A method for processing a silicon substrate includes forming a structure having a bottom surface and a depth of 200 μm or more or 300 μm or more from a first surface of a silicon substrate, forming a protective film on an inner wall of the structure, and performing plasma etching so as to selectively remove the protective film disposed on the bottom surface of the structure with respect to the protective film disposed on the substantially perpendicular side wall of the structure, wherein the plasma etching is performed under the condition in which plasma with a sheath length at least 10 times the depth when the depth is 200 μm or more, or at least 5 time the depth when the depth is 300 μm or more, is generated and a mean free path of ions generated in the plasma is longer than the sheath length.

The invention provides a combo MEMS device. The combo MEMS device includes a substrate, a device layer, a cap, and at least two sensor units. The device layer is on the substrate. The cap is on the device layer. At least two sensor units which are adjacent to each other are both formed by the substrate, the device layer, and the cap. The first sensor unit includes a sealed space, and the second sensor unit includes a membrane and a semi-sealed space. The membrane is formed by reducing a thickness of a portion of the device layer. The semi-sealed space is formed between the substrate and the device layer or between the device layer and the cap, to receive an external pressure through an external pressure communication opening. The external pressure communication opening is formed between the substrate and the device layer, or between the device layer and the cap, or between the substrate and the cap.

A substrate assembly includes a first substrate, a second substrate and a bonding member. The first substrate includes a first surface-modified region having a functionality different from that of a remainder region of the first substrate. The second substrate includes a second surface-modified region connected to the first surface-modified region through a physical interaction and having a functionality different from that of a remainder region of the second substrate. The first and second substrates cooperatively define a space therebetween. The bonding member is disposed within said space to bond said first and second substrates together. A method for bonding substrates is also disclosed.

A through-glass via (TGV) formed in a glass substrate may comprise a metal plating layer formed in the TGV. The TGV may have a three-dimensional (3D) topology through the glass substrate and the metal plating layer conformally covering the 3D topology. The TGV may further comprise a barrier layer disposed over the metal plating layer, and a metallization layer disposed over the barrier layer. The metallization layer may be electrically coupled to the metal plating layer through the barrier layer. The barrier layer may comprise a metal-nitride film disposed on the metal plating layer that is electrically coupled to the metallization layer. The barrier layer may comprise a metal film disposed over the metal plating layer and over a portion of glass surrounding the TGV, and an electrically-insulating film disposed upon the metal film, the electrically-insulating film completely overlapping the metal plating layer and partially overlapping the metal film.

A system includes a first membrane, a second membrane and a third membrane spaced apart from one another, wherein the second membrane is between the first membrane and the third membrane, and the second membrane comprises a plurality of openings, a sealed low pressure chamber between the first membrane and the third membrane, and a plurality of electrodes in the sealed low pressure chamber.

The present disclosure describes techniques for altering the epoxy wettability of a surface of a MEMS device. Particularly applicable to flip-chip bonding arrangements in which a top surface of a MEMS device is adhered to a package substrate. A barrier region is provided on a top surface of the MEMs device, laterally outside a region which forms, or overlies, the backplate and/or the cavity in the transducer substrate. The barrier region comprises a plurality of discontinuities, e.g. dimples, which inhibit the flow of epoxy.

A device includes a first layer of an electrically insulating material and a second layer of a non-electrically insulating material (e.g., semiconductor or electrically conductive) extending on the first layer. The second layer is structured so as to define opposite, lateral walls of a microchannel, a bottom wall of which is defined by an exposed surface of the first layer. The second layer is further structured to form one or more electrical insulation barriers; each barrier includes a line of through holes, each surrounded by an oxidized region of the material of the second layer. The through holes alternate with oxidized portions of the oxidized region along the line. Each barrier extends, as a whole, laterally across the second layer up to one of the lateral walls and delimits two sections of the second layer on each side of the barrier and on a same side of the microchannel.

Provided is a micro-fluidic chip, including a first substrate and a second substrate opposite to each other. A liquid storage cavity is formed between the first substrate and the second substrate, and a liquid inlet hole penetrating through the first substrate in a thickness direction is formed in the first substrate. The first substrate includes a first electrode layer and a hydrophobic layer that are sequentially disposed in the thickness direction of the first substrate, and the first electrode layer is on a surface of the hydrophobic layer away from the second substrate. The second substrate includes an adjustment layer and a second electrode layer that are sequentially disposed in a thickness direction of the second substrate, and the second electrode layer is on a surface of the adjustment layer away from the first substrate. A micro-fluidic system and a control method of the micro-fluidic chip are also provided.

A micro electromechanical system (MEMS) includes a substrate, a semiconductor device and a protection wall. The substrate has a surface. The semiconductor device is disposed on the surface. The protection wall has a poly-silicon layer surrounding the semiconductor device and connecting to the surface.

A MEMS microphone includes a diaphragm having conductivity, first and second variable capacitors respectively including first and second fixed electrodes, a first voltage output section that outputs a first voltage changed according to a change in a capacitance of the first variable capacitor, and a second voltage output section that outputs a second voltage changed according to a change in a capacitance of the second variable capacitor. The first and second fixed electrodes face the diaphragm. The capacitances of the first and second variable capacitors are changed in accordance with a vibration of the diaphragm. A first bias voltage is applied to the first fixed electrode. A reference voltage is applied to the second fixed electrode. A second bias voltage is applied to the diaphragm. A difference between the second bias voltage and the reference voltage is half of a difference between the first bias voltage and the reference voltage.