Patent classifications
B81B2203/0315
Pressure sensor and manufacturing method thereof
The present disclosure provides a pressure sensor, including a chamber and a film. The chamber includes a first wall with a first electrode and a second wall with a second electrode. The first wall faces the second wall, and the first electrode and the second electrode respectively include conductive or semiconductive material. The film lines a surface inside the chamber exclusive of the first electrode and the second electrode for blocking outgassing entering the chamber from the surface. A method of manufacturing the pressure sensor is also disclosed.
ROUGH MEMS SURFACE
A surface of a cavity of a MEMS device that is rough to reduce stiction. In some embodiments, the average roughness (Ra) of the surface is 5 nm or greater. In some embodiments, the rough surface is formed by forming one or more layers of a rough oxidizable material, then oxidizing the material to form an oxide layer with a rough surface. Another layer is formed over the oxide layer with the rough surface, wherein the roughness of the oxide layer is transferred to the another layer.
SEMICONDUCTOR STRUCTURES
The present application relates to structures for supporting mechanical, electrical and/or electromechanical components, devices and/or systems and to methods of fabricating such structures. The application describes a primary die comprising an aperture extending through the die. The aperture is suitable for receiving a secondary die. A secondary die may be provided within the aperture of the primary die.
Through silicon via including multi-material fill
An apparatus includes a substrate having at least one via disposed in the substrate, wherein the substrate includes a trench having a substantially trapezoidal cross-section, the trench extending through the substrate between a lower surface of the substrate and an upper surface of the substrate, wherein the top of the trench opens to a top opening, and the bottom of the trench opens to a bottom opening, the top opening being larger than the bottom opening. The apparatus can include a mouth surrounding the top opening and extending between the upper surface and the top opening, wherein a mouth opening in the upper surface is larger than the top opening of the trench, wherein the via includes a dielectric layer disposed on an inside surface of a trench. The apparatus includes and a disposed in the trench, with the dielectric layer sandwiched between the fill and the substrate.
MEMS microphone
The MEMS microphone includes a first circuit board; a second circuit board keeping a distance from the first circuit board; a frame located between the first circuit board and the second circuit board for forming a cavity cooperatively with the first circuit board and the second circuit board, the frame including a plated-through-hole; an ASIC chip located in the cavity; and an MEMS chip having a back cavity. The first circuit board is electrically connected with the second circuit board by the plated-through-hole. The frame includes a conductive layer and an insulating layer, and the conductive layer is located between an inner surface of the frame and the insulating layer.
MICROMECHANICAL DEVICE HAVING A DECOUPLED MICROMECHANICAL STRUCTURE
A micromechanical device having a substrate wafer, a functional layer situated above it which has a mobile micromechanical structure, and a cap situated on top thereof, having a first cavity, which is formed at least by the substrate wafer and the cap and which includes the micromechanical structure. The micromechanical device has a fixed part and a mobile part, which are movably connected to each other with at least one spring element, and the first cavity is situated in the mobile part. Also described is a method for producing the micromechanical device.
MEMS MICROPHONE AND METHOD OF MANUFACTURING THE SAME
A MEMS microphone includes a substrate having a cavity, a back plate disposed over the substrate and having a plurality of acoustic holes, a diaphragm disposed over the substrate to cover the cavity, the diaphragm being disposed under the back plate to be spaced apart from the back plate, including venting holes communicating with the cavity, and sensing an acoustic pressure to create a displacement, a first insulation layer interposed between the substrate and the diaphragm to support the diaphragm, and the first insulation layer including an opening formed at a position corresponding to the cavity to expose the diaphragm, a second insulating layer formed over the substrate to cover an upper face of the back plate and an insulating interlayer formed between the first insulation layer and the second insulation layer, and the insulation interlayer being located outside the diaphragm and supporting the second insulation layer to make the back plate be spaced from the diaphragm. Thus, a process of manufacturing the MEMS microphone may be simplified.
MEMS MICROPHONE AND METHOD OF MANUFACTURING THE SAME
A MEMS microphone includes a substrate having a cavity, a back plate disposed over the substrate and having a plurality of acoustic holes, a diaphragm disposed between the substrate and the back plate, and an anchor extending from a circumference of the diaphragm to be connected with an end portion of the diaphragm. The diaphragm is spaced apart from the substrate and the back plate to covers the cavity, and the diaphragm senses an acoustic pressure to generate a displacement. The anchor extends from a circumference of the diaphragm to be connected with an end portion of the diaphragm, and is connected with the substrate to support the diaphragm. Thus, the MEMS microphone can prevent a portion of an insulation layer located around the anchor from remaining and can prevent a buckling phenomenon of the diaphragm from occurring.
CMOS-MEMS-CMOS platform
A sensor chip combining a substrate comprising at least one CMOS circuit, a MEMS substrate and another substrate comprising at least one CMOS circuit in one package that is vertically stacked is disclosed. The package comprises a sensor chip further comprising a first substrate with a first surface and a second surface comprising at least one CMOS circuit; a MEMS substrate with a first surface and a second surface; and a second substrate comprising at least one CMOS circuit. Where the first surface of the first substrate is attached to a packaging substrate and the second surface of the first substrate is attached to the first surface of the MEMS substrate. The second surface of the MEMS substrate is attached to the second substrate. The first substrate, the MEMS substrate, the second substrate and the packaging substrate are mechanically attached and provided with electrical inter-connects.
CMOS-MEMS STRUCTURES WITH OUT-OF-PLANE MEMS SENSING GAP
A micro-electro-mechanical system sensor device is disclosed. The sensor device comprises a micro-electro-mechanical system (MEMS) layer, comprising: an actuator layer and a cover layer, wherein a portion of the actuator layer is coupled to the cover layer via a dielectric; and an out-of-plane sense element interposed between the actuator layer and the cover layer, wherein the MEMS device layer is connected to a complementary metal-oxide-semiconductor (CMOS) substrate layer via a spring and an anchor.