Systems and methods for multi-sensor integrated sensor devices are provided. In one embodiment, a sensor device comprises: a substrate having a first surface and an opposing second surface; a plurality of sensor cavities recessed into the substrate; a first sensor die sealed within a first sensor cavity of the plurality of sensor cavities at a first atmospheric pressure level; a second sensor die sealed within a second sensor cavity of the plurality of sensor cavities at a second atmospheric pressure level that is a different pressure than the first atmospheric pressure level; a first plurality of direct feedthrough electrical conductors embedded within the substrate coupled to the first sensor die; and a second plurality of direct feedthrough electrical conductors embedded within the substrate coupled to the second sensor die.

A method for manufacturing a micromechanical inertial sensor, including: forming a movable MEMS structure in a MEMS wafer; connecting a cap wafer to the MEMS wafer; forming an access opening into the cavity, the access opening to the cavity being formed from two opposing sides; a defined narrow first access opening being formed from one side of the movable MEMS structure and a defined wide second access opening being formed from a surface of the MEMS wafer, the second access opening being formed to be wider in a defined manner than the first access opening; and closing the first access opening while enclosing a defined internal pressure in the cavity.

A method is provided for protecting a MEMS unit, in particular a MEMS sensor, against infrared investigations, a surface patterning being performed for at least one first area of a surface of the MEMS unit, the first area absorbing, reflecting or diffusely scattering more than 50%, in particular more than 90% of an infrared light incident upon it.

A sensor chip includes a first substrate with a first surface and a second surface including at least one CMOS circuit, a first MEMS substrate with a first surface and a second surface on opposing sides of the first MEMS substrate, a second substrate, a second MEMS substrate, and a third substrate including at least one CMOS circuit. The first surface of the first substrate is attached to a packaging substrate and the second surface of the first substrate is attached to the first surface of the first MEMS substrate. The second surface of the first MEMS substrate is attached to the second substrate. The first substrate, the first MEMS substrate, the second substrate and the packaging substrate are provided with electrical inter-connects.

MEMS dies embedded in glass cores of integrated circuit (IC) package substrates are disclosed. An example integrated circuit (IC) package includes a package substrate including a glass core, the example integrated circuit (IC) package also includes a micro electromechanical system (MEMS) die positioned in a cavity of the glass core.

A rotation rate sensor having a first structure movable with respect to the substrate, a second structure movable with respect to the substrate and with respect to the first structure, a first drive structure for deflecting the first structure with a motion component parallel to a first axis, and a second drive structure for deflecting the second structure with a motion component parallel to the first axis. The first and second structures are excitable to oscillate in counter-phase, with motion components parallel to the first axis, the first drive structure having a first spring mounted on the substrate to counteract a pivoting of the first structure around an axis parallel to a second axis extending perpendicularly to a principal extension plane, the second drive structure having a second spring mounted on the substrate to counteracts a pivoting of the second structure around a further axis parallel to the second axis.

System and methods for highly integrated optical readout MEMS sensors are provided. In one embodiment, a method for an integrated waveguide optical-pickoff sensor comprises: launching a laser beam generated by a laser light source into an integrated waveguide optical-pickoff monolithically fabricated within a first substrate, the integrated waveguide optical-pickoff including an optical input port, a coupling port, and an optical output port; and detecting an amount of coupling of the laser beam from the coupling port to a sensor component separated from the coupling port by a gap by measuring an attenuation of the laser beam at the optical output port.

A micro-electro-mechanical systems (MEMS) device and method of fabricating the MEMS device are disclosed. The MEMS device comprises a substrate, one or more suspension structures connected to the substrate, one or more metallized layers on the one or more suspension structures, and one or more sense structures connected to the one or more suspension structures. The one or more metallized layers provide selectively adjusted damping of the one or more suspension structures.

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

A layer material which is particularly suitable for the realization of self-supporting structural elements having an electrode in the layer structure of a MEMS component. The self-supporting structural element is at least partially made up of a silicon carbonitride (Si.sub.1-x-yC.sub.xN.sub.y)-based layer.