A CMOS-MEMS resonant transducer and a method for fabricating the same are disclosed, which provide the CMOS-MEMS resonant transducer having narrow gaps(<500 nm) with high yield by etching a well-defined free-free beam structure, furthermore, the TiN layers disposed at the bottom of the resonant body may efficiently reduce the frequency drift due to electrostatic charges. The method for fabricating the CMOS-MEMS resonant transducer is also adapted to the processes of CMOS-MEMS platform with various scales, which provides routing and MEMS design flexibility.

A device includes a base substrate (700) with a micro component (702) attached thereto. Suitably it is provided with routing elements (704) for conducting signals to and from the component (702). It also includes spacer members (706) which also can act as conducting structures for routing signals vertically. There is a capping structure (708) of a glass material, provided above the base substrate (700), bonded via the spacer members (706), preferably by eutectic bonding, wherein the capping structure (708) includes vias (710) including metal for providing electrical connection through the capping structure. The vias can be made by a stamping/pressing method entailing pressing needles under heating to soften the glass and applying pressure, to a predetermined depth in the glass. However, other methods are possible, e-g- drilling, etching, blasting.

The invention relates to a covering (1) for an electronic component (e.g. of the MEMS, BAW, or SAW type). The covering comprises at least one layer (5, 6, 7) having a structure (19, 20, 21) with a number of prominences (8, 9, 15) and/or depressions (10, 11, 16). The invention furthermore relates to a method for producing a covering (1) of this type.

Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.

A resonance device that includes a MEMS substrate including a resonator, an upper lid that seals a vibration space of the resonator, and a ground portion positioned between the MEMS substrate and the upper lid, the ground portion being extended to an inside of the upper lid and electrically connected to the upper lid.

Micromachined ultrasonic transducers having a self-assembled monolayer formed on a surface of a sealed cavity are described. A micromachined ultrasonic transducer may include a flexible membrane configured to vibrate over a sealed cavity, and the self-assembled monolayer may coat some or all of the interior surfaces of the sealed cavity. During fabrication, the sealed cavity may be formed by bonding the membrane to a substrate such that the sealed cavity is between the membrane and the substrate. An access hole may be formed through the membrane to the sealed cavity and the self-assembled monolayer is formed on surface(s) of the sealed cavity by introducing precursors into the sealed cavity through the access hole.

A wafer-level package for micro-acoustic devices and a method of manufacture is provided. The package comprises a base wafer with electric device structures. A frame structure is sitting on top of the base wafer enclosing particular device areas for the micro-acoustic devices. A cap wafer provided with a thin polymer coating is bonded to the frame structure to form a closed cavity over each device area and to enclose within the cavity the device structures arranged on the respective device area.

A resonator is provided that includes a vibrating section that vibrates in a contour vibration mode, a frame that surrounds at least a portion of the vibrating section, supporting sections extending along a Y-axis direction and connecting the vibrating section and the frame. The vibrating section includes a through hole that extends along an X-axis direction perpendicular to the Y-axis direction such that a coupling section is disposed between the through hole and each of the supporting sections. The length SL of the through hole in the X-axis direction is longer than the length Sd of the coupling section in the Y-axis direction.

In described examples, a MEMS device component includes a passivation layer formed from a vapor and/or a liquid compound that may include precursors. The compound may contain amino acid, antioxidants, nitriles or other compounds, and may be disposed on a surface of the MEMS device component and/or a package or package portion thereof. If the compound is a precursor, it may be treated to cause formation of the passivation layer from the precursor.

A resonance device that includes a MEMS substrate that includes a resonator, a top cover having a silicon oxide film on a surface thereof that faces the MEMS substrate, and a bonding part that bonds the MEMS substrate and the top cover to each other so as to seal a vibration space of the resonator. The silicon oxide film includes a through hole that is formed along at least part of the periphery of the vibration space when the top cover is viewed in a plan view and that penetrates to a surface of the top cover. The through hole includes a first metal layer.