A sensor unit including a first semiconductor component and a second semiconductor component, the first semiconductor component including a first substrate and a sensor structure. The second semiconductor component includes a second substrate, the first and second semiconductor components being connected to each other with the aid of a wafer connection, the sensor unit having a decoupling structure, which is configured in such a way that the sensor structure is decoupled thermally and/or mechanically from the second semiconductor component.

An integrated MEMS device comprises two substrates where the first and second substrates are coupled together and have two enclosures there between. One of the first and second substrates includes an outgassing source layer and an outgassing barrier layer to adjust pressure within the two enclosures. The method includes depositing and patterning an outgassing source layer and a first outgassing barrier layer on the substrate, resulting in two cross-sections. In one of the two cross-sections a top surface of the outgassing source layer is not covered by the outgassing barrier layer and in the other of the two cross-sections the outgassing source layer is encapsulated in the outgassing barrier layer. The method also includes depositing conformally a second outgassing barrier layer and etching the second outgassing barrier layer such that a spacer of the second outgassing barrier layer is left on sidewalls of the outgassing source layer

A nanoelectronic system comprised of n microelectromechanical or nanoelectromechanical devices arranged on a connection support to electrically connect the n devices, each device with an interaction area, at least one mechanical anchor and a first terminal, a second terminal and a third terminal, the relative arrangement of the first, second and third terminals, the anchor area and the interaction area being identical or similar for the n sensors, the first terminal of each device being intended to recover a signal emitted by each representative device of the interaction area state. At least part of the devices are arranged in such a way that the geometric location of the first terminal of one of the adjacent devices is identical to the geometric location of the first terminal of said other adjacent device, the first terminals being coincident.

A micromechanical sensor device includes: a MEMS element; an ASIC element; a bonding structure provided between the MEMS element and the ASIC element; a layer assemblage having insulating layers and functional layers disposed alternatingly on one another; a sensing element movable in a sensing direction provided in at least one of the functional layers; a spacing element for providing a defined spacing between the MEMS element and the ASIC element being provided by way of a further functional layer; an abutment element having the spacing element and a first bonding layer being disposed on the sensing element; and an insulating layer being disposed on the ASIC element in an abutment region of the abutment element.

A semiconductor device comprises a substrate body with a surface, a conductor comprising a conductor material covering at least part of the surface, and a dielectric that is arranged on a part of the surface that is not covered by the conductor. Therein, the conductor is in contact with the substrate body, the conductor and the dielectric form a layer, and a bonding surface of the layer has surface topographies of less than 10 nm, with the bonding surface facing away from the substrate body. Moreover, the semiconductor device is free of a diffusion barrier.

A MEMS temperature sensor including a clamped-clamped microbeam having a drive electrode on one side configured for applying an AC current, and a sense electrode diagonally situated on the other side, a first anchor at one end and a second anchor at the other end of the microbeam. The first anchor receive a DC bias currents, which heats the microbeam to an operating temperature. The sense electrode is configured to capacitively sense oscillations in the microbeam due to an applied AC current. The MEMS temperature sensor has a three wafer construction in which the components are formed. The device is encapsulated by aluminum, and metal wires connect the first and second anchor, the drive electrode and the sense electrode to side electrode pads outside of the encapsulation. The MEMS temperature sensor has a linear operating region of 30-60 degrees Celsius.

In described examples, apparatus includes a first substrate that delimits a surface of a cavity and a bondline structure arranged along a periphery of the cavity, where the bondline structure extends from the first substrate, and the bondline structure configured to bond with an interposer arranged on a second substrate. The apparatus also includes a diffusion barrier on the first substrate, the diffusion barrier configured to contact the interposer and impede a contaminant against migrating from the bondline structure and entering the cavity.