A low-profile packaging structure for a microelectromechanical-system (MEMS) resonator system includes an electrical lead having internal and external electrical contact surfaces at respective first and second heights within a cross-sectional profile of the packaging structure and a die-mounting surface at an intermediate height between the first and second heights. A resonator-control chip is mounted to the die-mounting surface of the electrical lead such that at least a portion of the resonator-control chip is disposed between the first and second heights and wire-bonded to the internal electrical contact surface of the electrical lead. A MEMS resonator chip is mounted to the resonator-control chip in a stacked die configuration and the MEMS resonator chip, resonator-control chip and internal electrical contact and die-mounting surfaces of the electrical lead are enclosed within a package enclosure that exposes the external electrical contact surface of the electrical lead at an external surface of the packaging structure.

A MEMS inertial sensor, may include a movable sensitive element; and second substrate and a third substrate. The movable sensitive element may be formed by using a first substrate which may be formed of a monocrystalline semiconductor material. The first substrate may include a first surface and a second surface which are opposite to each other. One or more conductive layers may be formed on the first surface of the first substrate The second substrate may be coupled to a surface of the one or more conductive layer on the first substrate. The third substrate may be coupled to the second surface of the first substrate. The third substrate and the second substrate are respectively arranged on two opposite sides of the movable sensitive element.

Systems and methods for forming an electrostatic MEMS switch include forming a movable cantilevered beam on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. Electrical access to the electrostatic MEMS switch may be made by forming vias through the thickness of the second substrate. The cantilevered beam may be formed by etching the perimeter shape in the device layer of an SOI substrate. An additional void may be formed in the movable beam such that it bends about an additional hinge line as a result of the additional void. This may give the beam and switch advantageous kinematic characteristics.

A MEMS switch device including: a substrate layer; an insulating layer formed over the substrate layer; and a MEMS switch module having a plurality of contacts formed on the surface of the insulating layer, wherein the insulating layer includes a number of conductive pathways formed within the insulating layer, the conductive pathways being configured to interconnect selected contacts of the MEMS switch module.

A low-profile packaging structure for a microelectromechanical-system (MEMS) resonator system includes an electrical lead having internal and external electrical contact surfaces at respective first and second heights within a cross-sectional profile of the packaging structure and a die-mounting surface at an intermediate height between the first and second heights. A resonator-control chip is mounted to the die-mounting surface of the electrical lead such that at least a portion of the resonator-control chip is disposed between the first and second heights and wire-bonded to the internal electrical contact surface of the electrical lead. A MEMS resonator chip is mounted to the resonator-control chip in a stacked die configuration and the MEMS resonator chip, resonator-control chip and internal electrical contact and die-mounting surfaces of the electrical lead are enclosed within a package enclosure that exposes the external electrical contact surface of the electrical lead at an external surface of the packaging structure.

A power converter comprising a substrate, a control circuit disposed on the substrate; and a first circuit stack disposed on the substrate and coupled to the control circuit. The first circuit stack is in a stacked configuration. The first circuit stack comprises a first switch layer, a first interposer layer electrically coupled to the first switch layer, a second interposer layer electrically coupled to the first interposer layer, a first gate drive layer disposed between and electrically coupled to the first interposer layer and the second interposer layer, and a first inductor layer electrically coupled to the first gate drive layer.

In a microelectromechanical system (MEMS) device, a CMOS die is affixed to a die-mounting surface and wire-bonded to electrically conductive leads, and a MEMS die is stacked on and electrically coupled to the CMOS die in a flip-chip configuration. A package enclosure envelopes the MEMS die, CMOS die and wire bonds, and exposes respective regions of the electrically conductive leads.

The invention relates to a method for producing a pressure sensor, comprising the following steps: assembling a support substrate with a deformable membrane on which strain gauges have been deposited, wherein the deformable membrane comprises a thinned area at the center thereof, the support substrate is disposed on top of the deformable membrane, the support substrate comprises an upper surface and a lower surface in contact with the deformable membrane, and the support substrate also comprises lateral recesses arranged on top of the strain gauges and a central recess arranged on top of the thinned area of the membrane, so as to obtain a micromechanical structure; and, once the assembly has been obtained, depositing, in a single step, at least one conductive material on the upper surface of the support and in the lateral recesses of the support, said conductive material extending into the recesses in order to be in contact with the strain gauges so as to form electrical contacts in contact with the strain gauges.

A fabricated electromechanical device is disclosed herein. An exemplary device includes, a substrate, at least one layer of a high-transconductance material separated from the substrate by a dielectric medium, a first electrode in electrical contact with the at least one layer of a high-transconductance material and separated from the substrate by at least one first supporting member, a second electrode in electrical contact with the layer of a high-transconductance material and separated from the substrate by at least one second supporting member, where the first electrode is electrically separate from the second electrode, and a third electrode separated from the at least one layer of high-transconductance material by a dielectric medium and separated from each of the first electrode and the second electrode by a dielectric medium.

The present invention provides a capacitive acceleration sensor with a bending elastic beam and a preparation method. The sensor at least includes a first electrode structural layer, a middle structural layer and a second electrode structural layer; wherein the first electrode structural layer and the second electrode structural layer are provided with an electrode lead via-hole, respectively; the middle structural layer includes: a frame formed on a SOI silicon substrate with a double device layers, a seismic mass whose double sides are symmetrical and a bending elastic beam with one end connected to the frame and the other end connected to the seismic mass, wherein anti-overloading bumps and damping grooves are symmetrically provided on two sides of the seismic mass, and the bending elastic beams at different planes are staggered distributed and are not overlapped with each other in space. Since the bending times, the total length and the total width of the bending elastic beam can be prepared as needed, capacitive acceleration sensors with different sensitivities can be manufactured according to the present invention, and the manufacturing has high flexibility.