A method of forming an IC (integrated circuit) device is provided. The method includes receiving a first wafer including a first substrate and including a plasma-reflecting layer disposed on an upper surface thereof. The plasma-reflecting layer is configured to reflect a plasma therefrom. A dielectric protection layer is formed on a lower surface of a second wafer, wherein the second wafer includes a second substrate. The second wafer is bonded to the first wafer, such that a cavity is formed between the plasma-reflecting layer and the dielectric protection layer. An etch process is performed with the plasma to form an opening extending from an upper surface of the second wafer and through the dielectric protection layer into the cavity. A resulting structure of the above method is also provided.

A preferred conformal penetrating multi electrode array includes a plastic substrate that is flexible enough to conform to cortical tissue. A plurality of penetrating semiconductor micro electrodes extend away from a surface of the flexible substrate and are stiff enough to penetrate cortical tissue. Electrode lines are encapsulated at least partially within the flexible substrate and electrically connected to the plurality of penetrating semiconductor microelectrodes. The penetrating semiconductor electrodes preferably include pointed metal tips. A preferred method of fabrication permits forming stiff penetrating electrodes on a substrate that is very flexible, and providing electrical connection to electrode lines within the substrate.

A MEMS force sensor including a first substrate, a second substrate and a plurality of conductive terminals is provided. The second substrate is disposed opposite to the first substrate and includes a deformable portion and a force receiving portion. The deformable portion has a plurality of sensing elements. The force receiving portion protrudes from a surface of the deformable portion which is back facing to the first substrate, such that a cavity is formed above the deformable portion. The conductive terminals are electrically connected to the sensing elements, and the conductive terminals are centrally disposed under the cavity. The second substrate is fixed with the first substrate through the conductive terminals. A force sensing apparatus is also provided.

A capacitive micromachined ultrasonic transducer (CMUT) and methods of forming the same are disclosed herein. In one implementation, the CMUT comprises a glass substrate having a cavity; a patterned metal bottom electrode situated within the cavity of the glass substrate; and a vibrating plate comprising at least a conducting layer, wherein the vibrating plate is anodically bonded to the glass substrate to form an air-tight seal between the vibrating plate and the substrate and wherein a pressure inside the cavity is less than atmospheric pressure (i.e., a vacuum). In another implementation, the CMUT comprises a glass substrate with Through-Glass-Via (TGV) interconnects, wherein a metal electrode is electrically connected to a TGV and wherein said metal electrode can be in the bottom of a cavity of the glass substrate or on the vibrating plate.

A sensor device includes a semiconductor chip. The semiconductor chip has a sensing region sensitive to mechanical loading. A pillar is mechanically coupled to the sensing region.

A semiconductor device having multiple MEMS (micro-electro mechanical system) devices includes a semiconductor substrate having a first MEMS device and a second MEMS device, and an encapsulation substrate having a top portion and sidewalls forming a first cavity and a second cavity. The encapsulation substrate is bonded to the semiconductor substrate at the sidewalls to encapsulate the first MEMS device in the first cavity and to encapsulate the second MEMS device in the second cavity. The second cavity includes at least one access channel at a recessed region in a sidewall of the encapsulation substrate adjacent to an interface between the encapsulation substrate and the semiconductor substrate. The access channel is covered by a thin film. The first cavity is at a first atmospheric pressure and the second cavity is at a second atmospheric pressure. The second air pressure is different from the first air pressure.

An optical micro-electromechanical system (MEMS) system is disclosed. The optical MEMS system includes a printed circuit board (PCB), and a MEMS optical integrated circuit (IC) package mounted to the PCB. The IC package includes a MEMS optical die, and a plurality of leads electrically and mechanically connected to the MEMS optical die and to the PCB. The optical MEMS system also includes one or more elastomeric grommets contacting one or more of the leads, where the grommets are configured to absorb mechanical vibration energy from the contacted leads.

A MEMS gas sensor includes a photoacoustic sensor including a thermal emitter and an acoustic transducer, the thermal emitter and the acoustic transducer being inside a mutual measurement cavity. The thermal emitter includes a semiconductor substrate and a heating structure supported by the semiconductor substrate. The heating structure includes a heating element. The MEMS gas sensor further includes a chemical sensor thermally coupled to the heating element, and the chemical sensor including a gas adsorbing layer.

A pressure sensor includes a silicon substrate which has a diaphragm, a frame-shaped side wall section which is placed on one surface side of the silicon substrate so as to surround the diaphragm in a plan view, a lid section which is placed so as to cover an opening of the side wall section and has a through-hole communicating inside and outside the side wall section, a sealing section which is placed on the lid section and seals the through-hole, and a pressure reference chamber which is defined by the silicon substrate, the side wall section, the lid section, and the sealing section, wherein a surface facing the pressure reference chamber of each of the side wall section and the lid section contains a silicon material.

A microelectromechanical system (MEMS) test structure includes a plurality of capacitors formed from sense electrodes and capacitive plates having a predetermined geometry and size associated with a related MEMS device such as a MEMS sensor. Based on the predetermined relationships between the capacitors of the test structure, and between the test structure and the MEMS devices, an effect of fringing fields on the sensed capacitances of the MEMS devices may be eliminated, and the capacitive gap of the MEMS device may be accurately measured.