Patent classifications
B81B7/0064
A PACKAGED CIRCUIT SYSTEM STRUCTURE
A packaged circuit system structure with circuit elements embedded into a bulk material. At least one of the embedded circuit elements forms a dual coupling that includes an electrical connection to a signal ground potential on one side of the structure and an electrical connection to a conductive layer on the other side of the structure. The conductive layer extends over at least one embedded circuit element that does not form a dual coupling, and thereby provides an effective EMI shielding for it.
CMOS-MEMS integrated device without standoff in MEMS
An apparatus includes a MEMS wafer with a device layer and a handle substrate bonded to the device layer. The apparatus also includes a CMOS wafer including an oxide layer, and a passivation layer overlying the oxide layer. A bonding electrode overlies the passivation layer and a bump stop electrode overlies the passivation layer. A eutectic bond is between a first bonding metal on the bonding electrode and a second bonding metal on the MEMS wafer. A sensing electrode is positioned adjacent to the bump stop electrode and the bonding electrode. A sensing gap is positioned between the sensing electrode and the device layer, wherein the sensing gap is greater than a bump stop gap positioned between the bump stop electrode and the device layer.
INERTIAL SENSOR, ELECTRONIC APPARATUS, AND VEHICLE
An inertial sensor includes a substrate, a first inertial sensor element provided on the substrate, a lid bonded to the substrate so as to cover the first inertial sensor element, a first drive signal terminal that is provided outside the lid and is for a drive signal to be applied to the first inertial sensor element, and a first detection signal terminal that is provided outside the lid and is for a detection signal output from the first inertial sensor element, in which, in plan view of the substrate, the first drive signal terminal and the first detection signal terminal are provided with the lid interposed therebetween.
MEMS package
A package includes a support structure having an electrically insulating material, a microelectromechanical system (MEMS) component, a cover structure having an electrically insulating material and mounted on the support structure for at least partially covering the MEMS component, and an electronic component embedded in one of the support structure and the cover structure. At least one of the support structure and the cover structure has or provides an electrically conductive contact structure.
Microphone and pressure sensor package and method of producing the microphone and pressure sensor package
The microphone and pressure sensor package comprises a carrier (1) with an opening (16), a microphone device (20) including a diaphragm (21) and a perforated back plate (22) arranged above the opening (16), an ASIC device (6), and a cover (9) forming a cavity (17) between the carrier (1) and the cover (9). The ASIC device (6) and the microphone device (20) are arranged in the cavity (17). A sensor element (7) provided for a pressure sensor is integrated in the ASIC device (6). The pressure outside the cavity (17) is transferred to the sensor element (7) through the opening (16), the diaphragm (21), and the back plate (22).
MEMS packaging
A package for a MEMS device, the package comprising a MEMS transducer within a chamber of the package; and a package substrate, wherein an upper surface of the package substrate defines at least part of a surface of the chamber; wherein the package substrate comprises a plurality of metal layers, the package substrate further comprising at least a part of a filter circuit for filtering RF signals, wherein a first metal layer is provided in a first plane of the substrate and wherein a resistor of the filter circuit is provided in a plane below the first plane.
MEMS device with movable stage
A MEMS device includes a substrate, at least one anchor disposed on the substrate, a movable stage, a sensing chip disposed on the movable stage, and at least one elastic member connected with the movable stage and the anchor. The movable stage includes at least one electrode and at least one conductive connecting layer. The sensing chip includes at least one electrical interconnection connected with the conductive connecting layer. The elastic member includes at least one first electrical channel, a second electrical channel and an electrical insulation layer disposed between the first electrical channel and the second electrical channel. The first electrical channel is electrically connected with the electrical interconnection, and the second electrical channel is electrically connected with the electrode.
WEARABLE INFRARED TEMPERATURE SENSING DEVICE
A wearable device includes a case and a far infrared temperature sensing device. The case has a first opening. The far infrared temperature sensing device is disposed inside the case of the wearable device. The far infrared temperature sensing device includes an assembly structure, a sensor chip, a filter structure, and a metal shielding structure. The assembly structure has an accommodating space and a top opening. The sensor chip is disposed in the accommodating space of the assembly structure. The filter structure is disposed above the sensor chip. The metal shielding structure is disposed above the sensor chip, and has a second opening to expose the filter structure. The first and second openings are communicated to cooperatively define a through hole.
MEMS DEVICE WITH MOVABLE STAGE
A MEMS device includes a substrate, at least one anchor disposed on the substrate, a movable stage, a sensing chip disposed on the movable stage, and at least one elastic member connected with the movable stage and the anchor. The movable stage includes at least one electrode and at least one conductive connecting layer. The sensing chip includes at least one electrical interconnection connected with the conductive connecting layer. The elastic member includes at least one first electrical channel, a second electrical channel and an electrical insulation layer disposed between the first electrical channel and the second electrical channel. The first electrical channel is electrically connected with the electrical interconnection, and the second electrical channel is electrically connected with the electrode.
Semiconductor device package including a wall and a grounding ring exposed from the wall
A semiconductor device package includes a carrier, a wall disposed on a top surface of the carrier, a cover, and a sensor element. The cover includes a portion protruding from a bottom surface of the cover, where the protruding portion of the cover contacts a top surface of the wall to define a space. The sensor element is positioned in the space.