A method for manufacturing a gas detector by a micro-electrical-mechanical systems (MEMS) process. The method includes providing a MEMS wafer including a plurality of mutually adjacent units; forming a gas sensing material layer on the MEMS wafer; bonding a structure reinforcing layer and the MEMS wafer through anode bonding; providing an adhesive tape; performing a cutting process to form a gas detection unit; and adhering the gas detection unit on a substrate by the adhesive tape to form a gas detector. The structure reinforcing layer is capable of enhancing the strength of a device and preventing edge collapsing, and hence enhancing the overall yield rate and reducing costs.

A micro electro mechanical system (MEMS) includes a circuit substrate, a first MEMS structure disposed over the circuit substrate, and a second MEMS structure disposed over the first MEMS structure.

An integrated circuit (IC) device is provided. The IC device includes a first die including a first substrate and a second die including a second substrate. A plasma-reflecting layer is included on an upper surface of the first die. The plasma-reflecting layer is configured to reflect a plasma therefrom. The second substrate is bonded to the first die so as to form a cavity, wherein a lower surface of the cavity is lined by the plasma-reflecting layer. A dielectric protection layer is present on a lower surface of the second die and lines the upper surface of the cavity. A material of the second substrate has a first etch rate for the plasma and a material of the dielectric protection layer has a second etch rate for the plasma. The second etch rate is less than the first etch rate.

A multi-layer, stress-isolation platform configured for attaching a MEMS die to a base includes a first platform, a first layer of attachment material between the base and the first platform and attaching the first platform to the base, a MEMS die, and a second layer of attachment material between the first platform and the MEMS die and attaching the MEMS die to the first platform.

Structures, materials, and methods to control the spread of a solder material or other flowable conductive material in electronic and/or electromagnetic devices are provided.

The invention relates to a method for producing a multi-layer assembly. The method according to the invention comprises at least the following steps: providing a donor substrate (2) for removing a solid layer (4), in particular a wafer; producing modifications (12), in particular by means of laser beams (10), in the donor substrate (2) in order to specify a crack course; providing a carrier substrate (6) for holding the solid layer (4); bonding the carrier substrate (6) to the donor substrate (2) by means of a bonding layer (8), wherein the carrier substrate (6) is provided for increasing the mechanical strength of the solid layer (4) for the further processing, which solid layer is to be removed; arranging or producing a stress-producing layer (16) on the carrier substrate (6); thermally loading the stress-producing layer (16) in order to produce stresses in the donor substrate (2), wherein a crack is triggered by the stress production, which crack propagates along the specified crack course in order to remove the solid layer (4) from the donor substrate (2) such that the solid layer (4) is removed together with the bonded carrier substrate (6).

An embodiment method includes forming a first plurality of bond pads on a device substrate, depositing a spacer layer over and extending along sidewalls of the first plurality of bond pads, and etching the spacer layer to remove lateral portions of the spacer layer and form spacers on sidewalls of the first plurality of bond pads. The method further includes bonding a cap substrate including a second plurality of bond pads to the device substrate by bonding the first plurality of bond pads to the second plurality of bond pads.

A capacitive micromachined ultrasound transducer (cMUT) is provided. The cMUT has a first layer having a first electrode and a second layer having a second electrode opposing the first electrode to define a gap width therebetween. At least one of the first layer and the second layer includes a flexible layer having a contact area in contact to a support, such that the first electrode and the second electrode are movable relative to each other to cause a change of the gap width. The support has two substantially continuous shoulder sides each extending along with the flexible layer, each shoulder side making graduated contact with more contact area of the flexible layer as the flexible layer deforms toward the shoulder side, causing the flexible layer to have a dynamically changing spring strength.

A micromechanical sensor includes a base substrate, a cap substrate, and a MEMS substrate that is connected to each of the base and cap substrates by respective metallic bond connections and that includes a mechanical functional layer including movable MEMS elements, an electrode device for acquiring an indication of a movement of the MEMS elements and fashioned by layer deposition, and a sacrificial layer that is lower than the mechanical function layer, is fashioned by layer deposition, and is omitted in a region underneath the movable MEMS elements.

A semiconductor device includes a bottom substrate, a sacrificial layer on the bottom substrate and including a first opening exposing a first portion of the bottom substrate and a second opening exposing a second portion of the bottom substrate, a top substrate on the sacrificial layer and on the second opening forming a cavity, a first metal layer on the top substrate and/or on the exposed first portion of the bottom substrate, an adhesive layer on the first metal layer, and a second metal layer on the adhesive layer defining one or more pads. The pad includes a stack-layered structure of a first metal layer on the bottom substrate, an adhesive layer on the first metal layer, and a second metal layer on the adhesive layer. The thus formed structure reduces the pad contact resistance.