A method of forming a space includes a step of tenting, on a substrate having a recessed portion, a dry film including a dry film material that is to be a top plate on the recessed portion. The step of tenting the dry film includes a press period and a release period and performs a press-release cycle of the press period and the release period a plurality of times, a pressed state in which the dry film is pressed against the substrate by using a pressing member is maintained during the press period, and a released state in which the pressed state is released is maintained during the release period.

A method for processing a silicon substrate is provided the method including repeatedly and alternately performing: an etching step of forming an etching pattern on the silicon substrate; and a protective film formation step of forming a protective film on a wall surface of the silicon substrate exposed in the etching step, wherein the method includes a protective film removal step of removing the protective film, which has been formed in the protective film formation step, by using a peeling solution, and wherein in the protective film formation step, the protective film is formed by using a mixed gas including 2,3,3,3-tetrafluoropropene and perfluorocyclobutane.

A substrate plate is provided for at least one MEMS device to be mounted thereon. The MEMS device has a certain footprint on the substrate plate, and the substrate plate has a pattern of electrically conductive leads to be connected to electric components of the MEMS device. The pattern forms contact pads within the footprint of the MEMS device and includes at least one lead structure that extends on the substrate plate outside of the footprint of the MEMS device and connects a number of the contact pads to an extra contact pad. The lead structure is a shunt bar that interconnects a plurality of contact pads of the MEMS device and is arranged to be removed by means of a dicing cut separating the substrate plate into a plurality of chip-sized units. At least a major part of the extra contact pad is formed within the footprint of one of the MEMS devices.

A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) depositing a layer of a photoimageable thermoplastic polymer onto the frontside surface and into each hole; (ii) reflowing the polymer; (iii) selectively removing the polymer from regions outside a periphery of each hole, the selective removing comprising exposure and development of the polymer; (iv) optionally repeating steps (i) to (iii) until each hole is overfilled with the polymer; and (v) planarizing the frontside surface to provide one or more holes filled with a plug of the polymer. Each plug has a respective upper surface coplanar with the frontside surface.

A MEMS device includes a drive region having a stacked structural body in which a first electrode layer, a first dielectric layer, and a second electrode layer are stacked in that order. The stacked structural body extends from the drive region to a non-drive region that is outer than the drive region and, in an extending direction of the stacked structural body, the first electrode layer and the first dielectric layer extend farther outward than the second electrode layer. A second dielectric layer covering an end of the second electrode layer in the extending direction is stacked on the second electrode layer in the non-drive region and the first dielectric layer that is formed outer in the extending direction than the second electrode layer. A third electrode layer electrically connected to the second electrode layer is stacked on the second dielectric layer and on the second electrode layer in a region outside the second dielectric layer. In the extending direction, the end of the second electrode layer is formed more to a drive region side than a second dielectric layer-side end of the third electrode layer.

We describe a method of layer-by-layer deposition of a plurality of layers of material onto the wall or walls of a channel of a microfluidic device, the method comprising: loading a tube with a series of segments of solution, a said segment of solution bearing a material to be deposited; coupling said tube to said microfluidic device; and injecting said segments of solution into said microfluidic device such that said segments of solution pass, in turn, through said channel depositing successive layers of material to perform said layer-by-layer deposition onto said wall or walls of said channel. Embodiments of the methods are particularly useful for automated surface modification of plastic, for example PDMS (Poly(dimethylsiloxane)), microchannels. We also describe methods and apparatus for forming double-emulsions.

A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) depositing a layer of a thermoplastic first polymer onto the frontside surface and into each hole; (ii) reflowing the first polymer; (iii) exposing the wafer substrate to a controlled oxidative plasma; (iv) optionally repeating steps (i) to (iii); (v) depositing a layer of a photoimageable second polymer; (vi) selectively removing the second polymer from regions outside a periphery of the holes using exposure and development; and (vii) planarizing the frontside surface to provide holes filled with a plug comprising the first and second polymers, which are different than each other. Each plug has a respective upper surface coplanar with the frontside surface.

An example provides a method including providing a substrate including an area having a plurality of pores and etching the area of the substrate to remove the plurality of pores to form a recess in the substrate. In some examples, the recess may form, at least in part, a device.

A wiring structure includes a connecting terminal array formed on a first substrate and a connected terminal array formed on a second substrate, which are electrically connected, wherein a dummy terminal that is not used for transmission and reception of an electrical signal is provided on at least one end of the connecting terminal array in a terminal arrangement direction, and an anisotropic conductive film containing a conductive particle which is disposed between the first substrate and the second substrate extends to the dummy terminal such that an end of the anisotropic conductive film is located on a surface of the dummy terminal.

A MEMS device includes a drive region having a stacked structural body in which a first electrode layer, a first dielectric layer, and a second electrode layer are stacked in that order. The stacked structural body extends from the drive region to a non-drive region that is outer than the drive region and, in an extending direction of the stacked structural body, the first electrode layer and the first dielectric layer extend farther outward than the second electrode layer. A second dielectric layer covering an end of the second electrode layer in the extending direction is stacked on the second electrode layer in the non-drive region and the first dielectric layer that is formed outer in the extending direction than the second electrode layer. A third electrode layer electrically connected to the second electrode layer is stacked on the second dielectric layer and on the second electrode layer in a region outside the second dielectric layer. In the extending direction, the end of the second electrode layer is formed more to a drive region side than a second dielectric layer-side end of the third electrode layer.