B81B2201/0228

MEMS DEVICE BUILT USING THE BEOL METAL LAYERS OF A SOLID STATE SEMICONDUCTOR PROCESS
20230406693 · 2023-12-21 · ·

A MEMS device formed using the materials of the BEOL of a CMOS process where a post-processing of vHF and post backing was applied to form the MEMS device and where a total size of the MEMS device is between 50 um and 150 um. The MEMS device may be implemented as an inertial sensor among other applications.

METHOD AND SYSTEM FOR DETECTING TIGHTNESS STATE OF BOLT OR NUT

The present invention discloses methods and systems for detecting the tightness state of a bolt or nut under inspection. At least one sensor is mounted on the bolt or nut. At least another sensor is mounted on a structure where the bolt or nut is mounted. Data of motion and/or orientation is acquired. A first angle of the bolt or nut in a plane of rotation of the bolt or nut is calculated. The first angle is related to rotation of the bolt or nut. A second angle of the structure in the plane of rotation of the bolt or nut is calculated. The second angle is unrelated to rotation of the bolt or nut. The initial angle difference between the first and second angles is calculated when the bolt or nut is tight. A subsequent angle difference between the first and second angles is calculated during the inspection. Using the initial angle difference and the subsequent angle difference, the screwed-out angle of the bolt or nut is obtained. Then, the tightness state of the bolt or nut is determined based on the screwed-out angle.

MEMS DEVICE BUILT USING THE BEOL METAL LAYERS OF A SOLID STATE SEMICONDUCTOR PROCESS
20210206624 · 2021-07-08 · ·

A MEMS device formed using the materials of the BEOL of a CMOS process where a post-processing of vHF and post backing was applied to form the MEMS device and where a total size of the MEMS device is between 50 um and 150 um. The MEMS device may be implemented as an inertial sensor among other applications.

MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR
20210002129 · 2021-01-07 · ·

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

MEMS or NEMS device with stacked stop element

The invention relates to a sensor-type or actuator-type MEMS or NEMS device provided with a stacked stop element comprising a first flat layer having a first flat electrode intended to be at a first electric potential and a second flat electrode intended to be at a second electric potential different from the first potential, said first flat electrode being movable relative to the second flat electrode in a first direction parallel to the first flat layer, a second flat layer placed on top of the first flat layer and electrically insulated from the first flat layer by at least one intermediate layer made of an insulating material, the second flat layer comprising a first flat element that is mechanically secured to the first flat electrode, and a second flat element that is mechanically secured to the second flat electrode, characterized in that it further comprises at least one stop element extending from the first flat element or the second flat element in the first direction and projecting from said flat element in the first direction, the stop element extending from one of the flat elements being intended to be at the same potential as an opposite surface belonging to the other flat element, and the stop element and the electrodes further being designed for the stop element to come into contact with the opposite surface and to stop the two flat electrodes from moving towards each other in the first direction when under stress.

MEMS sensors with selectively adjusted damping of suspension

A micro-electro-mechanical systems (MEMS) device and method of fabricating the MEMS device are disclosed. The MEMS device comprises a substrate, one or more suspension structures connected to the substrate, one or more metallized layers on the one or more suspension structures, and one or more sense structures connected to the one or more suspension structures. The one or more metallized layers provide selectively adjusted damping of the one or more suspension structures.

Method for manufacturing a micromechanical inertial sensor
10730746 · 2020-08-04 · ·

A method for manufacturing a micromechanical inertial sensor, including: forming a movable MEMS structure in a MEMS wafer; connecting a cap wafer to the MEMS wafer; forming an access opening into the cavity, the access opening to the cavity being formed from two opposing sides; a defined narrow first access opening being formed from one side of the movable MEMS structure and a defined wide second access opening being formed from a surface of the MEMS wafer, the second access opening being formed to be wider in a defined manner than the first access opening; and closing the first access opening while enclosing a defined internal pressure in the cavity.

DEVICE, SYSTEM, METHOD, AND COMPUTER PRODUCT FOR DETECTING AND EVALUATING ENVIRONMENTAL QUANTITIES AND EVENTS WITH MODULAR APPROACH AND VARIABLE COMPLEXITY

A system for detecting and evaluating environmental quantities and events is formed by a detection and evaluation device and a mobile phone, connected through a wireless connection. The device is enclosed in a containment casing housing a support carrying a plurality of inertial sensors and environmental sensors. A processing unit is coupled to the inertial sensors and to the environmental sensors. A wireless connection unit, is coupled to the processing unit and a wired connection port, is coupled to the processing unit. A programming connector is coupled to the processing unit and is configured to couple to an external programming unit to receive programming instructions of the processing unit. A storage structure is coupled to the processing unit and a power-supply unit supplied power in the detection and evaluation device. The mobile phone stores an application, which enables a basicuse mode, an expert use mode, and an advanced use mode.

Rotational speed sensor with minimized interference movements in the driving mode

A rotation rate sensor having a first structure movable with respect to the substrate, a second structure movable with respect to the substrate and with respect to the first structure, a first drive structure for deflecting the first structure with a motion component parallel to a first axis, and a second drive structure for deflecting the second structure with a motion component parallel to the first axis. The first and second structures are excitable to oscillate in counter-phase, with motion components parallel to the first axis, the first drive structure having a first spring mounted on the substrate to counteract a pivoting of the first structure around an axis parallel to a second axis extending perpendicularly to a principal extension plane, the second drive structure having a second spring mounted on the substrate to counteracts a pivoting of the second structure around a further axis parallel to the second axis.

Micro-electro-mechanical device and manufacturing process thereof

A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.