Patent classifications
B81C1/00134
Complementary metal oxide semiconductor (CMOS) ultrasonic transducers and methods for forming the same
Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
INTEGRATION OF LAMINATE MEMS IN BBUL CORELESS PACKAGE
An apparatus including a die including a first side and an opposite second side including a device side with contact points and lateral sidewalls defining a thickness of the die; a build-up carrier coupled to the second side of the die, the build-up carrier including a plurality of alternating layers of conductive material and insulating material, wherein at least one of the layers of conductive material is coupled to one of the contact points of the die; and at least one device within the build-up carrier disposed in an area void of a layer of patterned conductive material. A method and an apparatus including a computing device including a package including a microprocessor are also disclosed.
Integration of laminate MEMS in BBUL coreless package
An apparatus including a die including a first side and an opposite second side including a device side with contact points and lateral sidewalls defining a thickness of the die; a build-up carrier coupled to the second side of the die, the build-up carrier including a plurality of alternating layers of conductive material and insulating material, wherein at least one of the layers of conductive material is coupled to one of the contact points of the die; and at least one device within the build-up carrier disposed in an area void of a layer of patterned conductive material. A method and an apparatus including a computing device including a package including a microprocessor are also disclosed.
MEMS device with stress relief structures
An encapsulated MEMS device includes stress-relief trenches in a region of its substrate that surrounds the movable micromachined structures and that is covered by a cap, such that the trenches are fluidly exposed to a cavity between the substrate and the cap. A method of fabricating a MEMS device includes fabricating stress-relief trenches through a substrate and fabricating movable micromachined structures, and capping the device prior art encapsulating the device.
Method of making acoustic devices with edge corrugation
A method of making an acoustic sensor (e.g., for use in a piezoelectric MEMS microphone) includes forming or providing a mold having one or more grooves in a top surface of the mold that extend in a direction of the length of the mold to a distal end of the mold. The method also includes forming or depositing a structure having one or more piezoelectric layers over the top surface of the mold to define a beam, the distal portion of the beam having a corrugated section including one or more grooves that correspond to the grooves of the mold. The method also includes forming a gap in the structure to define two beams separated by the gap, and releasing the structure from the mold to form one or more cantilever beams that increases an acoustic resistance of the gap between sensors.
Etch release residue removal using anhydrous solution
A method of making a microelectromechanical systems (MEMS) device includes etching away a sacrificial material layer to release a mechanical element of the MEMS device. The MEMS device is formed at least partially on the sacrificial material layer, and the etching leaves a residue in proximity to the mechanical element. The residue is exposed to an anhydrous solution to remove the residue. The residue may be an ammonium fluorosilicate-based residue, and the anhydrous solution may include acetic acid, isopropyl alcohol, acetone, or any anhydrous solution that can effectively dissolve the ammonium fluorosilicate-based residue.
Capacitive microelectronic and/or nanoelectronic device with increased compactness
A device with a mobile element extending along a given plane comprising at least one first, one second and one third layers extending in planes parallel to the given plane, with the first layer forming a support, the second layer comprising all or a portion of the mobile element and means for suspending the mobile element with respect to the support and the third layer comprising all or a portion of the capacitive means of which the capacitance varies according to the relative position of the mobile element with respect to the support, said capacitive means comprising at least one mobile electrode integral with one of the faces of the mobile element parallel to the given plane, and at least one fixed electrode with respect to the support, with the fixed and mobile electrodes being arranged at least partially in the same plane parallel to the given plane and at least partially above and/or below the mobile element.
Micromechanical sensor and method for manufacturing a micromechanical sensor
A micromechanical sensor is provided which includes a substrate having a main plane of extension and a rocker structure which is connected to the substrate via a torsion means. The torsion means extends primarily along a torsion axis, and the torsion axis is situated essentially in parallel to the main plane of extension of the substrate. The rocker structure is pivotable about the torsion axis from a neutral position into a deflected position, and the rocker structure has a mass distribution which is asymmetrical with respect to the torsion axis. The mass distribution is designed in such a way that a torsional motion of the rocker structure about the torsion axis is effected as a function of an inertial force which is oriented along a Z direction which is essentially perpendicular to the main plane of extension of the substrate.
REFRACTORY SEED METAL FOR ELECTROPLATED MEMS STRUCTURES
A system and method for a micro-electrical-mechanical system (MEMS) device including a substrate and a free-standing and suspended electroplated metal MEMS structure formed on the substrate. The free-standing and suspended electroplated metal MEMS structure includes a metal mechanical element mechanically coupled to the substrate and a seed layer mechanically coupled to and in electrical communication with the mechanical element, the seed layer comprising at least one of a refractory metal and a refractory metal alloy, wherein a thickness of the mechanical element is substantially greater than a thickness of the seed layer such that the mechanical and electrical properties of the free-standing and suspended electroplated metal MEMS structure are defined by the material properties of the mechanical element.
RELEASE HOLE PLUS CONTACT VIA FOR FINE PITCH ULTRASOUND TRANSDUCER INTEGRATION
Methods, systems, computer-readable media, and apparatuses for high density Micro-Electro-Mechanical Systems (MEMS) are presented. In some embodiments, a method for manufacturing a micro-electro-mechanical device on a substrate can comprise etching a release via through a layer of the device. The method can further comprise creating a cavity in the layer of the device using the release via as a conduit to access the desired location of the cavity, the cavity enabling movement of a transducer of the device. The method can then comprise depositing low impedance, electrically conductive material into the release via to form an electrically conductive path through the layer. Finally, the method can comprise electrically coupling the electrically conductive material to an electrode of the transducer.