A semiconductor pressure sensor assembly for measuring a pressure of an exhaust gas which contains corrosive components, comprising: a first cavity, a pressure sensor comprising first bondpads for electrical interconnection, a CMOS chip comprising second bondpads for electrical interconnection with the pressure sensor, an interconnection module having electrically conductive paths connected via bonding wires to the pressure sensor and to the CMOS chip; the interconnection module being a substrate with corrosion-resistant metal tracks, wherein the CMOS chip and part of the interconnection module are encapsulated by a plastic package.

A method for manufacturing a micromechanical environmental barrier chip includes providing a substrate having a first surface and an opposite second surface, depositing a material layer having a different etch characteristic than the substrate onto the first surface, creating a microstructured micromechanical environmental barrier structure on top of the material layer by applying a microstructuring process, applying an anisotropic etching process comprising at least one etching step for anisotropically etching from the second surface towards the first surface to create at least a cavity underneath the micromechanical environmental barrier structure, the cavity extending between the second surface and the material layer, and removing the material layer underneath the micromechanical environmental barrier structure to expose the environmental barrier structure.

An integrated device package is disclosed. The package can include a carrier, such as first integrated device die, and a second integrated device die stacked on the first integrated device die. The package can include a buffer layer which coats at least a portion of an exterior surface of the first integrated device die and which is disposed between the second integrated device die and the first integrated device die. The buffer layer can comprise a pattern to reduce transmission of stresses between the first integrated device die and the second integrated device die.

A micro electro mechanical system (MEMS) microphone includes a base including a port extending through the base, a shim assembly, an ingress protection element, and a MEMS device. The shim assembly is disposed on the base and over the port. The shim assembly has a plurality of walls that form a hollow interior cavity. The shim assembly also has a top surface and a bottom surface coupled to the base. The ingress protection element extends over and is coupled to the top of the shim assembly to enclose the cavity of the shim assembly. The shim assembly elevates the ingress protection element above the base and is effective to prevent the passage of contaminants there through. The MEMS device includes a diaphragm and a back plate and is disposed over the ingress protection element.

A method of forming a monolithic integrated PMUT and CMOS with a coplanar elastic, sealing, and passivation layer in a single step without bonding and the resulting device are provided. Embodiments include providing a CMOS wafer with a metal layer; forming a dielectric over the CMOS; forming a sacrificial structure in a portion of the dielectric; forming a bottom electrode; forming a piezoelectric layer over the CMOS; forming a top electrode over portions of the bottom electrode and piezoelectric layer; forming a via through the top electrode down to the bottom electrode and a second via down to the metal layer through the top electrode; forming a second metal layer over and along sidewalls of the first and second via; removing the sacrificial structure, an open cavity formed; and forming a dielectric layer over a portion of the CMOS, the open cavity sealed and an elastic layer and passivation formed.

A getter structure is provided, including a support; a first layer of getter material disposed on the support a second layer of getter material, the first layer of getter material being disposed between the support and the second layer of getter material; a first portion of material mechanically connecting a first face of the second layer of getter material to a first face of the first layer of getter material and forming at least one first space between the first faces of the first and second layers of getter material configured to allow a circulation of gas between the first faces of the first and second layers of getter material; and a first opening crossing through at least the second layer of getter material and emerging into the first space.

A top-port MEMS-microphone has an upper side and a bottom side. The microphone includes a MEMS chip with a monolithically connected protection element at the upper side, a backplate, and a membrane. The microphone also includes a sound inlet at the upper side and a mechanical or electrical connection at the bottom side.

A capacitive micro electrical mechanical system (MEMS) pressure sensor in one embodiment includes a base layer, a lower oxide layer supported by the base layer, a contact layer extending within the lower oxide layer, a membrane layer positioned generally above the lower oxide layer, the membrane layer including at least one protrusion extending downwardly through a portion of the lower oxide layer and contacting the contact layer, a nitride layer extending partially over the membrane layer, an upper oxide layer above the nitride layer, a backplate layer directly supported by the membrane layer and positioned above the upper oxide layer, a front-side etched portion exposing a first portion of the membrane layer through the upper oxide layer and the nitride layer, and a backside etched portion extending through the base layer, the backside etched portion at least partially aligned with the front-side etched portion.

A semiconductor structure includes a first substrate, a second substrate disposed over the first substrate, and including a first surface, a second surface opposite to the first surface, a via portion extending between the first surface and the second surface, a first through hole and a second through hole, and a device disposed over the second surface, and including a dielectric layer, a backplate at least partially exposed from the dielectric layer and a membrane at least partially exposed from the dielectric layer and disposed between the backplate and the first substrate, wherein the via portion is disposed within the second through hole, and the dielectric layer is bonded with the second substrate, and the device is electrically connected to the first substrate through the via portion.

A pressure sensing module includes a substrate and a sensing layer. The substrate has a first surface and a second surface opposite to each other. The substrate includes a stepped cavity and an opening. The stepped cavity extends from the first surface to the second surface, the opening extends from the second surface to the first surface, and the stepped cavity communicates with the opening. The sensing layer is disposed on the first surface of the substrate and covers the first surface of the substrate. The sensing layer includes at least one sensing element and a cross-shaped structure. The cross-shaped structure includes a central portion and a plurality of extending portions connecting the central portion. The central portion and the extending portions respectively include at least one hollow portion. An orthographic projection of the central portion of the cross-shaped structure on the substrate overlaps with the opening of the substrate.