Patent classifications
B81B2201/0228
MEMS COMPONENT
A layer material which is particularly suitable for the realization of self-supporting structural elements having an electrode in the layer structure of a MEMS component. The self-supporting structural element is at least partially made up of a silicon carbonitride (Si.sub.1-x-yC.sub.xN.sub.y)-based layer.
MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR
A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.
CMOS integrated moving-gate transducer with silicon as a functional layer
A method of fabricating a semiconductor device comprises forming a dielectric layer above a substrate, the dielectric layer including a fixed dielectric portion and a proof mass portion, forming a source region and a drain region in the substrate, forming a gate electrode in the proof mass portion, and releasing the proof mass portion, such that the proof mass portion is movable with respect to the fixed dielectric portion and the gate electrode is movable with the proof mass portion relative to the source region and the drain region.
SYSTEM AND METHOD FOR AN OVENIZED SILICON PLATFORM USING Si/SiO2 HYBRID SUPPORTS
The present invention generally relates to an ovenized platform and a fabrication process thereof. Specifically, the invention relates to an ovenized hybrid Si/SiO.sub.2 platform compatible with typical CMOS and MEMS fabrication processes and methods of its manufacture. Embodiments of the invention may include support arms, CMOS circuitry, temperature sensors, IMUs, and/or heaters among other elements.
Z-AXIS INERTIAL SENSOR WITH EXTENDED MOTION STOPS
A sensor includes a movable element adapted for rotational motion about a rotational axis due to acceleration along an axis perpendicular to a surface of a substrate. The movable element includes first and second ends, a first section having a first length between the rotational axis and the first end, and a second section having a second length between the rotational axis and the second end that is less than the first length. A motion stop extends from the second end of the second section. The first end of the first section includes a geometric stop region for contacting the surface of the substrate at a first distance away from the rotational axis. The motion stop for contacting the surface of the substrate at a second distance away from the rotational axis. The first and second distances facilitate symmetric stop performance between the geometric stop region and the motion stop.
Inertial sensor sampling with combined sense axes
A sensor system includes a transducer for sensing a physical stimulus along at least two orthogonal axes and an excitation circuit. The transducer includes a movable mass configured to react to the physical stimulus and multiple differential electrode pairs of electrodes. Each of the electrode pairs is configured to detect displacement of the movable mass along one of the orthogonal axes. The excitation circuit is connectable to the electrodes in various electrode connection configurations, with different polarity schemes, that enable excitation and sampling of each of the orthogonal axes during every sensing period. For each sensing period, a composite output signal is produced that includes the combined information sensed along each of the orthogonal axes. The individual sense signals for each orthogonal axis may be extracted from the composite output signals.
DEVICE, SYSTEM, METHOD, AND COMPUTER PRODUCT FOR DETECTING AND EVALUATING ENVIRONMENTAL QUANTITIES AND EVENTS WITH MODULAR APPROACH AND VARIABLE COMPLEXITY
A system for detecting and evaluating environmental quantities and events is formed by a detection and evaluation device and a mobile phone, connected through a wireless connection. The device is enclosed in a containment casing housing a support carrying a plurality of inertial sensors and environmental sensors. A processing unit is coupled to the inertial sensors and to the environmental sensors. A wireless connection unit, is coupled to the processing unit and a wired connection port, is coupled to the processing unit. A programming connector is coupled to the processing unit and is configured to couple to an external programming unit to receive programming instructions of the processing unit. A storage structure is coupled to the processing unit and a power-supply unit supplied power in the detection and evaluation device. The mobile phone stores an application, which enables a basicuse mode, an expert use mode, and an advanced use mode.
Mems device built using the BEOL metal layers of a solid state semiconductor process
A MEMS device formed using the materials of the BEOL of a CMOS process where a post-processing of vHF and post backing was applied to form the MEMS device and where a total size of the MEMS device is between 50 um and 150 um. The MEMS device may be implemented as an inertial sensor among other applications.
MICROMECHANICAL COMPONENT AND MANUFACTURING METHOD FOR A MICROMECHANICAL COMPONENT FOR A SENSOR OR MICROPHONE DEVICE
A micromechanical component for a sensor or microphone device. An electrode surface of a first electrode structure is aligned with a second electrode structure. A substructure of the first electrode structure is entirely made of at least one electrically conductive material. The electrode surface and an opposite surface of the first electrode structure are outer surfaces of the substructure. A stop structure protruding from the electrode surface towards the second electrode structure is formed on the first electrode structure. The first electrode structure includes an insulating region which extends from the electrode surface to the opposite surface of the first electrode structure. The stop structure is formed either as a projection of the at least one insulating region protruding from the electrode surface towards the second electrode structure or is bordered by the at least one insulating region.
Monolithically integrated multi-sensor device on a semiconductor substrate and method therefor
A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.