The present disclosure relates to a piezoelectric single-crystal element, a MEMS device using same, and a method for manufacturing same, wherein the piezoelectric single-crystal element includes a wafer, a lower electrode stacked on the wafer, a piezoelectric single-crystal thin film stacked on the lower electrode, and an upper electrode stacked on the piezoelectric single-crystal thin film, wherein the piezoelectric single-crystal thin film is composed of PMN-PT, PIN-PMN-PT or Mn:PIN-PMN-PT, and the piezoelectric single-crystal thin film has a polarization direction set to a <001> axis, a <011> axis or a <111> axis, and a MEMS device using same.

An electrostatic device includes: a fixed portion, a moveable portion, and an elastically-supporting portion that are formed in a same substrate; and a first glass package and a second glass package that are anodically bonded to each other on one and the other of front and back surfaces of the substrate with the fixed portion and the elastically-supporting portion separated from each other, the second glass package forms a sealed space in which the moveable portion is arranged between the first and second glass packages, an electret is formed at least partially in the fixed portion and the moveable portion, and a first electrode connected to the fixed portion and exposed on an outer surface of the second glass package and a second electrode connected to the elastically-supporting portion and exposed on the outer surface of the second glass package are formed in the second glass package.

An electronic device including a substrate, a sensor, a partition wall structure, a pressurizing component, and a stopping structure is provided. The substrate has a carrying surface. The sensor is disposed on the carrying surface. The partition wall structure is disposed on the carrying surface and surrounds the sensor. The pressurizing component is disposed on the partition wall structure. The pressurizing component, the partition wall structure, and the substrate jointly form a cavity, and the pressurizing component includes a mass and a vibration membrane. The stopping structure is disposed between the pressurizing component and the partition wall structure and extends into the cavity. The stopping structure has at least one opening penetrating the stopping structure.

Disclosed herein is a MEMS ASIC. In some examples, the MEMS ASIC can include a MEMS, an analog front end (AFE) amplifier, an analog-to-digital converter (ADC), an overload detector, and a high-ohmic (HO) block. The HO block and the MEMS can form a high-pass filter (HPF). The impedance of the HO block can be related to the DC operating level of the AFE amplifier and the cutoff frequency of the HPF. In some examples, an overload event can occur, and the overload detector can be configured to adjust the impedance of the HO block to reduce the settling time of the MEMS ASIC. Methods of using the MEMS ASIC to reduce the settling time of the MEMS ASIC due to an overload event are disclosed herein.

A microelectromechanical systems (MEMS) device includes a MEMS device body connected to a first mooring portion and a second mooring portion. The MEMS device body further includes a first cantilever and a second cantilever and connected by a spring. The spring is in operable communication with the first cantilever and the second cantilever.

A nanosheet MEMS sensor device and method are described for integrating the fabrication of nanosheet transistors (61) and MEMS sensors (62) in a single nanosheet process flow by forming separate nanosheet transistor and MEMS sensor stacks (12A-16A, 12B-16B) of alternating Si and SiGe layers which are selectively processed to form gate electrodes (49A-C) which replace the silicon germanium layers in the nanosheet transistor stack, to form silicon fixed electrodes using silicon layers (13B-2, 15B-2) on a first side of the MEMS sensor stack, and to form silicon cantilever electrodes using silicon layers (13B-1, 15B-1) on a second side of the MEMS sensor stack by forming a narrow trench opening (54) in the MEMS sensor stack to expose and remove remnant silicon germanium layers on the second side in the MEMS sensor stack.

A vibration sensor/accelerometer includes, in various implementations, a MEMS die that includes a plate having an aperture, an anchor disposed within the aperture, a plurality of arms (e.g., rigid arms) extending from the anchor, and a plurality of resilient members (e.g., looped or folded springs with a carefully designed spring stiffness), each resilient member connecting the plate to an arm of the plurality of arms. The plate may be made from a solid layer in which the resilient members are etched from the same layer. The MEMS die may also include top and bottom wafers, and travel stoppers extending from the top and bottom wafers as well as through the plate.

Techniques, systems, and devices are described for implementing for implementing computation devices and artificial neurons based on nanoelectromechanical (NEMS) systems. In one aspect, a nanoelectromechanical system (NEMS) based computing element includes: a substrate; two electrodes configured as a first beam structure and a second beam structure positioned in close proximity with each other without contact, wherein the first beam structure is fixed to the substrate and the second beam structure is attached to the substrate while being free to bend under electrostatic force. The first beam structure is kept at a constant voltage while the other voltage varies based on an input signal applied to the NEMS based computing element.

A vibrational sensor comprises a microelectromechanical (MEMS) microphone having a base and a lid defining an enclosure, a MEMS acoustic pressure sensor within the enclosure, and a port defining an opening through the enclosure and material that is arranged to plug the port of the MEMS microphone. In embodiments, the MEMS microphone further includes an integrated circuit within the enclosure that is electrically connected to the MEMS acoustic pressure sensor. In some embodiments, the integrated circuit is configured to bias and buffer the MEMS acoustic pressure sensor. In these and other embodiments, the integrated circuit includes circuitry for conditioning and processing electrical signals generated by the MEMS acoustic pressure sensor. In embodiments, the material is arranged with respect to the port so as to cause the MEMS acoustical pressure sensor to sense vibrational energy rather than acoustic energy as in a conventional MEMS microphone.

A sensor element includes a membrane structure suspended on a frame structure, wherein the membrane structure includes a membrane element and an actuator. The membrane structure is deflectable in a first stable deflection state and in a second stable deflection state and is operable in a resonance mode in at least one of the first and the second stable deflection states. The actuator is configured to deflect the membrane structure in a first actuation state into one of the first and the second stable deflection states, and to operate the membrane structure in a second actuation state in a resonance mode having an associated resonance frequency.