A method for packaging a MEMS device includes the following steps. A metal cap is provided that is partially anchored to a wafer comprising the MEMS device where at least one point between the cap and the wafer is unanchored, the metal cap arranged to at least substantially extend over the MEMS device. An electrical contact pad is electrically coupled to the MEMS device. A sealing layer is provided over the metal cap and the wafer such that the sealing layer seals a gap between an unanchored portion of the metal cap and the wafer to encapsulate the MEMS device, where the electrical contact pad and the metal cap include the same composition.

A low-profile packaging structure for a microelectromechanical-system (MEMS) resonator system includes an electrical lead having internal and external electrical contact surfaces at respective first and second heights within a cross-sectional profile of the packaging structure and a die-mounting surface at an intermediate height between the first and second heights. A resonator-control chip is mounted to the die-mounting surface of the electrical lead such that at least a portion of the resonator-control chip is disposed between the first and second heights and wire-bonded to the internal electrical contact surface of the electrical lead. A MEMS resonator chip is mounted to the resonator-control chip in a stacked die configuration and the MEMS resonator chip, resonator-control chip and internal electrical contact and die-mounting surfaces of the electrical lead are enclosed within a package enclosure that exposes the external electrical contact surface of the electrical lead at an external surface of the packaging structure.

A cover glass for a hermetic package includes a sealing material layer on one surface. The sealing material layer satisfies one of the following relationships (1) to (6) between its center line length (L.sub.CL) and average width (W.sub.A): (1) when L.sub.CL is 150 mm or more, W.sub.A is 0.20% or more of L.sub.CL; (2) when L.sub.CL is 100 mm or more and less than 150 mm, W.sub.A is 0.30% or more of L.sub.CL; (3) when L.sub.CL is 75 mm or more and less than 100 mm, W.sub.A is 0.35% or more of L.sub.CL; (4) when L.sub.CL is 50 mm or more and less than 75 mm, W.sub.A is 0.40% or more of L.sub.CL; (5) when L.sub.CL is 25 mm or more and less than 50 mm, W.sub.A is 0.60% or more of L.sub.CL; and (6) when L.sub.CL is less than 25 mm, W.sub.A is 0.90% or more of L.sub.CL.

A MEMS package has a MEMS chip, a package substrate, a dammed-seal part. The MEMS chip has an element substrate which a movable element is formed, the element substrate has an element hole-part which the movable element is arranged. The dammed-seal part has an annular dam-member which is formed on the element substrate so as to surround the element hole-part and a gel member. The gel member is formed by hardening of gel which is applied on the annular dam-member.

CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.

The present disclosure provides a terminal assembly structure of a MEMS microphone, including a signal let out board disposed at a terminal and a silicon microphone disposed on the signal let out board. The silicon microphone includes a housing, a substrate forming an accommodation space with the housing, an MEMS chip and a waterproof member. The substrate is configured with a sound inlet connected to the outside. The waterproof member is sandwiched between the MEMS chip and the substrate. A position where the signal let out board corresponds to the silicon microphone is configured with an accommodation hole. The housing is accommodated in the accommodation hole. The substrate abuts a surface of the signal let out board and covers the accommodation hole. A surface of the substrate where the housing is assembled, is provided with at least one pad electrically connected with the signal let out board.

A method includes: providing a first substrate on which a plurality of first semiconductor devices is formed; providing a second substrate on which a plurality of second semiconductor devices is formed; and coupling the first and second substrates by contacting respective dummy pads of the first and second substrates, wherein at least one of the dummy pads of the first and second substrates comprises plural peaks and valleys.

A composite wafer includes a first silicon die with a first top surface; and a polymer substrate with a top surface and a bottom surface. The silicon die is embedded in the polymer substrate such that the top surface of the substrate and the first top surface of the first silicon die are coplanar and the bottom surface of the polymer substrate is planar.

A semiconductor package structure includes an organic substrate having a first surface, a first recess depressed from the first surface, a first chip over the first surface and covering the first recess, thereby defining a first cavity enclosed by a back surface of the first chip and the first recess, and a second chip over the first chip. The first cavity is an air cavity or a vacuum cavity.

A non-magnetic hermetic package includes walls that surround an open cavity, with a generally planar non-magnetic and metallic seal ring disposed in a continuous loop around upper edges of the walls; a sensitive component that is bonded within the cavity; and a non-magnetic lid that is sealed to the seal ring to close the cavity by a metallic seal.