Caging structures are disclosed for caging or otherwise reducing the mechanical shock pulse experienced by MEMS device beam structures during events that may cause mechanical shock to the MEMS device. The caging structures at least partially surround the beam such that they limit the motion of the beam in a direction perpendicular to the beam's longitudinal axis, thereby reducing stress on the beam during a mechanical shock event. The caging structures may be used in combination with mechanical shock-resistant beams.

A MEMS chip package is provided with a removable cover to allow non-destructive testing. The MEMS package has a container (with walls and a bottom) and a cover. The cover has a glass pane, and is secured to the MEMS package with an elastomeric gasket mounted between the walls of the MEMS package and the cover. A number of attachment mechanisms secure the cover to the MEMS package.

In accordance with an example embodiment of this disclosure, a micro-electro-mechanical system (MEMS) device comprises a substrate, a CMOS die, and a MEMS die, each of which comprises a top side and a bottom side. The bottom side of the CMOS die is coupled to the top side of the substrate, and the MEMS die is coupled to the top side of the CMOS die, and there is a cavity positioned between the CMOS die and the substrate. The cavity may be sealed by a sealing substance, and may be filled with a filler substance (e.g., an adhesive) that is different than the sealing substance (e.g., a gaseous or non-gaseous substance). The cavity may be fully or partially surrounded by one or more downward-protruding portions of the CMOS die and/or one or more upward-protruding portions of the substrate.

The present application relates to structures for supporting mechanical, electrical and/or electromechanical components, devices and/or systems and to methods of fabricating such structures. The application describes a primary die comprising an aperture extending through the die. The aperture is suitable for receiving a secondary die. A secondary die may be provided within the aperture of the primary die.

A microelectromechanical system (MEMS) device may include a MEMS structure above a first substrate. The MEMS structure comprising a central static element, a movable element, and an outer static element. A portion of bonding material between the central static element and the first substrate. A second substrate above the MEMS structure, with a portion of a dielectric layer between the central static element and the second substrate. A supporting post comprises the portion of bonding material, the central static element, and the portion of dielectric material.

A method for bonding two substrates is described, comprising providing a first and a second silicon substrate, providing a raised feature on at least one of the first and the second silicon substrate, forming a layer of gold on the first and the second silicon substrates, and pressing the first substrate against the second substrate, to form a thermocompression bond around the raised feature. The high initial pressure caused by the raised feature on the opposing surface provides for a hermetic bond without fracture of the raised feature, while the complete embedding of the raised feature into the opposing surface allows for the two bonding planes to come into contact. This large contact area provides for high strength.

A sensor device includes: a sensor portion having a movable thin film and a detection element configured to output a signal corresponding to displacement of the movable thin film; a frame portion disposed to surround an outside of the sensor portion; a spring portion provided between the frame portion and the sensor portion; and a circuit board including a circuit configured to process the signal output from the detection element, in which the frame portion is laminated on the circuit board, and the sensor portion is cantilevered from the frame portion by the spring portion such that a gap is formed between the sensor portion and the circuit board.

In an electronic component with a component housing and an integrated circuit with sensor function which is accommodated in a plastic electronic housing, wherein the component housing has a cutaway in the region of the circuit with sensor function so that the integrated circuit can perform its function as a sensor through the cutaways, the component housing lies flush with the edge of the cutaway on the electronic housing and is joined in sealing manner with an adhesive bond to the electronic housing. The component housing has an approximately vertical section on the edge of the cutaways, which section extends along the side of the electronic housing. A horizontal section is also present and projects horizontally over the electronic housing.

An inertial sensor includes oscillating-type angular velocity sensing element (32), IC (34) for processing signals supplied from angular velocity sensing element (32), capacitor (36) for processing signals, and package (38) for accommodating angular velocity sensing element (32), IC (34), capacitor (36). Element (32) and IC (34) are housed in package (38) via a vibration isolator, which is formed of TAB tape (46), plate (40) on which IC (34) is placed, where angular velocity sensing element (32) is layered on IC (34), and outer frame (44) placed outside and separately from plate (40) and yet coupled to plate (40) via wiring pattern (42).

System and method for forming an ALD assembly on a surface of a microelectromechanical system (MEMS) device comprises a substrate having a surface and the ALD assembly is at least partially disposed on the surface of the substrate, wherein the ALD assembly is at least one of hydrophobic and hydrophilic properties. The ALD layer further includes a first ALD and a second ALD. On the surface of the substrate, the first ALD is deposited in a first deposition cycle and the second ALD is deposited in a second deposition cycle. The ALD assembly further comprises a seed layer formed using atomic layer deposition and the ALD layer is at least partially disposed on the seed layer. In one example, the seed layer is formed from alumina (Al.sub.2O.sub.3) and the ALD layer is formed from platinum (Pt). In alternate embodiment, on the seed layer, the first ALD is deposited in a first deposition cycle and the second ALD is deposited in a subsequent deposition cycle. The substrate is formed from silicon dioxide (SiO.sub.2).