Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one fixed electrode on a substrate. The method further includes forming a Micro-Electro-Mechanical System (MEMS) beam with a varying width dimension, as viewed from a top of the MEMS beam, over the at least one fixed electrode.

A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.

A capacitive MEMS microphone element is described which may be used optionally for detecting acoustic signals (microphone mode) or for detecting ultrasound signals in a defined frequency range (ultrasound mode). In the layered structure of the MEMS microphone element, at least two carrier elements for the two electrode sides of a capacitor system are formed one above the other and at a distance from one another for signal detection. At least one of the two carrier elements is sound pressure-sensitive and at least one of the two electrode sides includes at least two electrode segments which are electrically contactable independent of one another, which together with the at least one electrode of the other electrode side form partial capacitances which are independent of one another.

A method for sensor state detection of an environmental sensor for measuring at least one physical environmental variable of an ambient medium. The method includes providing the environmental sensor including a micromechanical sensor structure that can be deflected depending on the environmental variable, is exposed to the ambient medium and on which at least one interfering deposit entering via the ambient medium can be deposited and further comprising a converter unit for providing a measured variable depending on the deflection of the sensor structure, detecting an existing deposit of this type on the sensor structure by means of an excitation deviating from the environmental variable, wherein the excitation is a mechanical excitation acting externally on the environmental sensor, via which the deposit moves with an excitation movement on the sensor structure. An environmental sensor system and a mobile consumer device are also described.

Embodiments for constant charge or capacitance for capacitive micro-electro-mechanical system (MEMS) sensors are presented herein. A MEMS device comprises a sense element circuit comprising a bias resistance, a charge-pump, and a capacitive sense element comprising an electrode and a sense capacitance. The charge-pump generates, at a bias resistor electrically coupled to the electrode, a bias voltage that is inversely proportional to a capacitance value comprising a value of the sense capacitance to facilitate maintenance of a nominally constant charge on the electrode. A sensing circuit comprises an alternating current (AC) signal source that generates an AC signal at a defined frequency; and generates, based on the AC signal, an AC test voltage at a test capacitance that is electrically coupled to the electrode. The sense element circuit generates, based on the AC test voltage at the defined frequency, an output signal representing the value of the sense capacitance.

A microelectromechanical systems (MEMS) device comprises a MEMS die that comprises first and second diaphragms, a first plurality of electrodes each disposed on the first diaphragm, and a second plurality of electrodes each disposed on the second diaphragm. A fixed dielectric element is disposed between the first and second diaphragms and includes a plurality of apertures. The MEMS die further comprises a third plurality of electrodes, wherein each of the third plurality comprises a first conductive layer disposed on the first diaphragm proximate to at least one of the first plurality and a second conductive layer disposed on the second diaphragm proximate to at least one of the second plurality, and a conductive pin that extends through an aperture of the plurality of apertures and electrically connects the first conductive layer to the second conductive layer.

A microelectromechanical motion sensor device is described, provided with: a base substrate having a front surface with extension in a horizontal plane; and a sensing structure arranged above the base substrate, for sensing components of a motion quantity along respective sensing axes. The sensing structure is provided with: a housing element integrally coupled above the front surface of the base substrate and internally defining a cavity; a single mobile mass arranged inside the cavity; an elastic supporting arrangement arranged above the mobile mass, with main extension in a plane overlying the mobile mass to elastically support the mobile mass inside the cavity, so that it is suspended above the front surface of the base substrate and performs, due to inertial effect, a respective sensing movement in response to each of the components of the motion quantity; and a sensing electrode arrangement, capacitively coupled to the mobile mass for sensing the components of the motion quantity.

Embodiments for constant charge or capacitance for capacitive micro-electro-mechanical system (MEMS) sensors are presented herein. A MEMS device comprises a sense element circuit comprising a bias resistance, a charge-pump, and a capacitive sense element comprising an electrode and a sense capacitance. The charge-pump generates, at a bias resistor electrically coupled to the electrode, a bias voltage that is inversely proportional to a capacitance value comprising a value of the sense capacitance to facilitate maintenance of a nominally constant charge on the electrode. A sensing circuit comprises an alternating current (AC) signal source that generates an AC signal at a defined frequency; and generates, based on the AC signal, an AC test voltage at a test capacitance that is electrically coupled to the electrode. The sense element circuit generates, based on the AC test voltage at the defined frequency, an output signal representing the value of the sense capacitance.

Fully symmetric sensing structures for MEMS devices are disclosed herein. In certain embodiments, a MEMS sensor includes a proof mass that moves in a first direction. The proof mass includes moveable fingers that move with the proof mass. The MEMS sensor further includes fixed fingers that are fixed with respect to the moveable fingers, and the fixed fingers and moveable fingers serve to detect movement of the proof mass. For example, the moveable fingers and the fixed fingers can be interdigitated to form a comb finger set for sensing changes in capacitance arising from movement of the proof mass relative to a substrate. A layout of the fixed fingers is fully symmetric in at least the first direction.

A vibrating structure angular rate sensor includes a mount, a planar vibrating structure and a plurality of compliant supports extending between the mount and the planar vibrating structure to support the vibrating structure thereby allowing the planar vibrating structure to oscillate in its plane relative to the mount in response to an electrical excitation. A first set of transducers is arranged on the planar vibrating structure to apply, in use, an electrical excitation to the planar vibrating structure and to sense, in use, motion resulting from oscillation of the planar vibrating structure in its plane. A plurality of capacitive regions is fixed at a distance from the planar vibrating structure in its plane. The capacitive regions form a second set of transducers configured to apply, in use, an electrostatic force to the planar vibrating structure which induces a change in the frequency of oscillation of the planar vibrating structure.