Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material exposing a wafer underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam.

A vibration sensor with monitoring function is provided, which includes a substrate, a microelectromechanical vibration sensor chip and an application-specific integrated circuit chip. The microelectromechanical vibration sensor chip is disposed on the substrate and detects a vibration applied to an object to generate a plurality of vibration signals. The application-specific integrated circuit chip is disposed on the substrate and electrically connected to the microelectromechanical vibration sensor chip, which includes a sampling module, a transform module and an analysis module. The sampling module receives and converts the vibration signals into a plurality of digital signals, and filters the digital signals to generate a plurality of time-domain data. The transform module transforms the time-domain data into a frequency-domain data according to a predetermined number. The analysis module executes a comparison process to compare the frequency-domain data with a predetermined spectrum feature table and generates a notification signal according to the comparison result.

A MEMS device can include a first support layer, a second support layer, and a solid dielectric suspended between the first support layer and the second support layer. The solid dielectric can move relative to the first support layer and the second support layer and can include a plurality of apertures. The MEMS device can include a first plurality of electrodes coupled to the first support layer and the second support layer and extending through a first subset of the plurality of apertures. The MEMS device can include a second plurality of electrodes coupled to the first support layer and extending partially into a second subset of the plurality of apertures. The MEMS device can include a third plurality of electrodes coupled to the second support layer and extending partially into a third subset of the plurality of apertures.

Disclosed herein is a MEMS ASIC. In some examples, the MEMS ASIC can include a MEMS, an analog front end (AFE) amplifier, an analog-to-digital converter (ADC), an overload detector, and a high-ohmic (HO) block. The HO block and the MEMS can form a high-pass filter (HPF). The impedance of the HO block can be related to the DC operating level of the AFE amplifier and the cutoff frequency of the HPF. In some examples, an overload event can occur, and the overload detector can be configured to adjust the impedance of the HO block to reduce the settling time of the MEMS ASIC. Methods of using the MEMS ASIC to reduce the settling time of the MEMS ASIC due to an overload event are disclosed herein.

The present disclosure relates to a sensor assembly (100) comprising: a base (102) having a host-device interface (104), a lid (108) mounted on the base (102) to form a housing (110), the lid (108) having an insulative structural core (112) between an inner metal skin (114) and an outer metal skin (116); and a transduction element (118) disposed in the housing (112). Advantageously, the lid (108) of the sensor assembly (100) can help to minimize and reduce undesirable thermo-acoustic effects produced by external environmental conditions that may result in acoustic artifacts.

The surface of the MEMS piezoelectric transducer that optimizes the capacitor shape of the present application is covered with m groups of capacitor (101, 102, 103, 104, 109), m being a natural number ≥2. When the MEMS piezoelectric transducer is loaded with a certain load, a stress of a region covered by any one of a first group of capacitors>a stress of a region covered by any one of a second group of capacitors> . . . >a stress of a region covered by any one of a (m−1).sub.th group of capacitors>a stress of a region covered by any one of a m.sub.th group of capacitors. Capacitors of the same group are connected in series and/or in parallel; capacitors of different groups are connected in series. The present application performs optimization design to the shape, position and number of the capacitor based on the stress distribution of the MEMS piezoelectric transducer when a certain load is loaded. It can significantly reduce the charge flow on the piezoelectric transducer due to uneven stress distribution, enhance the electromechanical transducing coefficient of the piezoelectric transducer as a whole, and improve output of the electrical signal of the transducer.

A semiconductor device for use in a sensor device has a deformable membrane for the measurement of an acceleration, a vibration, or a pressure. The semiconductor device includes a deformable membrane having a membrane border; a structure holding the deformable membrane in correspondence of the membrane border; at least one electric contact to obtain an electric signal indicative of deformation of the deformable membrane; and mass elements suspended from the membrane.

The present disclosure relates to a MEMS vibrator or the like that has excellent chemical resistance and an excellent mechanical strength and that is easily thinned. The present disclosure is a MEMS vibrator comprising: a vibrating film including a graphite film; and a silicon member supporting the vibrating film, the graphite film having a thickness of 50 nm or more and less than 20 μm, and the graphite film having a Young's modulus along a graphite film plane direction of 700 GPa or more.

A MEMS vibration sensor includes a membrane having an inertial mass, the membrane being affixed to a holder of the MEMS vibration sensor; and a segmented backplate spaced apart from the membrane, the segmented backplate being affixed to the holder.

A sensor, such as a piezoelectric MEMS vibration sensor, includes a frame, a beam array comprising a plurality of beams, and a plurality of masses. Each beam of the plurality of beams has an anchored end and an unanchored end, with each beam being coupled to the frame at the anchored end. The unanchored end of each beam is coupled to a respective mass of the plurality of masses. Each beam of the plurality of beams can be configured to minimize a variation in a voltage output for a limited frequency range. In some implementations, the resonant frequency of each beam corresponds to a sensitivity peak in a limited frequency range.