A piezoelectric microelectromechanical systems device can include a cavity bounded by walls and an asymmetrical bimorph structure at least partially spanning the cavity that includes at least a piezoelectric layer and two electrode layers. The electrode layers can have relative thicknesses configured to compensate for expected temperature stress in the bimorph structure. Thus, metals having different thicknesses can be positioned and configured to compensate deflection due to thermal stress of any or all of the piezoelectric layer, the first metal layer, and second metal layer and a substrate. A method for making the piezoelectric microelectromechanical systems device is also provided.

Aspects of the subject technology relate to an apparatus including a housing, one or more piezoresistive elements and a magnetic actuator. The housing includes a membrane, and the piezoresistive elements are disposed on the membrane to sense a displacement due to a deflection of the membrane. The magnetic actuator is disposed inside a cavity of the housing. The magnetic actuator exerts a repulsive force onto the membrane to reduce the deflection of the membrane.

A semiconductor device includes a first silicon layer disposed between second and third silicon layers and separated therefrom by respective first and second oxide layers. A cavity within the first silicon layer is bounded by interior surfaces of the second and third silicon layers, and a passageway extends through the second silicon layer to enable material removal from within the semiconductor device to form the cavity. A metal feature is disposed within the passageway to hermetically seal the cavity.

A light deflector includes a stationary part; a movable unit having a reflecting surface; a connecting part between the movable unit and the stationary part; a drive unit disposed on a first surface of the connecting part, the drive unit configured to deform the connecting part to oscillate the movable unit; and a rib disposed on a second surface of the connecting part, the second surface being an opposite surface of the first surface. The rib includes a portion whose longitudinal direction is orthogonal to a direction at which the connecting part is bent.

Techniques relating to a micro-electro-mechanical (MEMS) device configured to measure direct axial and shear stress components of a stress tensor are described. The MEMS device includes a first and second circuit configured in a double rosette structure coupled with a third circuit in a standard rosette structure to form a triple rosette piezo-resistive gauge circuit. The first circuit includes at least one piezoresistive element suspended from a substrate, and at least one piezoresistive element fixed to the substrate. The second circuit includes each piezoresistive element fixed to the substrate. The third circuit includes at least one piezoresistive element fixed to the substrate. Additionally, the MEMS device may be coupled to one or more processing systems to determine a mechanical stress tensor that is applied to the MEMS device based on measurements received from the MEMS device.

A method for large scale integration of haptic devices is described. The method comprises forming a first elastomer layer of a large scale integration (LSI) device on a substrate according to a specified manufacturing process, the first elastomer layer having a plurality of fluid based circuits, the first elastomer layer adhering to a plurality of formation specifications. The method further comprises curing the first elastomer layer. Additionally, one or more additional elastomer layers of the LSI device are formed with the first elastomer layer according to the specified manufacturing process, the one or more additional elastomer layers having a plurality of fluid based circuits, the one or more additional elastomer layers adhering to the plurality of formation specifications.

A method of making a MEMS actuator with a monolithic body of semiconductor material includes forming a supporting portion of semiconductor material, orientable with respect to first and second rotation axes, the first rotation axis being transverse with respect to the second rotation axis, and forming a first frame of semiconductor material. The method further includes forming first deformable elements, of semiconductor material, coupled to the first frame, and configured to control a rotation of the supporting portion about the first rotation axis. The method also includes forming a second frame of semiconductor material, and forming second deformable elements, of semiconductor material, coupled to the first frame and to the second frame, and configured to control a rotation of the supporting portion about the second rotation axis. The first and second deformable elements are formed to carry respective first and second piezoelectric actuation elements.

Aspects of the subject disclosure include a pressure-sensing device consisting of a housing including a membrane and one or more piezoresistive elements disposed on the membrane to sense a displacement due to a deflection of the membrane. A first set of electrodes is disposed over the membrane, and a second set of electrodes is disposed on a permeable port of the device at a distance from the membrane. The first and second sets of electrodes form an electrostatic actuator to exert a repulsive force onto the membrane to reduce the deflection of the membrane.

Microelectromechanical (MEMS) devices and associated methods are disclosed. Piezoelectric MEMS transducers (PMUTs) suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuit (IC), as well as PMUT arrays having high fill factor for fingerprint sensing, are described.

A mechanical structure comprising a stack including an active substrate and at least one actuator designed to generate vibrations at the active substrate, the stack comprises an elementary structure for amplifying the vibrations: positioned between the actuator and the active substrate, the structure designed to transmit and amplify the vibrations; and comprising at least one trench, located between the actuator and the active substrate. A method for manufacturing the structure comprising the use of a temporary substrate is provided.