Various three-dimensional devices that can be formed within the bulk of a semiconductor by photo-controlled selective etching are described herein. With more particularity, semiconductor devices that incorporate three-dimensional electrical vias, waveguides, or fluidic channels that are disposed within a semiconductor are described herein. In an exemplary embodiment, a three-dimensional interposer chip includes an electrical via, a waveguide, and a fluidic channel, wherein the via, the waveguide, and the fluidic channel are disposed within the body of a semiconductor element rather than being deposited on a surface. The three-dimensional interposer is usable to make electrical, optical, or fluidic connections between two or more devices.

Representative implementations of techniques and devices provide seals for sealing the joints of bonded microelectronic devices as well as bonded and sealed microelectronic assemblies. Seals are disposed at joined surfaces of stacked dies and wafers to seal the joined surfaces. The seals may be disposed at an exterior periphery of the bonded microelectronic devices or disposed within the periphery using the various techniques.

An electronic device includes a microelectromechanical system (MEMS) rectifier. The MEMS rectifier includes a mainboard and a sub-board. The mainboard has one or more radiofrequency (RF) inputs configured to receive an RF signal, and a first electrical contact. The sub-board is positioned parallel to the mainboard with a gap in-between, and has a thin film piezoelectric layer, a second electrical contact positioned opposite the first electrical contact, and a ground plane. The sub-board is configured to vibrate as the RF signal is received at the one or more RF inputs, and the thin film piezoelectric layer is configured to generate energy due to the vibration and piezoelectric properties of the thin film piezoelectric layer.

Representative implementations of techniques and devices provide seals for sealing the joints of bonded microelectronic devices as well as bonded and sealed microelectronic assemblies. Seals are disposed at joined surfaces of stacked dies and wafers to seal the joined surfaces. The seals may be disposed at an exterior periphery of the bonded microelectronic devices or disposed within the periphery using the various techniques.

The present disclosure relates to a MEMS inertial sensor device in a semiconductor chip package that includes an integrated circuit configured to process inertial sensor data. Preferred implementations utilize inertial sensors having different sensitivity ranges to adjust operation of dynamic system control such as motion and or attitude control of autonomous vehicles.

The semiconductor device includes a microelectromechanical system (MEMS) chip having a first main surface and a second main surface situated opposite the first main surface, a first glass-based substrate, on which the MEMS chip is arranged by its first main surface, and a second substrate, which is arranged on the second main surface of the MEMS chip, wherein the MEMS chip has a first recess connected to the surroundings by way of a plurality of perforation holes arranged in the first substrate.

Representative implementations of techniques and devices provide seals for sealing the joints of bonded microelectronic devices as well as bonded and sealed microelectronic assemblies. Seals are disposed at joined surfaces of stacked dies and wafers to seal the joined surfaces. The seals may be disposed at an exterior periphery of the bonded microelectronic devices or disposed within the periphery using the various techniques.

A method for producing a semiconductor device includes providing a microelectromechanical system (MEMS) chip having a first main surface and a second main surface situated opposite the first main surface, wherein the first main surface of the MEMS chip has a recess; providing a first glass-based substrate, wherein the first glass-based substrate has a plurality of perforation holes; applying the first main surface of the MEMS chip onto the first glass-based substrate in such a way that the recess becomes located over the plurality of perforation holes; providing a second substrate, which is arranged on the second main surface of the MEMS chip; and applying the second substrate to the second main surface of the MEMS chip.

An electronic device includes first and second semiconductor dies, the first semiconductor die having: a side extending in a first plane of orthogonal first and second directions; a sensor circuit along the side; and a conductive terminal extending outward from the side along an orthogonal third direction, and the second semiconductor die bonded to the first semiconductor die and having: a bottom side; a lateral side; and an insulation layer, the bottom side spaced apart from and facing the side of the first semiconductor die to form a protected chamber for the sensor circuit, the lateral side of the second semiconductor die spaced apart from the conductive terminal along the first direction, the insulation layer extending along the lateral side of the second semiconductor die, and the insulation layer spaced apart from and facing the conductive terminal along the first direction.

A sensor device includes a first sensor die arranged on a base element, a second sensor die arranged on the base element or on a first top surface of the first sensor die. The sensor device further includes an encapsulation material covering a part of the base element and surrounding the first sensor die and the second sensor die such that the first top surface is covered by the encapsulation material and at least a portion of a second top surface of the second sensor die is uncovered by the encapsulation material.