An electromechanical systems structure including: providing a stack, including a structural layer extending in a plane, a sidewall layer including a first portion lying in a plane parallel to the structural layer plane and a second portion lying in a plane transverse to the structural layer plane, an etch-stop layer, positioned between the sidewall layer and the structural layer, including an etch-selectivity different from an etch-selectivity of the structural layer and an etch-selectivity of the sidewall layer, and a mold comprising a wall parallel to the sidewall layer's second portion; etching the sidewall layer's first portion to expose the etch-stop layer; removing the mold; etching the etch-stop layer such that the sidewall layer's second portion masks a portion of the etch-stop layer; removing the sidewall layer's second portion; and etching the structural layer such that the portion of the etch-stop layer masks a portion of the structural layer.

A sealed package having a device disposed on a wafer structure and a lid structure boned to the device wafer. The device wafer includes: a substrate; a metal ring disposed on a surface portion of substrate around the device and a bonding material disposed on the metal ring. The metal ring extends laterally beyond at least one of an inner and outer edge of the bonding material. A first layer of the metal ring includes a stress relief buffer layer having a higher ductility than that of the surface portion of the substrate and a width greater than the width of the bonding material. The metal ring extends laterally beyond at least one of the inner and outer edges of the bonding material. The stress relief buffer layer has a coefficient of thermal expansion greater than the coefficient of expansion of the surface portion of the substrate and less than the coefficient of expansion of the bonding material.

A sensor device and an electronic apparatus by which downsizing and a reduction in costs can be achieved is provided. A sensor device according to an embodiment of the present technology includes a sensor element and a semiconductor element. The semiconductor element includes a first surface, a second surface, and a via-hole. The first surface includes a first terminal on which the sensor element is mounted and is an inactive surface. The second surface includes a second terminal for external connection and is an active surface. The via-hole electrically connects the first surface and the second surface to each other.

A method of manufacturing a device having a microelectronic component housed in a hermetically sealed vacuum housing, including forming a getter in said housing, pumping out and heating the device to degas elements housed in said housing, after said pumping, hermetically sealing the housing in fluxless fashion.

Further, each material forming the device likely to degas into the inner space is a mineral material, the getter is capable of substantially trapping hydrogen only and is inert to oxygen and/or to nitrogen and the heating and the sealing are performed at a temperature lower than 300 C.

A microelectromechanical systems (MEMS) package includes a substrate extending between a first pair of outer edges to define a length and a second pair of outer edges to define a width. A seal ring assembly is disposed on the substrate and includes at least one seal ring creating a first boundary point adjacent to at least one MEMS device and a second boundary point adjacent at least one of the outer edges. The package further includes a window lid on the seal ring assembly to define a seal gap containing the at least one MEMS device. The seal ring assembly anchors the window lid to the substrate at the second boundary point such that deflection of the window lid into the seal gap is reduced.

What is described is a method for producing a device having providing a substrate having an electrode which is exposed at a main side of the substrate. In addition, the method has forming a micro or nanostructure which has a spacer which is based on the electrode, wherein forming has the steps of: depositing a sacrificial layer on the main side, wherein the sacrificial layer has amorphous silicon or silicon dioxide; patterning a hole and/or trench into the sacrificial layer by means of a DRIE process; coating the sacrificial layer by means of ALD or MOCVD so that material of the nano or microstructure forms at the hole and/or trench, and removing the sacrificial layer.

A cell phone is provided having multiple sensors configured to detect and measure different parameters of interest. The cell phone includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The cell phone couples a first parameter to be measured directly to the direct sensor. Conversely, the cell phone can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the cell phone by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance.

An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.

A micro electro mechanical systems (MEMS) sensor packaging includes a first wafer having a readout integrated circuit (ROIC) formed thereon, a second wafer disposed corresponding to the first wafer and having a concave portion on one side thereof and a MEMS sensor prepared on the concave portion, joint solders formed along a surrounding of the MEMS sensor and sealing the MEMS sensor jointing the first and second wafers, and pad solders formed to electrically connect the ROIC circuit of the first wafer and the MEMS sensor of the second wafer. According to the present disclosure, in joining and packaging a wafer having the ROIC formed thereon and a wafer having the MEMS sensor formed thereon, the size of a package can be reduced and an electric signal can be stably provided by forming internally pad solders for electrically connecting the ROIC and the MEMS sensor.

A cover for an infrared detector and a method of fabricating the cover are disclosed. The cover comprises a wafer comprising a material such as silicon that transmits infrared radiation. The wafer has a first surface and a second surface opposite the first surface. An antireflective region is formed in the wafer to enhance transmission of infrared radiation through the cover. The antireflective region comprises a first plurality of antireflective elements such as moth-eyes formed in the first surface. The first plurality of antireflective elements are sized and shaped and arranged relative to one another to form a region of graded refractive index at the first surface so as to reduce the amount of infrared radiation reflected by the cover at the antireflective region. The cover comprises a wall extending from the first surface and surrounding the antireflective region. The wall comprises a plurality of layers of material deposited on the wafer so that, when the cover is bonded to a sensor substrate via the wall, a cavity is formed that encapsulates a sensor region of the sensor substrate. The depth of the cavity may be adjusted by depositing the plurality of layers of material with a combined thickness equivalent to the desired depth of the cavity. A second plurality of antireflective elements may be formed in the second surface to enhance the antireflective properties of the antireflective region.