevailing and a gas mixture having a first chemical composition being enclosed in the cavity. An access opening connecting the cavity to surroundings of the micromechanical component is formed in the substrate or in the cap. The pressure and/or the chemical composition is adjusted in the cavity. The access opening is sealed by introducing energy or heat into an absorbing part of the substrate or the cap with the aid of a laser. A first crystalline, amorphous, nanocrystalline, or polycrystalline layer is deposited or grown on a surface of the substrate or of the cap, and/or a substrate including a second crystalline, amorphous, nanocrystalline, and/or polycrystalline layer, and/or a cap including the second crystalline, amorphous, nanocrystalline, and/or polycrystalline layer is provided.

A method is provided for manufacturing a micromechanical component including a substrate and a cap connected to the substrate and together with the substrate enclosing a first cavity, a first pressure prevailing and a first gas mixture with a first chemical composition being enclosed in the first cavity. An access opening, connecting the first cavity to surroundings of the micromechanical component, is formed in the substrate or in the cap. The first pressure and/or the first chemical composition are adjusted in the first cavity. The access opening is sealed by introducing energy and heat into an absorbing part of the substrate or the cap with the aid of a laser. A recess is formed in a surface of the substrate or of the cap facing away from the first cavity in the area of the access opening for reducing local stresses occurring at a sealed access opening.

After forming a microelectromechanical-system (MEMS) resonator within a silicon-on-insulator (SOI) wafer, a complementary metal oxide semiconductor (CMOS) cover wafer is bonded to the SOI wafer via one or more eutectic solder bonds that implement respective paths of electrical conductivity between the two wafers and hermetically seal the MEMS resonator within a chamber.

Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a CMOS substrate and a MEMS substrate bonded with the CMOS substrate. The CMOS substrate includes a semiconductor substrate, a first dielectric layer formed over the semiconductor substrate, and a plurality of conductive pads formed in the first dielectric layer. The MEMS substrate includes a semiconductor layer having a movable element and a second dielectric layer formed between the semiconductor layer and the CMOS substrate. The MEMS substrate also includes a closed chamber surrounding the movable element. The MEMS substrate further includes a blocking layer formed between the closed chamber and the first dielectric layer of the CMOS substrate. The blocking layer is configured to block gas, coming from the first dielectric layer, from entering the closed chamber.