Microelectromechanical systems (MEMS) packages and methods for forming the same are provided. The MEMS package includes a semiconductor substrate having a metallization layer over the semiconductor substrate. The MEMS package also includes a first planarization layer and an overlying second planarization layer over the metallization layer. The planarization structure has a first cavity therein exposing the metallization layer. The MEMS package also includes a MEMS device structure bonded to the second planarization layer. The MEMS device structure includes a moveable element over the first cavity. The MEMS package also includes a first stopper placed on the exposed metallization layer in the first cavity. The first stopper includes a patterned conductive layer and an underlying patterned insulating layer.

The application describes MEMS transducers having a patterned membrane electrode which incorporates a plurality of openings or voids. At least a portion of the peripheral edge of the opening is provided with a plurality of discontinuities e.g. projections and recesses which extend within the plane of the membrane electrode.

A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.

An integrated CMOS-MEMS device includes a first substrate having a CMOS device, a second substrate having a MEMS device, an insulator layer disposed between the first substrate and the second substrate, a dischargeable ground-contact, an electrical bypass structure, and a contrast stress layer. The first substrate includes a conductor that is conductively connecting to the CMOS devices. The electrical bypass structure has a conducting layer conductively connecting this conductor of the first substrate with the dischargeable ground-contact through a process-configurable electrical connection. The contrast stress layer is disposed between the insulator layer and the conducting layer of the electrical bypass structure.

A microelectromechanical sensors (MEMS) device includes a first substrate, a MEMS transducer package attached on the first substrate and including a MEMS transducer therein configured to output an electrical signal corresponding to movement of fluid, and a semiconductor device attached on the first substrate and configured to process the electrical signal provided from the MEMS transducer.

Various embodiments of the present disclosure are directed towards a method for forming an integrated chip including an epitaxial layer overlying a microelectromechanical systems (MEMS) substrate. The method includes bonding a MEMS substrate to a carrier substrate, the MEMS substrate includes monocrystalline silicon. An epitaxial layer is formed over the MEMS substrate, the epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts are formed over the epitaxial layer, the plurality of contacts respectively form ohmic contacts with the epitaxial layer.

An ultrasound transducer device includes an electrode, a membrane separated from the electrode by a cavity between the membrane and the electrode, a patterned membrane support layer that defines a size and shape of the cavity and that is disposed between the electrode and the membrane, and vias that electrically connect the electrode to a substrate. The vias are disposed in the ultrasound transducer device such that less than 50% of the vias overlap with a support surface of the patterned membrane support layer, in a plan view.

An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.

Micro-electro-mechanical system (MEMS) devices are disclosed, including a MEMS device comprising a semiconductor die including integrated circuitry, a structure mounted on the semiconductor die and covering at least a portion of the circuitry, the structure defining a space between the structure and the at least a portion of the circuitry, and a transducer including a membrane, the transducer located outside of the space.

The present invention disclosed a micro acoustic collector and CMOS microphone single chip. The micro acoustic collector comprising: a plurality of leaf-shaped structures annularly arranged with symmetry, each of the plurality of leaf-shaped structure having a suspended arm and a restrained arm, and the suspended arm of the plurality of leaf-shaped structures connected to a suspended fulcrum, and a plurality of through-vias formed in the suspended fulcrum and the plurality of leaf-shaped structures; a plurality of support pillars uniformly disposed under edges of the plurality of leaf-shaped structures corresponding to the restrained arms and the suspend arms; and a base metal layer formed under and insulated from the plurality of support pillars, and facing towards the inner-annular-supported acoustic collection film to form a hollow space.