A microrobot is disclosed. The microrobot includes a magnet configured to provide a motive force when magnetic force of one or more electrical coils act upon the magnet, a support member coupled to the magnet, a thermo-responsive polymer member coupled to each end of the support member at a proximal end, the thermo-responsive polymer member configured to articulate when heated, wherein the thermo-responsive polymer members configured to receive light from a microrobot structured light system and convert the received light into heat.

Microelectronic structure comprising at least one movable mass that is mechanically connected to a first mechanical element by a first mechanically linking connector and to a second mechanical element (24) by electrically conductive second mechanically linking connector, and a device for electrically biasing the second mechanically linking connector, the second mechanically linking connector being such that they are the seat of a thermo-piezoresistive effect, the second linking connector and the movable mass being placed with respect to each other so that a movement of the movable mass applies a mechanical stress to the second linking connector, wherein the electrically biasing device are DC voltage biasing device and form, with at least the second mechanically linking connector, a thermo-piezoresistive feedback electric circuit.

A microrobot is disclosed. The microrobot includes a magnet configured to provide a motive force when magnetic force of one or more electrical coils act upon the magnet, a support member coupled to the magnet, a thermo-responsive polymer member coupled to each end of the support member at a proximal end, the thermo-responsive polymer member configured to articulate when heated, wherein the thermo-responsive polymer members configured to receive light from a microrobot structured light system and convert the received light into heat.

A MEMS nanotube based radiation sensor that is low cost, low power, compact, reliable and is applicable across many fields and a method for fabricating such a sensor are described. Each sensor may be connected to an array of similar but distinct sensors that leverage different materials and nanotube technology to detect radiation.

An active cooling system is described. The active cooling system includes at least one cooling element that has a vent therein and is in communication with a fluid. The cooling element(s) are actuated to vibrate to drive the fluid toward a heat-generating structure and to alternately open and close at least one virtual valve corresponding to the vent. The virtual valve is open for a low flow resistance and closed for a high flow resistance. The vent remains physically open for the virtual valve being closed.

A microelectromechanical structure with electrothermal actuation including a fixed part, a moveable part, a first electrothermal actuating beam enabling an electric current to flow from the fixed part to the moveable part and a second electrothermal actuating beam enabling an electric current to flow from the fixed part to the moveable part, the beams being mechanically connected to the moveable part enabling a displacement of the moveable part by electrothermal actuation, an electrically conductive connecting element connecting the moveable part to the fixed part, a first connector for connecting the first actuating beam to a first polarisation source and a second connector for connecting the second actuating beam to a second polarisation source, such that the first and the second can be polarised differently and separately.

A planer silicon-based displacement amplification structure and a method are provided for latching the displacement. The displacement amplification structure may include a first actuation beam and a second actuation beam coupled to the first beam with an angle, the ends of the first beam and the second beam coupled to fixture sites, and an end of the second beam coupled to a motion actuator; a motion shutter coupled to an opposing end of the first and second beams; and a latching thermoelectric displacement structure blocking the shutter return path and have faster response than the shutter structure.

Provided is a method including at least the thermal treatment step of thermally treating a SOI substrate having a first silicon layer at a first temperature that the diffusion flow rate of an interstitial silicon atom in a silicon single crystal is higher than the diffusion flow rate of an interstitial oxygen atom and the processing step of processing the SOI substrate after the thermal treatment step to obtain a displacement enlarging mechanism.

According to an embodiment, a semiconductor device includes a first actuator, a second actuator, a first frame provided between the first actuator and the second actuator, a first connection member connecting the first actuator and the first frame to each other, a second connection member connecting the first actuator and the first frame to each other at a position different from a position at which the first connection member connects the first actuator and the first frame to each other, a third connection member connecting the second actuator and the first frame to each other, a fourth connection member connecting the second actuator and the first frame to each other at a position different from a position at which the third connection member connects the second actuator and the first frame to each other.

An actuator apparatus includes a pair of substrates facing each other; a plurality of bias actuators that each vary a gap dimension of a gap between the pair of substrates; a gap detection portion that detects the gap dimension; and a voltage control unit that controls driving of each of the bias actuators on the basis of the detected gap dimension. The bias actuators are located asymmetric relative to a driving central axis and are mutually independently driven; and the voltage control unit derives driving parameters for use in driving the bias actuators, on the basis of voltages and gap dimensions obtained by sequentially switching and driving the bias actuators on by one.