Micromechanical device comprising: a semiconductor body; a movable structure configured to oscillate relative to the semiconductor body along an oscillation direction; and an elastic assembly with an elastic constant, coupled to the movable structure and to the semiconductor body and configured to deform along the oscillation direction to allow the oscillation of the movable structure as a function of an acceleration applied to the micromechanical device. The movable structure and the semiconductor body comprise a control structure for the capacitive control of the oscillation of the movable structure: when the control structure is electrically controlled in a first state the micromechanical device is in a first operating mode wherein a total elastic constant of the micromechanical device has a first value, and when it is electrically controlled in a second state the micromechanical device is in a second operating mode wherein the total elastic constant has a second value lower than, or equal to, the first value.

A photosensitive transistor includes a substrate and a first semiconductor layer, a first gate, a first electrode, a second electrode and a second semiconductor layer which are located on a side of the substrate. The first semiconductor layer includes a first doped region, a second doped region and a channel region, the second semiconductor layer is in direct contact with the channel region, and an area of the second semiconductor layer is less than an area of the first semiconductor layer. The photosensitive transistor includes a main region and opening regions, and the opening regions are located at a periphery of the main region. The first electrode and the second electrode are in the same layer and insulated from each other and both surround the main region. The second semiconductor layer includes a main body portion located in the main region and auxiliary portions located in the opening regions.

Preferably, the invention relates to a MEMS package having at least one layer for protecting a MEMS element, wherein the MEMS element has at least one MEMS interaction region on a substrate and a surface conformal coating of the MEMS element is applied with a dielectric layer. Particularly preferably, the invention relates to a MEMS transducer package in which a MEMS element, for example with a MEMS membrane and processor, preferably an integrated circuit, are present on a substrate. For protection, a surface conformal coating of a dielectric is preferably first applied to the MEMS element, for example by spray coating, mist coating, and/or vapor coating. Then, preferably, an electrically conductive layer is applied. Depending on the configuration, the layers may be removed in some regions above a MEMS interaction region of the MEMS element, for example for a sound port of a MEMS membrane.

A MEMS microphone includes a diaphragm having conductivity, first and second variable capacitors respectively including first and second fixed electrodes, a first voltage output section that outputs a first voltage changed according to a change in a capacitance of the first variable capacitor, and a second voltage output section that outputs a second voltage changed according to a change in a capacitance of the second variable capacitor. The first and second fixed electrodes face the diaphragm. The capacitances of the first and second variable capacitors are changed in accordance with a vibration of the diaphragm. A first bias voltage is applied to the first fixed electrode. A reference voltage is applied to the second fixed electrode. A second bias voltage is applied to the diaphragm. A difference between the second bias voltage and the reference voltage is half of a difference between the first bias voltage and the reference voltage.

A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surface that is physically exposed to a respective vertically-extending cavity is formed in each of the at least one vertically-extending trench. A matrix material layer is attached to the MEMS support structure. A movable element laterally confined within a matrix layer is formed by patterning the matrix material layer. The matrix layer is bonded to the cap structure. A sealed chamber containing the movable element is formed. Each vertically-extending outgassing material portion has a surface that is physically exposed to the sealed chamber, and outgases a gas to increase the pressure in the sealed chamber.

A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surface that is physically exposed to a respective vertically-extending cavity is formed in each of the at least one vertically-extending trench. A matrix material layer is attached to the MEMS support structure. A movable element laterally confined within a matrix layer is formed by patterning the matrix material layer. The matrix layer is bonded to the cap structure. A sealed chamber containing the movable element is formed. Each vertically-extending outgassing material portion has a surface that is physically exposed to the sealed chamber, and outgases a gas to increase the pressure in the sealed chamber.

In an embodiment a semiconductor transducer device includes a semiconductor body and a diaphragm having a first layer and a second layer, wherein a main extension plane of the diaphragm is arranged parallel to a surface of the semiconductor body, wherein the diaphragm is suspended at a distance from the semiconductor body in a direction perpendicular to the main extension plane of the diaphragm, wherein the second layer comprises titanium and/or titanium nitride, wherein the first layer comprises a material that is resistant to an etchant comprising fluorine or a fluorine compound, and wherein the second layer is arranged between the semiconductor body and the first layer.

An integrated CMOS-MEMS device includes a first substrate having a CMOS device, a second substrate having a MEMS device, an insulator layer disposed between the first substrate and the second substrate, a dischargeable ground-contact, an electrical bypass structure, and a contrast stress layer. The first substrate includes a conductor that is conductively connecting to the CMOS devices. The electrical bypass structure has a conducting layer conductively connecting this conductor of the first substrate with the dischargeable ground-contact through a process-configurable electrical connection. The contrast stress layer is disposed between the insulator layer and the conducting layer of the electrical bypass structure.

In described examples, a microelectromechanical system (MEMS) is located on a substrate. A silicon nitride (SiN) layer on a portion of the substrate. A mechanical structure has first and second ends. The first end is embedded in the SiN layer, and the second end is cantilevered from the SiN layer.

A NEMS device structure and a method for forming the same are provided. The NEMS device structure includes a first dielectric layer formed over a substrate, and a first conductive layer formed in the first dielectric layer. The NEMS device structure includes a second dielectric layer formed over the first dielectric layer, and a first supporting electrode a second supporting electrode and a beam structure formed in the second dielectric layer. The beam structure is formed between the first supporting electrode and the second supporting electrode, and the beam structure has a T-shaped structure. The NEMS device structure includes a first through hole formed between the first supporting electrode and the beam structure, and a second through hole formed between the second supporting electrode and the beam structure.