The present invention provides a sound producing device comprising: an air pulse generating element and a control unit. The air pulse generating element comprises an air chamber and an actuator. The control unit, configured to generate a driving voltage applied to the actuator of the air pulse generating element, such that the air pulse generating element generates a plurality of air pulses in response to the driving voltage. The plurality of air pulses are at a pulse rate, and the pulse rate of the plurality of air pulses is higher than a maximum audible frequency.

The present invention provides a sound producing device comprising: an air pulse generating element and a control unit. The air pulse generating element comprises an air chamber and an actuator. The control unit, configured to generate a driving voltage applied to the actuator of the air pulse generating element, such that the air pulse generating element generates a plurality of air pulses in response to the driving voltage. The plurality of air pulses are at a pulse rate, and the pulse rate of the plurality of air pulses is higher than a maximum audible frequency.

In described examples, a bondline structure is arranged along a periphery of a cavity. The bondline structure extends from a first substrate and is configured to bond with an interposer arranged on a second substrate. A diffusion barrier is arranged on the first substrate for contacting the interposer. The diffusion barrier is arranged to impede a contaminant against migrating from the bondline structure and entering the cavity.

A sensor module includes: a substrate including a first terminal and a second terminal; a first conductive bonding member having a first melting point and a first Young's modulus; a lead bonded to the first terminal by the first conductive bonding member; a second conductive bonding member having a second melting point lower than the first melting point and a second Young's modulus higher than the first Young's modulus; and an inertial sensor bonded to the second terminal by the second conductive bonding member.

A nanoelectronic system comprised of n microelectromechanical or nanoelectromechanical devices arranged on a connection support to electrically connect the n devices, each device with an interaction area, at least one mechanical anchor and a first terminal, a second terminal and a third terminal, the relative arrangement of the first, second and third terminals, the anchor area and the interaction area being identical or similar for the n sensors, the first terminal of each device being intended to recover a signal emitted by each representative device of the interaction area state. At least part of the devices are arranged in such a way that the geometric location of the first terminal of one of the adjacent devices is identical to the geometric location of the first terminal of said other adjacent device, the first terminals being coincident.

An integrated MEMS device comprises two substrates where the first and second substrates are coupled together and have two enclosures there between. One of the first and second substrates includes an outgassing source layer and an outgassing barrier layer to adjust pressure within the two enclosures. The method includes depositing and patterning an outgassing source layer and a first outgassing barrier layer on the substrate, resulting in two cross-sections. In one of the two cross-sections a top surface of the outgassing source layer is not covered by the outgassing barrier layer and in the other of the two cross-sections the outgassing source layer is encapsulated in the outgassing barrier layer. The method also includes depositing conformally a second outgassing barrier layer and etching the second outgassing barrier layer such that a spacer of the second outgassing barrier layer is left on sidewalls of the outgassing source layer.

A semiconductor structure may include a first device having first surface with a first bonding layer formed thereon and a second device having a first surface with a second bonding layer formed thereon. The first bonding layer may provide an electrically conductive path to at least one electrical device in the first device. The second bonding layer may provide an electrically conductive path to at least one electrical device in the second device. One of the first or the second devices may include MEMS electrical devices. The first and/or the second bonding layers may be formed of a getter material, which may provide absorption for outgassing.

A MEMS sensor. The MEMS sensor includes a deflectably situated functional layer, a conversion device for converting a deflection of the functional layer into an electrical signal, the conversion device including at least one electrical element, the at least one electrical element being at least partially electrically connected to a first area, and the first area being at least partially electrically connected to a second area, and the first and second areas and/or the first area and the at least one electrical element being electrically operable in a reverse direction and a forward direction, and a control unit, the control unit being designed to at least partially operate the at least one electrical element and the first area and/or the first area and the second area in the forward direction to provide thermal energy.

A sensor unit including a first semiconductor component and a second semiconductor component, the first semiconductor component including a first substrate and a sensor structure. The second semiconductor component includes a second substrate, the first and second semiconductor components being connected to each other with the aid of a wafer connection, the sensor unit having a decoupling structure, which is configured in such a way that the sensor structure is decoupled thermally and/or mechanically from the second semiconductor component.

An integrated MEMS device comprises two substrates where the first and second substrates are coupled together and have two enclosures there between. One of the first and second substrates includes an outgassing source layer and an outgassing barrier layer to adjust pressure within the two enclosures. The method includes depositing and patterning an outgassing source layer and a first outgassing barrier layer on the substrate, resulting in two cross-sections. In one of the two cross-sections a top surface of the outgassing source layer is not covered by the outgassing barrier layer and in the other of the two cross-sections the outgassing source layer is encapsulated in the outgassing barrier layer. The method also includes depositing conformally a second outgassing barrier layer and etching the second outgassing barrier layer such that a spacer of the second outgassing barrier layer is left on sidewalls of the outgassing source layer.