B81B2207/012

Semiconductor device and method of manufacturing semiconductor device

In one example, an electronic device includes a semiconductor sensor device having a cavity extending partially inward from one surface to provide a diaphragm adjacent an opposite surface. A barrier is disposed adjacent to the one surface and extends across the cavity, the barrier has membrane with a barrier body and first barrier strands bounded by the barrier body to define first through-holes. The electronic device further comprises one or more of a protrusion pattern disposed adjacent to the barrier structure, which can include a plurality of protrusion portions separated by a plurality of recess portions; one or more conformal membrane layers disposed over the first barrier strands; or second barrier strands disposed on and at least partially overlapping the first barrier strands. The second barrier strands define second through-holes laterally offset from the first through-holes. Other examples and related methods are also disclosed herein.

INTEGRATED PIEZOELECTRIC MICROELECTROMECHANICAL ULTRASOUND TRANSDUCER (PMUT) ON INTEGRATED CIRCUIT (IC) FOR FINGERPRINT SENSING
20220172506 · 2022-06-02 ·

Microelectromechanical (MEMS) devices and associated methods are disclosed. Piezoelectric MEMS transducers (PMUTs) suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuit (IC), as well as PMUT arrays having high fill factor for fingerprint sensing, are described.

Semiconductor sensor and method of manufacturing the same

A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO.sub.2-patterned portion, and a second Pt-patterned portion on the second TiO.sub.2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO.sub.2 layer formed on the IMD layer, a first TiO.sub.2-patterned portion and a first Pt-patterned portion.

Semiconductor device and electronic apparatus

A semiconductor device includes a base substrate, a detection device provided on the base substrate and including a detector, a first connector electrically connecting the base substrate and the detection device, and a resin package provided on the base substrate and embedded with the detection device and the first connector. The resin package includes an exposure hole exposing the detector of the detection device to the outside, and a concave-convex portion.

MEMS package, MEMS microphone and method of manufacturing the MEMS package

A MEMS package has a MEMS chip, a package substrate which the MEMS chip is adhered, a chip cover which wraps the MEMS chip, and a pressure regulation film which is adhered to the front surface of the chip cover. The chip cover has a vent which is formed in a chip outside area, arranged outside than the MEMS chip, the pressure regulation film has a slit. The slit is arranged in the neighborhood of the vent and the vent is covered with the pressure regulation film.

HETEROGENOUS INTEGRATION OF COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR AND MEMS SENSORS
20220162062 · 2022-05-26 ·

A complementary metal oxide semiconductor (CMOS) device integrated with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device heterogeneously. For example, a CMOS wafer with CMOS devices and interconnections as well as partially processed MEMS modules is bonded with a MEMS wafer with MEMS structures, post CMOS compatibility issues are alleviated. Post integration process to complete the devices includes forming contacts for interconnecting the sensors to the CMOS components as well as encapsulating the devices with a cap wafer using wafer-level vacuum packaging.

Die stack arrangement comprising a die-attach-film tape and method for producing same

A device includes a base substrate with a sensor component arranged thereon; a spacer layer on the base substrate, wherein the spacer layer is structured in order to predefine a cavity region, in which the sensor component is arranged in an exposed fashion on the base substrate, and a DAF tape element (DAF=Die-Attach-Film) on a stack element, wherein the DAF tape element mechanically fixedly connects the stack element to the spacer layer arranged on the base substrate and to obtain the cavity region.

Semiconductor structures
11736866 · 2023-08-22 · ·

The present application relates to structures for supporting mechanical, electrical and/or electromechanical components, devices and/or systems and to methods of fabricating such structures. The application describes a primary die comprising an aperture extending through the die. The aperture is suitable for receiving a secondary die. A secondary die may be provided within the aperture of the primary die.

Integrated ultrasonic transducers

Described are transducer assemblies and imaging devices comprising: a microelectromechanical systems (MEMS) die including a plurality of piezoelectric elements; a complementary metal-oxide-semiconductor (CMOS) die electrically coupled to the MEMS die by a first plurality of bumps and including at least one circuit for controlling the plurality of piezoelectric elements; and a package secured to the CMOS die by an adhesive layer and electrically connected to the CMOS die.

MICROPHONE DEVICE WITH INGRESS PROTECTION

A microphone device includes a base and a microelectromechanical system (MEMS) transducer and an integrated circuit (IC) disposed on the base. The microphone device also includes a cover mounted on the base and covering the MEMS transducer and the IC. The MEMS transducer includes a diaphragm attached to a surface of the substrate and a back plate mounted on the substrate and in a spaced apart relationship with the diaphragm. The diaphragm is attached to the surface of the substrate along at least a portion of a periphery of the diaphragm. The diaphragm can include a silicon nitride insulating layer, and a conductive layer, that faces a conductive layer of the back plate. The MEMS transducer can include a peripheral support structure that is disposed between at least a portion of the diaphragm and the substrate. The diaphragm can include one or more pressure equalizing apertures.