A pressure sensor includes a base, a sensor facing the base in a height direction with a space between the sensor and the base to sense pressure applied to a sensing surface on a side opposite to the base in the height direction, a surrounding portion raised in the height direction from the base and surrounding the sensor with a groove extending around the sensor, between the surrounding portion and the sensor, a coupling portion coupling the sensor with the surrounding portion, and a beam in the groove to apply a resistance to the surrounding portion moving toward the sensor.

A method is provided that includes forming a first metal layer of a seal structure over a micro-electromechanical system (MEMS) structure and over a channel formed through the MEMS structure to an integrated circuit of a semiconductor structure. The first metal layer is formed at a first temperature. The method includes forming a second metal layer over the first metal layer. The second metal layer is formed at a second temperature less than the first temperature. The method includes performing a first cooling process to cool the semiconductor structure.

A method for detecting contamination of a microelectromechanical sensor element. The method includes the following steps: outputting heating control signals for controlling a heating device in order to heat the sensor element, receiving measuring signals that represent a physical variable that is measured with the aid of the heated sensor element, ascertaining, based on the measured physical variable, whether the sensor element has contamination or is free of contamination, outputting result signals that represent a result indicating whether the sensor element has contamination or is free of contamination. Moreover, a device is described.

Aspects of the subject technology relate to an apparatus including a housing and a substrate. The apparatus further includes a sensor, an integrated circuit mounted on the substrate, and one or more heating elements configured to adjust a temperature of the sensor to facilitate measurement of temperature sensitivity and calibration of the sensor.

A sensor device includes a substrate having a front surface and an opposing back surface. The back surface defines an indented region having an indented surface. The substrate defines a bottom port extending between the front surface and the indented surface. The sensor further includes a microelectromechanical systems (MEMS) transducer mounted on the front surface of the substrate over the bottom port. The sensor also includes a filtering material disposed on the indented surface and covering the bottom port. The filtering material provides resistance to ingression of solid particles or liquids into the sensor device. The filtering material is configured to provide high acoustic permittivity and have low impact on a signal-to-noise ratio of the sensor device.

A sensor unit includes a transducer element monitoring a measurand and generating an electrical output signal correlated with the measurand, a sensor substrate having a first surface and an opposite second surface, a recess extending from the first surface of the substrate through to the second surface of the substrate, and a circuit carrier. The transducer element and a first electrically conductive contact pad are arranged on the first surface and electrically connected. The circuit carrier has a second electrically conductive contact pad. The sensor substrate is mounted on the circuit carrier with the first surface facing the circuit carrier. The first electrically conductive contact pad and the second electrically conductive contact pad are interconnected by an electrically conductive material filled in from the second surface towards the first surface of the sensor substrate.

A first electronic component, such as a sensor having opposed first and second surfaces and a first thickness, is arranged on a support member with the second surface facing towards the support member. A second electronic component, such as an integrated circuit mounted on a substrate and having a second thickness less than the first thickness, is arranged on the support member with a substrate surface opposed the second electronic component facing towards the support member. A package molding material is molded onto the support member to encapsulate the second electronic component while leaving exposed the first surface of the first electronic component. The support member is then removed to expose the second surface of the first electronic component and the substrate surface of the substrate.

A piezoelectric microelectromechanical systems device can include a cavity bounded by walls and an asymmetrical bimorph structure at least partially spanning the cavity that includes at least a piezoelectric layer and two electrode layers. The electrode layers can have relative thicknesses configured to compensate for expected temperature stress in the bimorph structure. Thus, metals having different thicknesses can be positioned and configured to compensate deflection due to thermal stress of any or all of the piezoelectric layer, the first metal layer, and second metal layer and a substrate. A method for making the piezoelectric microelectromechanical systems device is also provided.

Methods of manufacturing a pressure sensor from an SOI wafer are provided. In preferred embodiments, the methods comprise forming a cavity in a SOI wafer by removing a first portion of a bottom silicon layer on the bottom side of the SOI wafer to a depth of an insulator layer; depositing a layer of a second material over the cavity; removing both the silicon layer and the insulator layer from a top side of the SOI wafer in a first plurality of areas above the cavity to form a diaphragm from the layer of a second material, wherein at least one support structure that spans the diaphragm is formed from material above the cavity that was not removed; and forming at least one piezoresistor in the SOI wafer over an intersection of the support structure and SOI wafer at an outside edge of the diaphragm.

Aspects of the subject technology relate to an apparatus including a housing, one or more piezoresistive elements and a magnetic actuator. The housing includes a membrane, and the piezoresistive elements are disposed on the membrane to sense a displacement due to a deflection of the membrane. The magnetic actuator is disposed inside a cavity of the housing. The magnetic actuator exerts a repulsive force onto the membrane to reduce the deflection of the membrane.