Embodiments of the present disclosure are directed toward through-silicon via (TSV)-based devices and associated techniques and configurations. In one embodiment, an apparatus includes a die having active circuitry disposed on a first side of the die and a second side disposed opposite to the first side, a bulk semiconductor material disposed between the first side and the second side of the die and a device including one or more of a capacitor, resistor or resonator disposed in the bulk semiconductor material, the capacitor, resistor or resonator including one or more TSV structures that extend through the bulk semiconductor material, an electrically insulative material disposed in the one or more TSV structures and an electrode material or resistor material in contact with the electrically insulative material within the one or more TSV structures.

A wafer-level assembly method for a micro hemispherical resonator gyroscope includes: after independently manufactured glass substrates are softened and deformed at a high temperature, forming a micro hemispherical resonator on the glass substrate; forming glass substrate alignment holes at both ends of the glass substrate by laser ablation; aligning and fixing a plurality of identical micro hemispherical resonators on a wafer fixture by using the alignment holes as a reference, and then performing operations by using the wafer fixture as a unit to implement subsequent processes that include: releasing the micro hemispherical resonators, metallizing the surface, fixing to the planar electrode substrates, separating the wafer fixture and cleaning to obtain a micro hemispherical resonator gyroscope driven by a bottom planar electrode substrate. The wafer-level assembly method includes: fixedly mounting the plurality of independently manufactured micro hemispherical resonators on the same wafer fixture to implement a wafer-level installation operation.

A method of fabricating an electronic component includes forming a functional unit on a main surface of a substrate, forming a sacrificial layer covering the functional unit on the main surface, forming a cap layer covering the sacrificial layer, the cap layer forming a periphery enclosing the cavity on the main surface, forming holes through the cap layer, forming a cavity by removing the sacrificial layer using a wet etching process through the holes, the holes including a peripheral hole communicating an inside of the cavity with an outside of the cavity along the main surface, and forming a first resin layer covering the cap layer and the main surface.

Provided herein is a method including bonding a first oxide layer on a handle substrate to a second oxide layer on a complementary metal oxide semiconductor (“CMOS”), wherein the fusion bonding forms a unified oxide layer including a diaphragm overlying a cavity on the CMOS. The handle substrate is removed leaving the unified oxide layer. A piezoelectric film stack is deposited over the unified oxide layer. Vias are formed in the piezoelectric film stack and the unified oxide layer. An electrical contact layer is deposited, wherein the electrical contact layer electrically connects the piezoelectric film stack to an electrode on the CMOS.

A PMUT includes a substrate, a stopper, and a multi-layered structure, where the substrate includes a corner, and a cavity is disposed in the substrate. The stopper is in contact with the corner of the substrate and the cavity. The multi-layered structure is disposed over the cavity and attached to the stopper and the multi-layered structure includes at least one through hole in contact with the cavity.

Disclosed are methods for determining and classifying aircraft air contaminants comprising one or more of: turbine engine oil, hydraulic fluid and deicing fluid using contaminant analyzers comprising a contaminant collector comprising a membrane and a heater vaporizing the contaminants; a gravimetric sensor generating a response when contaminant mass is added to or removed from the sensor, the sensor receiving contaminants desorbed from the heated membrane; a frequency measurement device, measuring the response generated by the sensor as the contaminant is added to and removed from the sensor; a computer readable medium bearing a contaminant recognition program and calibration data; a processor executing the program, the program including a module classifying contaminants by type, and a module using the data for comparison with magnitude of response generated by the sensor to calculate contaminant concentration; and, a pump, generating flow of air through the collector before and after the membrane is heated.

A MEMS type inertial sensor comprising a support structure having at least a first seismic body and a second seismic body connected thereto by resilient means in order to be movable in a suspension plane, transducers for maintaining the seismic bodies in vibration and for determining movements of the seismic bodies in the suspension plane, and a control unit connected to the transducers by electrical conductor means. The transducers comprise at least one electrode secured to the first seismic body and at least one electrode secured to the second seismic body, the two electrodes being arranged to enable relative movements of the seismic bodies relative to each other in the suspension plane to be measured directly.

A method of forming an IC (integrated circuit) device is provided. The method includes receiving a first wafer including a first substrate and including a plasma-reflecting layer disposed on an upper surface thereof. The plasma-reflecting layer is configured to reflect a plasma therefrom. A dielectric protection layer is formed on a lower surface of a second wafer, wherein the second wafer includes a second substrate. The second wafer is bonded to the first wafer, such that a cavity is formed between the plasma-reflecting layer and the dielectric protection layer. An etch process is performed with the plasma to form an opening extending from an upper surface of the second wafer and through the dielectric protection layer into the cavity. A resulting structure of the above method is also provided.

A process for manufacturing MEMS devices, includes forming a first assembly, which comprises: a dielectric region; a redistribution region; and a plurality of unit portions. Each unit portion of the first assembly includes: a die arranged in the dielectric region; and a plurality of first and second connection elements, which extend to opposite faces of the redistribution region and are connected together by paths that extend in the redistribution region, the first connection elements being coupled to the die. The process further includes: forming a second assembly which comprises a plurality of respective unit portions, each of which includes a semiconductor portion and third connection elements; mechanically coupling the first and second assemblies so as to connect the third connection elements to corresponding second connection elements; and then removing at least part of the semiconductor portion of each unit portion of the second assembly, thus forming corresponding membranes.

A capacitive micromachined ultrasonic transducer (CMUT) and methods of forming the same are disclosed herein. In one implementation, the CMUT comprises a glass substrate having a cavity; a patterned metal bottom electrode situated within the cavity of the glass substrate; and a vibrating plate comprising at least a conducting layer, wherein the vibrating plate is anodically bonded to the glass substrate to form an air-tight seal between the vibrating plate and the substrate and wherein a pressure inside the cavity is less than atmospheric pressure (i.e., a vacuum). In another implementation, the CMUT comprises a glass substrate with Through-Glass-Via (TGV) interconnects, wherein a metal electrode is electrically connected to a TGV and wherein said metal electrode can be in the bottom of a cavity of the glass substrate or on the vibrating plate.