Aspects of the present disclosure are directed to an apparatus including a circuit region and a fluidic region. In a particular example, the circuit region with logical circuits thereon, includes a thermal oxide layer on a silicon substrate, and a dielectric layer over the field oxide layer, the dielectric layer including a doped dielectric film. The microfluidic device further includes a fluidic region including fluid ports formed through a surface of the apparatus and including an un-doped dielectric film. The fluidic region includes an aperture in the dielectric layer, where the aperture is defined by a dielectric wall which forms part of the dielectric layer. A sealing film deposited over the dielectric wall may prevent the doped dielectric film from contacting fluid contained in the fluid port.

A MEMS chip assembly including: a support structure having a chip mounting surface; a MEMS chip mounted on the chip mounting surface, each MEMS chip having an active surface including one or more MEMS devices and a plurality of bond pads disposed alongside a connection edge of the MEMS chip; electrical connectors connected to the bond pads; and an encapsulant material covering the electrical connectors. The MEMS chip has encapsulant-retaining trenches defined in the active surface extending alongside the connection edge, each encapsulant-retaining trench being disposed between the bond pads and the MEMS devices.

An inkjet printhead includes: an elongate support having a printhead mounting surface; a plurality of butting printhead chips mounted on the printhead mounting surface, each printhead chip having an ink ejection surface including one or more nozzle rows; and a grout material disposed between butting edges of each butting pair of printhead chips. Each printhead chip has a grouting trench defined in the ink ejection surface, the grouting trench extending alongside at least one butting edge and the grouting trench being disposed between an endmost nozzle of each nozzle row and the butting edge.

A process for forming inkjet nozzle devices on a frontside surface of a wafer substrate. The process includes the steps of: (i) providing the wafer substrate having a plurality of etched holes defined in the frontside surface, each etched hole being filled with first and second polymers such that the second polymer is coplanar with the frontside surface; (ii) forming the inkjet nozzle devices on the frontside surface using MEMS fabrication steps; and (iii) removing the first and second polymers via oxidative ashing, wherein first and second polymers are different.

A process for forming inkjet nozzle devices on a frontside surface of a wafer substrate. The process includes the steps of: (i) providing the wafer substrate having a plurality of etched holes defined in the frontside surface, each etched hole being filled with first and second polymers such that the second polymer is coplanar with the frontside surface; (ii) forming the inkjet nozzle devices on the frontside surface using MEMS fabrication steps; and (iii) removing the first and second polymers via oxidative ashing, wherein first and second polymers are different.

A method for manufacturing a bonded substrate body in which an end portion of an adhesive is located at a position retreated in a direction to the inside of the bonded substrate body from an end surface of a bonding region of a first substrate and a second substrate includes forming a film on the end portion of the adhesive.

An integrated semiconductor heating assembly includes a semiconductor substrate, a chamber formed therein, and an exit port in fluid communication with the chamber, allowing fluid to exit the chamber in response to heating the chamber. The integrated heating assembly includes a first heating element adjacent the chamber, which can generate heat above a selected threshold and bias fluid in the chamber toward the exit port. A second heating element is positioned adjacent the exit port to generate heat above a selected threshold, facilitating movement of the fluid through the exit port away from the chamber. Addition of the second heating element reduces the amount of heat emitted per heating element and minimizes thickness of a heat absorption material toward an open end of the exit port. Since such material is expensive, this reduces the manufacturing cost and retail price of the assembly while improving efficiency and longevity thereof.

A photo-patterned fluorocarbon monolayer directly grafted to Si surface atoms provides anti-wetting performance at controlled locations, wherein the Si surface oxide is etched and reacted with fluorocarbon chains with a terminal CC double bond, resulting in SiC surface. As the direct SiC linkages are chemically robust, and much more resistant to decomposition than SiOC bonds, the resulting surface does not suffer from the shortcomings of current MEMS dispensers.

A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: depositing a layer of a thermoplastic first polymer onto the frontside surface and into each hole until the holes are overfilled with the first polymer; depositing a layer of a photoimageable second polymer different than the first polymer; selectively removing the second polymer from regions outside a periphery of the holes; exposing the wafer substrate to a controlled oxidative plasma so as to reveal the frontside surface of the wafer substrate; and planarizing the frontside surface to provide holes filled with a plug of the first polymer only, each plug having a respective upper surface coplanar with the frontside surface.

A method for creating at least one recess, in particular an aperture, in a transparent or transmissive material, includes: selectively modifying the material along a beam axis by electromagnetic radiation; and creating the at least one recess by one or more etching steps, using different etching rates in a modified region and in non-modified regions. The electromagnetic radiation produces modifications having different characteristics in the material along the beam axis such that the etching process in the material is heterogeneous and the etching rates differ from one another in regions modified with different characteristics under unchanged etching conditions.